Dr. Manfred Ramsteiner

Response to “Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’ ” [Appl. Phys. Lett. 70, 909 (1997)]

@article{ author = { M. Ramsteiner and J. Menniger and O. Brandt and H. Yang and K. H. Ploog }, title = { Response to “Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’ ” [Appl. Phys. Lett. 70, 909 (1997)] }, journal = { Applied Physics Letters }, volume = { 70 }, year = { 1997 }, pages = { 910 } }

TY - JOUR AU - M. Ramsteiner AU - J. Menniger AU - O. Brandt AU - H. Yang AU - K. H. Ploog TI - Response to “Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’ ” [Appl. Phys. Lett. 70, 909 (1997)] JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 70 SP - 910 PY - 1997/01/01

Near-field optical spectroscopy of carrier exchange between quantum wells and single GaAs quantum wires

@article{ author = { A. Richter and G. Behme and M. Süptitz and Ch. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Near-field optical spectroscopy of carrier exchange between quantum wells and single GaAs quantum wires }, journal = { Physica Status Solidi B }, volume = { 204 }, year = { 1997 }, pages = { 247 } }

TY - JOUR AU - A. Richter AU - G. Behme AU - M. Süptitz AU - Ch. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Near-field optical spectroscopy of carrier exchange between quantum wells and single GaAs quantum wires JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 204 SP - 247 PY - 1997/01/01

Real-space transfer and trapping of carriers into single GaAs quantum wires studied by near-field optical spectroscopy

@article{ author = { A. Richter and G. Behme and M. Süptitz and Ch. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Real-space transfer and trapping of carriers into single GaAs quantum wires studied by near-field optical spectroscopy }, journal = { Physical Review Letters }, volume = { 79 }, year = { 1997 }, pages = { 2145 } }

TY - JOUR AU - A. Richter AU - G. Behme AU - M. Süptitz AU - Ch. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Real-space transfer and trapping of carriers into single GaAs quantum wires studied by near-field optical spectroscopy JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 79 SP - 2145 PY - 1997/01/01

Near-field optical spectroscopy of single GaAs quantum wires

@article{ author = { A. Richter and M. Süptitz and C. Lienau and T. Elsaesser and M. Ramsteiner and R. Nötzel and K. H. Ploog }, title = { Near-field optical spectroscopy of single GaAs quantum wires }, journal = { Surface and Interface Analysis }, volume = { 25 }, year = { 1997 }, pages = { 583 } }

TY - JOUR AU - A. Richter AU - M. Süptitz AU - C. Lienau AU - T. Elsaesser AU - M. Ramsteiner AU - R. Nötzel AU - K. H. Ploog TI - Near-field optical spectroscopy of single GaAs quantum wires JF - Surface and Interface Analysis JA - Surf. Interface Anal. J1 - SIA VL - 25 SP - 583 PY - 1997/01/01

Two-magnon Raman scattering in KNiF₃. A comparison of experiment with Monte Carlo calculations in the ordered and disordered regions

@article{ author = { P. Schilbe and M. Ramsteiner and K. H. Rieder }, title = { Two-magnon Raman scattering in KNiF₃. A comparison of experiment with Monte Carlo calculations in the ordered and disordered regions }, journal = { Journal of Physics: Condensed Matter }, volume = { 9 }, year = { 1997 }, pages = { 4979 } }

TY - JOUR AU - P. Schilbe AU - M. Ramsteiner AU - K. H. Rieder TI - Two-magnon Raman scattering in KNiF₃. A comparison of experiment with Monte Carlo calculations in the ordered and disordered regions JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 9 SP - 4979 PY - 1997/01/01

Cubic phase GaN: correlation between growth kinetics and material quality

@article{ author = { O. Brandt and H. Yang and M. Ramsteiner and J. Menniger and K. H. Ploog }, title = { Cubic phase GaN: correlation between growth kinetics and material quality }, journal = { Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. }, volume = { 145 }, year = { 1996 }, pages = { 33 } }

TY - JOUR AU - O. Brandt AU - H. Yang AU - M. Ramsteiner AU - J. Menniger AU - K. H. Ploog TI - Cubic phase GaN: correlation between growth kinetics and material quality JF - Proceedings of the 22nd International Symposium on Compound Semiconductors; edited by J.-C. Woo and Y.S. Park, IOP Conf. Ser. JA - Proc. ISCS 22 J1 - - VL - 145 SP - 33 PY - 1996/01/01

Tailoring of Si doping-layers in GaAs during molecular beam epitaxy

@article{ author = { L. Däweritz and H. Kostial and M. Ramsteiner and R. Klann and P. Schützendübe and K. Stahrenberg and J. Behrend and R. Hey and M. Maier and K. Ploog }, title = { Tailoring of Si doping-layers in GaAs during molecular beam epitaxy }, journal = { Physica Status Solidi B }, volume = { 194 }, year = { 1996 }, pages = { 127 } }

TY - JOUR AU - L. Däweritz AU - H. Kostial AU - M. Ramsteiner AU - R. Klann AU - P. Schützendübe AU - K. Stahrenberg AU - J. Behrend AU - R. Hey AU - M. Maier AU - K. Ploog TI - Tailoring of Si doping-layers in GaAs during molecular beam epitaxy JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 194 SP - 127 PY - 1996/01/01

Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells

@article{ author = { U. Jahn and S. H. Kwok and M. Ramsteiner and R. Hey and H.T. Grahn and E. Runge }, title = { Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells }, journal = { Physical Review B: Solid State }, volume = { 54 }, year = { 1996 }, pages = { 2733 } }

TY - JOUR AU - U. Jahn AU - S. H. Kwok AU - M. Ramsteiner AU - R. Hey AU - H.T. Grahn AU - E. Runge TI - Exciton localization, photoluminescence spectra, and interface roughness in thin quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 54 SP - 2733 PY - 1996/01/01

Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices

@article{ author = { S. H. Kwok and M. Ramsteiner and D. Bertram and M. Asche and H.T. Grahn and K. Ploog }, title = { Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 53 }, year = { 1996 }, pages = { R7634 } }

TY - JOUR AU - S. H. Kwok AU - M. Ramsteiner AU - D. Bertram AU - M. Asche AU - H.T. Grahn AU - K. Ploog TI - Non-equilibrium optical phonon population by sequential resonant tunneling in GaAs-AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 53 SP - R7634 PY - 1996/01/01

Selectivity of growth on patterned GaAs (311)A substrates

@article{ author = { R. Nötzel and J. Menniger and M. Ramsteiner and A. Ruiz and H.-P. Schönherr and K. H. Ploog }, title = { Selectivity of growth on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 1132 } }

TY - JOUR AU - R. Nötzel AU - J. Menniger AU - M. Ramsteiner AU - A. Ruiz AU - H.-P. Schönherr AU - K. H. Ploog TI - Selectivity of growth on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 1132 PY - 1996/01/01