Dr. Achim Trampert

The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells

@article{ author = { E. Luna and J. Puustinen and M.Wu and J. Hilska and M.Guina and A. Trampert }, title = { The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells }, journal = { Nanoscience and Nanotechnology Letters }, volume = { 9 }, year = { 2017 }, pages = { 1132 } }

TY - JOUR AU - E. Luna AU - J. Puustinen AU - M.Wu AU - J. Hilska AU - M.Guina AU - A. Trampert TI - The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wells JF - Nanoscience and Nanotechnology Letters JA - Nanosci. Nanotechnol. Lett. J1 - ISSN: 1941-4900 (Print); EISSN: 1941-4919 (Online) VL - 9 SP - 1132 PY - 2017/07/01

GaSbBi/GaSb quantum well laser diodes

@article{ author = { O. Delorme and L. Cerutti and E. Luna and G.Narcy and A. Trampert and E. Tournie and J.-B.Rodriguez }, title = { GaSbBi/GaSb quantum well laser diodes }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 222106 } }

TY - JOUR AU - O. Delorme AU - L. Cerutti AU - E. Luna AU - G.Narcy AU - A. Trampert AU - E. Tournie AU - J.-B.Rodriguez TI - GaSbBi/GaSb quantum well laser diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 222106 PY - 2017/06/02

Tailoring of microstructure and optoelectronic properties of Aluminum doped Zinc Oxide changing gun tilt

@article{ author = { S. Fernandez and J. Grandal and A. Trampert and F.B. Naranjo }, title = { Tailoring of microstructure and optoelectronic properties of Aluminum doped Zinc Oxide changing gun tilt }, journal = { Materials Science in Semiconductor Processing }, volume = { 63 }, year = { 2017 }, pages = { 115 } }

TY - JOUR AU - S. Fernandez AU - J. Grandal AU - A. Trampert AU - F.B. Naranjo TI - Tailoring of microstructure and optoelectronic properties of Aluminum doped Zinc Oxide changing gun tilt JF - Materials Science in Semiconductor Processing JA - Mater. Sci. Semicond. Process. J1 - MSSP VL - 63 SP - 115 PY - 2017/06/01

Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells

@article{ author = { E. Luna and R. Gargallo-Caballero and F. Ishikawa and A. Trampert }, title = { Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 201906 } }

TY - JOUR AU - E. Luna AU - R. Gargallo-Caballero AU - F. Ishikawa AU - A. Trampert TI - Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al,Ga)As quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 201906 PY - 2017/05/19

Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination

@article{ author = { M. Hempel and B. Röben and M. Niehle and L. Schrottke and A. Trampert and H. T. Grahn }, title = { Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination }, journal = { AIP Advances }, volume = { 7 }, year = { 2017 }, pages = { 055201 } }

TY - JOUR AU - M. Hempel AU - B. Röben AU - M. Niehle AU - L. Schrottke AU - A. Trampert AU - H. T. Grahn TI - Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination JF - AIP Advances JA - AIP Adv. J1 - VL - 7 SP - 055201 PY - 2017/05/04

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

@article{ author = { S. Gaucher and B. Jenichen and J. Kalt and U. Jahn and A. Trampert and J. Herfort }, title = { Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy }, journal = { Applied Physics Letters }, volume = { 110 }, year = { 2017 }, pages = { 102103 } }

TY - JOUR AU - S. Gaucher AU - B. Jenichen AU - J. Kalt AU - U. Jahn AU - A. Trampert AU - J. Herfort TI - Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 110 SP - 102103 PY - 2017/03/08

Supernormal hardness increase of dilute Ga(As, N) thin films

@article{ author = { J. Berggren and M. Hanke and E. Luna and A. Trampert }, title = { Supernormal hardness increase of dilute Ga(As, N) thin films }, journal = { Journal of Applied Physics }, volume = { 121 }, year = { 2017 }, pages = { 095105 } }

TY - JOUR AU - J. Berggren AU - M. Hanke AU - E. Luna AU - A. Trampert TI - Supernormal hardness increase of dilute Ga(As, N) thin films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 121 SP - 095105 PY - 2017/03/07

Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy

@article{ author = { T. Krause and M. Hanke and L. Nicolai and Z. Cheng and M. Niehle and A. Trampert and M. Kahnt and G. Falkenberg and C. Schroer and J. Hartmann and H. Zhou and H.-H. Wehmann and A. Waag }, title = { Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 024033 } }

TY - JOUR AU - T. Krause AU - M. Hanke AU - L. Nicolai AU - Z. Cheng AU - M. Niehle AU - A. Trampert AU - M. Kahnt AU - G. Falkenberg AU - C. Schroer AU - J. Hartmann AU - H. Zhou AU - H.-H. Wehmann AU - A. Waag TI - Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 7 SP - 024033 PY - 2017/02/28

Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy

@article{ author = { J.-B. Barakat and S. Dadgostar and K. Hestroffer and O. Bierwagen and A. Trampert and F. Hatami }, title = { Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { tbd }, year = { 2017 }, pages = { tbd } }

TY - JOUR AU - J.-B. Barakat AU - S. Dadgostar AU - K. Hestroffer AU - O. Bierwagen AU - A. Trampert AU - F. Hatami TI - Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - tbd SP - tbd PY - 2017/02/22

Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

@article{ author = { M. Niehle and A. Trampert and J.-B. Rodriguez and L. Cerutti and E. Tournie }, title = { Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations }, journal = { Scripta Materialia }, volume = { 132 }, year = { 2017 }, pages = { 5 } }

TY - JOUR AU - M. Niehle AU - A. Trampert AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie TI - Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations JF - Scripta Materialia JA - J1 - VL - 132 SP - 5 PY - 2017/01/18