Dr. Manfred Ramsteiner

Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices

@article{ author = { D. Czubak and S. Gaucher and L. Oppermann and J. Herfort and K. Zollner and J. Fabian and H. T. Grahn and M. Ramsteiner }, title = { Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 104415 } }

TY - JOUR AU - D. Czubak AU - S. Gaucher AU - L. Oppermann AU - J. Herfort AU - K. Zollner AU - J. Fabian AU - H. T. Grahn AU - M. Ramsteiner TI - Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 104415 PY - 2020/10/26

Raman scattering in heavily donor doped beta-Ga2O3

@article{ author = { A. Fiedler and M. Ramsteiner and Z. Galazka and K. Irmscher }, title = { Raman scattering in heavily donor doped beta-Ga2O3 }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 152107 } }

TY - JOUR AU - A. Fiedler AU - M. Ramsteiner AU - Z. Galazka AU - K. Irmscher TI - Raman scattering in heavily donor doped beta-Ga2O3 JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 152107 PY - 2020/10/14

Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3

@article{ author = { V. Bragaglia and M. Ramsteiner and D. Schick and E. Boschker and R. Mitzner and R. Calarco and K. Holldack }, title = { Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 }, journal = { Scientific Reports }, volume = { 10 }, year = { 2020 }, pages = { 12962 } }

TY - JOUR AU - V. Bragaglia AU - M. Ramsteiner AU - D. Schick AU - E. Boschker AU - R. Mitzner AU - R. Calarco AU - K. Holldack TI - Phonon anharmonicities and ultrafast dynamics in epitaxial Sb2Te3 JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 10 SP - 12962 PY - 2020/07/31

Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy

@article{ author = { J. Feldl and M. Budde and C. Tschammer and O. Bierwagen and M. Ramsteiner }, title = { Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 235105 } }

TY - JOUR AU - J. Feldl AU - M. Budde AU - C. Tschammer AU - O. Bierwagen AU - M. Ramsteiner TI - Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 235105 PY - 2020/06/17

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy

@article{ author = { D. Ruhstorfer and S. Mejia and M. Ramsteiner and M. Döblinger and H. Riedl and J. J. Finley and G. Koblmüller }, title = { Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 116 }, year = { 2020 }, pages = { 052101 } }

TY - JOUR AU - D. Ruhstorfer AU - S. Mejia AU - M. Ramsteiner AU - M. Döblinger AU - H. Riedl AU - J. J. Finley AU - G. Koblmüller TI - Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 116 SP - 052101 PY - 2020/02/04

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and A. Trampert }, title = { Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys }, journal = { Journal of Alloys and Compounds }, volume = { 824 }, year = { 2020 }, pages = { 153880 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - A. Trampert TI - Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 824 SP - 153880 PY - 2020/01/24

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

@article{ author = { M. Budde and T. Remmele and C. Tschammer and J. Feldl and P. Franz and J. Lähnemann and Z. Cheng and M. Hanke and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 015306 } }

TY - JOUR AU - M. Budde AU - T. Remmele AU - C. Tschammer AU - J. Feldl AU - P. Franz AU - J. Lähnemann AU - Z. Cheng AU - M. Hanke AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 015306 PY - 2020/01/06

Signatures of free carriers in Raman spectra of cubic In2O3

@article{ author = { M. Ramsteiner and J. Feldl and Z. Galazka }, title = { Signatures of free carriers in Raman spectra of cubic In2O3 }, journal = { Semiconductor Science and Technology }, volume = { 35 }, year = { 2019 }, pages = { 015017 } }

TY - JOUR AU - M. Ramsteiner AU - J. Feldl AU - Z. Galazka TI - Signatures of free carriers in Raman spectra of cubic In2O3 JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 35 SP - 015017 PY - 2019/12/02

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15