Dr. Manfred Ramsteiner

Growth of M-plane GaN(1|100) on γ-LiAlO₂(100)

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and R. Uecker and P. Reiche and K. H. Ploog }, title = { Growth of M-plane GaN(1|100) on <span class="math"><em>γ</em></span>-LiAlO₂(100) }, journal = { Journal of Crystal Growth }, volume = { 218 }, year = { 2000 }, pages = { 143 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - R. Uecker AU - P. Reiche AU - K. H. Ploog TI - Growth of M-plane GaN(1|100) on <span class="math"><em>γ</em></span>-LiAlO₂(100) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 218 SP - 143 PY - 2000/01/01

Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy

@article{ author = { H. J. Zhu and M. Ramsteiner and K. H. Ploog and R. Zhang and R. Tsui and K. Shiralagi and H. Goronkin }, title = { Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 62 }, year = { 2000 }, pages = { R16314 } }

TY - JOUR AU - H. J. Zhu AU - M. Ramsteiner AU - K. H. Ploog AU - R. Zhang AU - R. Tsui AU - K. Shiralagi AU - H. Goronkin TI - Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 62 SP - R16314 PY - 2000/01/01

Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures

@article{ author = { J. Fricke and R. Nötzel and U. Jahn and Z. Niu and H.-P. Schönherr and M. Ramsteiner and K. H. Ploog }, title = { Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures }, journal = { Journal of Applied Physics }, volume = { 86 }, year = { 1999 }, pages = { 2896 } }

TY - JOUR AU - J. Fricke AU - R. Nötzel AU - U. Jahn AU - Z. Niu AU - H.-P. Schönherr AU - M. Ramsteiner AU - K. H. Ploog TI - Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 86 SP - 2896 PY - 1999/01/01

Exciton transport into single quantum wires studied by time-resolved low-temperature near-field scanning optical microscopy

@article{ author = { Ch. Lienau and A. Richter and M. Süptitz and T. Elsaesser and R. Nötzel and M. Ramsteiner and K. H. Ploog }, title = { Exciton transport into single quantum wires studied by time-resolved low-temperature near-field scanning optical microscopy }, journal = { Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) }, volume = { }, year = { 1999 }, pages = { VII-B-21 (1435.pdf) } }

TY - JOUR AU - Ch. Lienau AU - A. Richter AU - M. Süptitz AU - T. Elsaesser AU - R. Nötzel AU - M. Ramsteiner AU - K. H. Ploog TI - Exciton transport into single quantum wires studied by time-resolved low-temperature near-field scanning optical microscopy JF - Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) JA - Proc. ICPS 24 J1 - - VL - SP - VII-B-21 (1435.pdf) PY - 1999/01/01

Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates

@article{ author = { W. Ma and R. Nötzel and M. Ramsteiner and U. Jahn and H.-P. Schönherr and H. Kostial and K. H. Ploog }, title = { Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 75 }, year = { 1999 }, pages = { 1836 } }

TY - JOUR AU - W. Ma AU - R. Nötzel AU - M. Ramsteiner AU - U. Jahn AU - H.-P. Schönherr AU - H. Kostial AU - K. H. Ploog TI - Selective electroluminescence from a single stack of sidewall quantum wires on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 75 SP - 1836 PY - 1999/01/01

Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates

@article{ author = { R. Nötzel and J. Fricke and Z. Niu and U. Jahn and K.-J. Friedland and M. Ramsteiner and H.-P. Schönherr and A. Trampert and K. H. Ploog }, title = { Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates }, journal = { Epitaxial Growth; edited by T. P. Pearsall, A.-L. Barabasi, F. Liu, and G. N. Maracas, Mater. Res. Soc. Proc. Vol. 570 (MRS, Pittsburgh, 1999) }, volume = { }, year = { 1999 }, pages = { 105 } }

TY - JOUR AU - R. Nötzel AU - J. Fricke AU - Z. Niu AU - U. Jahn AU - K.-J. Friedland AU - M. Ramsteiner AU - H.-P. Schönherr AU - A. Trampert AU - K. H. Ploog TI - Uniform quantum wire and quantum dot arrays by natural self-faceting on patterned substrates JF - Epitaxial Growth; edited by T. P. Pearsall, A.-L. Barabasi, F. Liu, and G. N. Maracas, Mater. Res. Soc. Proc. Vol. 570 (MRS, Pittsburgh, 1999) JA - Proc. MRS 570 J1 - VL - SP - 105 PY - 1999/01/01

Spatially resolved photoluminescence in quantum wells with surface acoustic waves

@article{ author = { P. V. Santos and M. Ramsteiner and R. Hey }, title = { Spatially resolved photoluminescence in quantum wells with surface acoustic waves }, journal = { Physica Status Solidi B }, volume = { 215 }, year = { 1999 }, pages = { 253 } }

TY - JOUR AU - P. V. Santos AU - M. Ramsteiner AU - R. Hey TI - Spatially resolved photoluminescence in quantum wells with surface acoustic waves JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 215 SP - 253 PY - 1999/01/01

Photoluminescence in GaAs-based quantum well structures with surface acoustic waves

@article{ author = { P. V. Santos and M. Ramsteiner and F. Jungnickel and R. Hey }, title = { Photoluminescence in GaAs-based quantum well structures with surface acoustic waves }, journal = { Physica Status Solidi A }, volume = { 173 }, year = { 1999 }, pages = { 269 } }

TY - JOUR AU - P. V. Santos AU - M. Ramsteiner AU - F. Jungnickel AU - R. Hey TI - Photoluminescence in GaAs-based quantum well structures with surface acoustic waves JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 173 SP - 269 PY - 1999/01/01

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001)

@article{ author = { P. Waltereit and O. Brandt and A. Trampert and M. Ramsteiner and M. Reiche and M. Qi and K. H. Ploog }, title = { Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001) }, journal = { Applied Physics Letters }, volume = { 74 }, year = { 1999 }, pages = { 3660 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - A. Trampert AU - M. Ramsteiner AU - M. Reiche AU - M. Qi AU - K. H. Ploog TI - Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H-SiC(0001) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 74 SP - 3660 PY - 1999/01/01

Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

@article{ author = { R. Hey and M. Ramsteiner and M. Wassermeier and K.-J. Friedland and B. Jenichen and L. Däweritz and K. H. Ploog }, title = { Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 2 }, year = { 1998 }, pages = { 867 } }

TY - JOUR AU - R. Hey AU - M. Ramsteiner AU - M. Wassermeier AU - K.-J. Friedland AU - B. Jenichen AU - L. Däweritz AU - K. H. Ploog TI - Influence of the growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 2 SP - 867 PY - 1998/01/01