Dr. Manfred Ramsteiner

Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and J. Herfort }, title = { Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S }, journal = { Journal of Alloys and Compounds }, volume = { 858 }, year = { 2021 }, pages = { 157709 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - J. Herfort TI - Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 858 SP - 157709 PY - 2021/01/28

SnO/beta-Ga2O3 vertical pn heterojunction diodes

@article{ author = { M. Budde and D. Splith and P. Mazzolini and A. Tahraoui and J. Feldl and M. Ramsteiner and H. von Wenckstern and M. Grundmann and O. Bierwagen }, title = { SnO/beta-Ga2O3 vertical pn heterojunction diodes }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 252106 } }

TY - JOUR AU - M. Budde AU - D. Splith AU - P. Mazzolini AU - A. Tahraoui AU - J. Feldl AU - M. Ramsteiner AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen TI - SnO/beta-Ga2O3 vertical pn heterojunction diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 252106 PY - 2020/12/22

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

@article{ author = { M. Budde and P. Mazzolini and J. Feldl and C. Golz and T. Nagata and S. Ueda and G. Hoffmann and F. Hatami and W. T. Masselink and M. Ramsteiner and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 124602 } }

TY - JOUR AU - M. Budde AU - P. Mazzolini AU - J. Feldl AU - C. Golz AU - T. Nagata AU - S. Ueda AU - G. Hoffmann AU - F. Hatami AU - W. T. Masselink AU - M. Ramsteiner AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 124602 PY - 2020/12/16

The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films

@article{ author = { M. Karim and J. M. J. Lopes and M. Ramsteiner }, title = { The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films }, journal = { Journal of Raman Spectroscopy }, volume = { 51 }, year = { 2020 }, pages = { 2468 } }

TY - JOUR AU - M. Karim AU - J. M. J. Lopes AU - M. Ramsteiner TI - The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films JF - Journal of Raman Spectroscopy JA - J. Raman Spectrosc. J1 - VL - 51 SP - 2468 PY - 2020/10/26

Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices

@article{ author = { D. Czubak and S. Gaucher and L. Oppermann and J. Herfort and K. Zollner and J. Fabian and H. T. Grahn and M. Ramsteiner }, title = { Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 104415 } }

TY - JOUR AU - D. Czubak AU - S. Gaucher AU - L. Oppermann AU - J. Herfort AU - K. Zollner AU - J. Fabian AU - H. T. Grahn AU - M. Ramsteiner TI - Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 104415 PY - 2020/10/26

Raman scattering in heavily donor doped beta-Ga2O3

@article{ author = { A. Fiedler and M. Ramsteiner and Z. Galazka and K. Irmscher }, title = { Raman scattering in heavily donor doped beta-Ga2O3 }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 152107 } }

TY - JOUR AU - A. Fiedler AU - M. Ramsteiner AU - Z. Galazka AU - K. Irmscher TI - Raman scattering in heavily donor doped beta-Ga2O3 JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 152107 PY - 2020/10/14

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3

@article{ author = { V. Bragaglia and M. Ramsteiner and D. Schick and E. Boschker and R. Mitzner and R. Calarco and K. Holldack }, title = { Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 }, journal = { Scientific Reports }, volume = { 10 }, year = { 2020 }, pages = { 12962 } }

TY - JOUR AU - V. Bragaglia AU - M. Ramsteiner AU - D. Schick AU - E. Boschker AU - R. Mitzner AU - R. Calarco AU - K. Holldack TI - Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 10 SP - 12962 PY - 2020/07/31

Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy

@article{ author = { J. Feldl and M. Budde and C. Tschammer and O. Bierwagen and M. Ramsteiner }, title = { Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 235105 } }

TY - JOUR AU - J. Feldl AU - M. Budde AU - C. Tschammer AU - O. Bierwagen AU - M. Ramsteiner TI - Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 235105 PY - 2020/06/17

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

@article{ author = { D. Ruhstorfer and S. Mejia and M. Ramsteiner and M. Döblinger and H. Riedl and J. J. Finley and G. Koblmüller }, title = { Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 116 }, year = { 2020 }, pages = { 052101 } }

TY - JOUR AU - D. Ruhstorfer AU - S. Mejia AU - M. Ramsteiner AU - M. Döblinger AU - H. Riedl AU - J. J. Finley AU - G. Koblmüller TI - Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 116 SP - 052101 PY - 2020/02/04