PDI -> Staff ->

Dr. Bernd Jenichen

Senior Scientist

Bernd Jenichen

phone: +49 30 20377 324

room: 0620

email: jen@pdi-berlin.de

 

Department: Microstructure

Core research areas: Nanoanalytics

 

Research interests:

Materials research, Nanostructures, Thin films

 

 

151 Author B. Jenichen , S. A. Stepanov , B. Brar , H. Kroemer
Title

Interface roughness of InAs/AlSb superlattices investigated by X-ray scattering

Source J. Appl. Phys. , 79 , 120 ( 1996 )
1267 Cite : Bibtex RIS
B. Jenichen, S. A. Stepanov, B. Brar, and H. Kroemer

152 Author R. Köhler , H. Raidt , F. Banhart , B. Jenichen , A. Gutjahr , M. Konuma , I. Silier , E. Bauser
Title

Semiconductor epitaxial and nonepitaxial overgrowth from solutions

Source Proc. MRS 399 , 189 ( 1996 )
1276 Cite : Bibtex RIS
R. Köhler, H. Raidt, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier, and E. Bauser

153 Author R. Köhler , H. Raidt , F. Banhart , B. Jenichen , A. Gutjahr , M. Konuma , I. Silier , E. Bauser
Title

Liquid phase epitaxy of silicon

Source Proc. ISASTSM 2 , 431 ( 1996 )
1277 Cite : Bibtex RIS
R. Köhler, H. Raidt, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier, and E. Bauser

154 Author H. Raidt , R. Köhler , F. Banhart , B. Jenichen , A. Gutjahr , M. Konuma , I. Silier , E. Bauser
Title

Adhesion in growth of defect-free silicon over silicon dioxide

Source J. Appl. Phys. , 80 , 4101 ( 1996 )
1310 Cite : Bibtex RIS
H. Raidt, R. Köhler, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier, and E. Bauser

155 Author I. Silier , A. Gutjahr , N. Nagel , P. O. Hansson , E. Czech , M. Konuma , E. Bauser , F. Banhart , R. Köhler , H. Raidt , B. Jenichen
Title

Solution growth of semiconductor-on-insulator layers

Source J. Cryst. Growth , 166 , 727 ( 1996 )
1322 Cite : Bibtex RIS
I. Silier, A. Gutjahr, N. Nagel, P. O. Hansson, E. Czech, M. Konuma, E. Bauser, F. Banhart, R. Köhler, H. Raidt, and B. Jenichen

156 Author B. Jenichen , H. Neuroth , B. Brar , H. Kroemer
Title

Structural properties of InAs/AlSb superlattices

Source Proc. MRS 379 , 493 ( 1995 )
1266 Cite : Bibtex RIS
B. Jenichen, H. Neuroth, B. Brar, and H. Kroemer