Dr. Manfred Ramsteiner

Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures

@article{ author = { R. Nötzel and J. Fricke and U. Jahn and M. Ramsteiner and H.-P. Schönherr and K. H. Ploog }, title = { Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 183 } }

TY - JOUR AU - R. Nötzel AU - J. Fricke AU - U. Jahn AU - M. Ramsteiner AU - H.-P. Schönherr AU - K. H. Ploog TI - Engineering of growth selectivity on patterned GaAs (311)A substrates for novel lateral semiconductor nanostructures JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 183 PY - 2000/01/01

Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy

@article{ author = { M. Ramsteiner and R. Zhang and R. Tsui and K. Shiralagi and J. Tresek and H. Goronkin and K. H. Ploog }, title = { Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 243 } }

TY - JOUR AU - M. Ramsteiner AU - R. Zhang AU - R. Tsui AU - K. Shiralagi AU - J. Tresek AU - H. Goronkin AU - K. H. Ploog TI - Selective formation and alignment of InAs quantum dots over mesa stripes on GaAs(100) substrates studied by spatially resolved photoluminescence spectroscopy JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 243 PY - 2000/01/01

In-plane polarization anisotropy of the spontaneous emission of M-planeGaN/(Al,Ga)N quantum wells

@article{ author = { B. Rau and P. Waltereit and O. Brandt and M. Ramsteiner and K. H. Ploog and J. Puls and F. Henneberger }, title = { In-plane polarization anisotropy of the spontaneous emission of M-planeGaN/(Al,Ga)N quantum wells }, journal = { Applied Physics Letters }, volume = { 77 }, year = { 2000 }, pages = { 3343 } }

TY - JOUR AU - B. Rau AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - K. H. Ploog AU - J. Puls AU - F. Henneberger TI - In-plane polarization anisotropy of the spontaneous emission of M-planeGaN/(Al,Ga)N quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 77 SP - 3343 PY - 2000/01/01

Coexistence of electric fields and composition fluctuations in (In,Ga)N/GaN quantum wells grown on 6H-SiC(0001)

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and J. Ringling and A. Trampert and K. H. Ploog }, title = { Coexistence of electric fields and composition fluctuations in (In,Ga)N/GaN quantum wells grown on 6H-SiC(0001) }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 453 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - J. Ringling AU - A. Trampert AU - K. H. Ploog TI - Coexistence of electric fields and composition fluctuations in (In,Ga)N/GaN quantum wells grown on 6H-SiC(0001) JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 453 PY - 2000/01/01

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

@article{ author = { P. Waltereit and O. Brandt and A. Trampert and H.T. Grahn and J. Menniger and M. Ramsteiner and M. Reiche and K. H. Ploog }, title = { Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes }, journal = { Nature }, volume = { 406 }, year = { 2000 }, pages = { 865 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - A. Trampert AU - H.T. Grahn AU - J. Menniger AU - M. Ramsteiner AU - M. Reiche AU - K. H. Ploog TI - Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes JF - Nature JA - Nature J1 - Nat VL - 406 SP - 865 PY - 2000/01/01

Growth of M-plane GaN(1|100): A way to evade electrical polarization in nitrides

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and A. Trampert and H.T. Grahn and J. Menniger and M. Reiche and R. Uecker and P. Reiche and K. H. Ploog }, title = { Growth of M-plane GaN(1|100): A way to evade electrical polarization in nitrides }, journal = { Physica Status Solidi A }, volume = { 180 }, year = { 2000 }, pages = { 133 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - A. Trampert AU - H.T. Grahn AU - J. Menniger AU - M. Reiche AU - R. Uecker AU - P. Reiche AU - K. H. Ploog TI - Growth of M-plane GaN(1|100): A way to evade electrical polarization in nitrides JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 180 SP - 133 PY - 2000/01/01

Growth of M-plane GaN(1|100) on γ-LiAlO₂(100)

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and R. Uecker and P. Reiche and K. H. Ploog }, title = { Growth of M-plane GaN(1|100) on <span class="math"><em>γ</em></span>-LiAlO₂(100) }, journal = { Journal of Crystal Growth }, volume = { 218 }, year = { 2000 }, pages = { 143 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - R. Uecker AU - P. Reiche AU - K. H. Ploog TI - Growth of M-plane GaN(1|100) on <span class="math"><em>γ</em></span>-LiAlO₂(100) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 218 SP - 143 PY - 2000/01/01

Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy

@article{ author = { H. J. Zhu and M. Ramsteiner and K. H. Ploog and R. Zhang and R. Tsui and K. Shiralagi and H. Goronkin }, title = { Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 62 }, year = { 2000 }, pages = { R16314 } }

TY - JOUR AU - H. J. Zhu AU - M. Ramsteiner AU - K. H. Ploog AU - R. Zhang AU - R. Tsui AU - K. Shiralagi AU - H. Goronkin TI - Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 62 SP - R16314 PY - 2000/01/01

Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures

@article{ author = { J. Fricke and R. Nötzel and U. Jahn and Z. Niu and H.-P. Schönherr and M. Ramsteiner and K. H. Ploog }, title = { Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures }, journal = { Journal of Applied Physics }, volume = { 86 }, year = { 1999 }, pages = { 2896 } }

TY - JOUR AU - J. Fricke AU - R. Nötzel AU - U. Jahn AU - Z. Niu AU - H.-P. Schönherr AU - M. Ramsteiner AU - K. H. Ploog TI - Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 86 SP - 2896 PY - 1999/01/01

Exciton transport into single quantum wires studied by time-resolved low-temperature near-field scanning optical microscopy

@article{ author = { Ch. Lienau and A. Richter and M. Süptitz and T. Elsaesser and R. Nötzel and M. Ramsteiner and K. H. Ploog }, title = { Exciton transport into single quantum wires studied by time-resolved low-temperature near-field scanning optical microscopy }, journal = { Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) }, volume = { }, year = { 1999 }, pages = { VII-B-21 (1435.pdf) } }

TY - JOUR AU - Ch. Lienau AU - A. Richter AU - M. Süptitz AU - T. Elsaesser AU - R. Nötzel AU - M. Ramsteiner AU - K. H. Ploog TI - Exciton transport into single quantum wires studied by time-resolved low-temperature near-field scanning optical microscopy JF - Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) JA - Proc. ICPS 24 J1 - - VL - SP - VII-B-21 (1435.pdf) PY - 1999/01/01