Dr. Yukihiko Takagaki

Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy

@article{ author = { Y. Takagaki and B. Jenichen }, title = { Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 27 }, year = { 2012 }, pages = { 035015 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen TI - Epitaxial growth of Bi₂Se₃ layers on InP substrates by hot wall epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 27 SP - 035015 PY - 2012/01/01

Conductance fluctuations induced by bulk state in quasi-one-dimensional strips of topological insulator

@article{ author = { Y. Takagaki }, title = { Conductance fluctuations induced by bulk state in quasi-one-dimensional strips of topological insulator }, journal = { Physical Review B: Solid State }, volume = { 85 }, year = { 2012 }, pages = { 155308 } }

TY - JOUR AU - Y. Takagaki TI - Conductance fluctuations induced by bulk state in quasi-one-dimensional strips of topological insulator JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 85 SP - 155308 PY - 2012/01/01

Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃

@article{ author = { Y. Takagaki and U. Jahn and M. Ramsteiner }, title = { Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃ }, journal = { Semiconductor Science and Technology }, volume = { 27 }, year = { 2012 }, pages = { 085006 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - M. Ramsteiner TI - Incorporation of transition metals in the hot-wall-epitaxy growth of Bi₂Te₃ and Sb₂Te₃ JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 27 SP - 085006 PY - 2012/01/01

Backscattering from width variations in quasi-one-dimensional strips of topological insulators

@article{ author = { Y. Takagaki }, title = { Backscattering from width variations in quasi-one-dimensional strips of topological insulators }, journal = { Journal of Physics: Condensed Matter }, volume = { 24 }, year = { 2012 }, pages = { 435301 } }

TY - JOUR AU - Y. Takagaki TI - Backscattering from width variations in quasi-one-dimensional strips of topological insulators JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 24 SP - 435301 PY - 2012/01/01

Robust topological surface states in Sb₂Te₃ layers as seen from the weak antilocalization effect

@article{ author = { Y. Takagaki and A. Giussani and K. Perumal and R. Calarco and K.-J. Friedland }, title = { Robust topological surface states in Sb₂Te₃ layers as seen from the weak antilocalization effect }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 125137 } }

TY - JOUR AU - Y. Takagaki AU - A. Giussani AU - K. Perumal AU - R. Calarco AU - K.-J. Friedland TI - Robust topological surface states in Sb₂Te₃ layers as seen from the weak antilocalization effect JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 125137 PY - 2012/01/01

Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures

@article{ author = { Y. Takagaki and J. Herfort and M. Hilse and L. Geelhaar and H. Riechert }, title = { Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures }, journal = { Journal of Physics: Condensed Matter }, volume = { 23 }, year = { 2011 }, pages = { 126002 } }

TY - JOUR AU - Y. Takagaki AU - J. Herfort AU - M. Hilse AU - L. Geelhaar AU - H. Riechert TI - Swingback in magnetization reversal in MnAs-GaAs coaxial nanowire heterostructures JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 23 SP - 126002 PY - 2011/01/01

Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy

@article{ author = { M. Hilse and Y. Takagaki and M. Ramsteiner and J. Herfort and S. Breuer and L. Geelhaar and H. Riechert }, title = { Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 307 } }

TY - JOUR AU - M. Hilse AU - Y. Takagaki AU - M. Ramsteiner AU - J. Herfort AU - S. Breuer AU - L. Geelhaar AU - H. Riechert TI - Strain in GaAs-MnAs core-shell nanowires grown by molecular beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 307 PY - 2011/01/01

Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide

@article{ author = { Y. Takagaki and A. Wirsig and M. Ramsteiner and R. Hey and C. Hucho }, title = { Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 045003 } }

TY - JOUR AU - Y. Takagaki AU - A. Wirsig AU - M. Ramsteiner AU - R. Hey AU - C. Hucho TI - Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 045003 PY - 2011/01/01

Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metals

@article{ author = { Y. Takagaki and U. Jahn and M. Ramsteiner and K.-J. Friedland }, title = { Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metals }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 085031 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - M. Ramsteiner AU - K.-J. Friedland TI - Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metals JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 085031 PY - 2011/01/01

Hot wall epitaxy of topological insulator films

@article{ author = { Y. Takagaki and B. Jenichen and U. Jahn and M. Ramsteiner and K.-J. Friedland and J. Lähnemann }, title = { Hot wall epitaxy of topological insulator films }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 125009 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - U. Jahn AU - M. Ramsteiner AU - K.-J. Friedland AU - J. Lähnemann TI - Hot wall epitaxy of topological insulator films JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 125009 PY - 2011/01/01