Dr. Manfred Ramsteiner

Patterned high-index substrates as templates for novel quantum-wire and dot arrays: Growth and potential applications

@article{ author = { R. Nötzel and M. Ramsteiner and Z. Niu and L. Däweritz and K. H. Ploog }, title = { Patterned high-index substrates as templates for novel quantum-wire and dot arrays: Growth and potential applications }, journal = { Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. }, volume = { 156 }, year = { 1998 }, pages = { 65 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - Z. Niu AU - L. Däweritz AU - K. H. Ploog TI - Patterned high-index substrates as templates for novel quantum-wire and dot arrays: Growth and potential applications JF - Proceedings of the IEEE 24th International Symposium on Compound Semiconductors; edited by M. Melloch and M. A. Reed, IOP Conf. Ser. JA - Proc. ISCS 24 J1 - - VL - 156 SP - 65 PY - 1998/01/01

Atomic-hydrogen-assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays

@article{ author = { R. Nötzel and M. Ramsteiner and Z. C. Niu and A. Trampert and L. Däweritz and K. H. Ploog }, title = { Atomic-hydrogen-assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays }, journal = { Journal of Electronic Materials }, volume = { 27 }, year = { 1998 }, pages = { 36 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - Z. C. Niu AU - A. Trampert AU - L. Däweritz AU - K. H. Ploog TI - Atomic-hydrogen-assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays JF - Journal of Electronic Materials JA - J. Electron. Mater. J1 - JEM VL - 27 SP - 36 PY - 1998/01/01

Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy

@article{ author = { M. Ramsteiner and O. Brandt and K. H. Ploog }, title = { Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { 1118 } }

TY - JOUR AU - M. Ramsteiner AU - O. Brandt AU - K. H. Ploog TI - Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - 1118 PY - 1998/01/01

Intrinsic point defects in GaN induced by ion implantation

@article{ author = { M. Ramsteiner and H. Kostial and Z. Xiao and K. H. Ploog and E. Nebauer and J. Würfl and H. Tews and H. Riechert }, title = { Intrinsic point defects in GaN induced by ion implantation }, journal = { Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) }, volume = { }, year = { 1998 }, pages = { 570 } }

TY - JOUR AU - M. Ramsteiner AU - H. Kostial AU - Z. Xiao AU - K. H. Ploog AU - E. Nebauer AU - J. Würfl AU - H. Tews AU - H. Riechert TI - Intrinsic point defects in GaN induced by ion implantation JF - Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) JA - Proc. ISBLLED 1998 J1 - - VL - SP - 570 PY - 1998/01/01

Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy

@article{ author = { A. Richter and M. Süptitz and D. Heinrich and C. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy }, journal = { Applied Physics Letters }, volume = { 73 }, year = { 1998 }, pages = { 2176 } }

TY - JOUR AU - A. Richter AU - M. Süptitz AU - D. Heinrich AU - C. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 73 SP - 2176 PY - 1998/01/01

Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy

@article{ author = { A. Richter and M. Süptitz and C. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy }, journal = { Ultramicroscopy }, volume = { 71 }, year = { 1998 }, pages = { 205 } }

TY - JOUR AU - A. Richter AU - M. Süptitz AU - C. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Carrier trapping into single GaAs quantum wires studied by variable temperature near-field spectroscopy JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 71 SP - 205 PY - 1998/01/01

Spatially-resolved photoluminescence in GaAs surface acoustic wave structures

@article{ author = { P. V. Santos and M. Ramsteiner and F. Jungnickel }, title = { Spatially-resolved photoluminescence in GaAs surface acoustic wave structures }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 2099 } }

TY - JOUR AU - P. V. Santos AU - M. Ramsteiner AU - F. Jungnickel TI - Spatially-resolved photoluminescence in GaAs surface acoustic wave structures JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 2099 PY - 1998/01/01

Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells

@article{ author = { R. Hey and I. Gorbunova and M. Ramsteiner and M. Wassermeier and L. Däweritz and K. H. Ploog }, title = { Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells }, journal = { Journal of Crystal Growth }, volume = { 175/176 }, year = { 1997 }, pages = { 1167 } }

TY - JOUR AU - R. Hey AU - I. Gorbunova AU - M. Ramsteiner AU - M. Wassermeier AU - L. Däweritz AU - K. H. Ploog TI - Growth-mode-induced surface morphology and its relation to optical properties of GaAs single quantum wells JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 175/176 SP - 1167 PY - 1997/01/01

Random potential fluctuations in thin quantum wells probed by localized excitons

@article{ author = { U. Jahn and M. Ramsteiner and R. Hey and H.T. Grahn }, title = { Random potential fluctuations in thin quantum wells probed by localized excitons }, journal = { Physica Status Solidi A }, volume = { 164 }, year = { 1997 }, pages = { 517 } }

TY - JOUR AU - U. Jahn AU - M. Ramsteiner AU - R. Hey AU - H.T. Grahn TI - Random potential fluctuations in thin quantum wells probed by localized excitons JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 164 SP - 517 PY - 1997/01/01

Effective exciton mobility edge in narrow quantum wells

@article{ author = { U. Jahn and M. Ramsteiner and R. Hey and H.T. Grahn and E. Runge and R. Zimmermann }, title = { Effective exciton mobility edge in narrow quantum wells }, journal = { Physical Review B: Solid State }, volume = { 56 }, year = { 1997 }, pages = { R4387 } }

TY - JOUR AU - U. Jahn AU - M. Ramsteiner AU - R. Hey AU - H.T. Grahn AU - E. Runge AU - R. Zimmermann TI - Effective exciton mobility edge in narrow quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 56 SP - R4387 PY - 1997/01/01