Dr. Achim Trampert

Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy

@article{ author = { T. Krause and M. Hanke and L. Nicolai and Z. Cheng and M. Niehle and A. Trampert and M. Kahnt and G. Falkenberg and C. Schroer and J. Hartmann and H. Zhou and H.-H. Wehmann and A. Waag }, title = { Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 024033 } }

TY - JOUR AU - T. Krause AU - M. Hanke AU - L. Nicolai AU - Z. Cheng AU - M. Niehle AU - A. Trampert AU - M. Kahnt AU - G. Falkenberg AU - C. Schroer AU - J. Hartmann AU - H. Zhou AU - H.-H. Wehmann AU - A. Waag TI - Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 7 SP - 024033 PY - 2017/02/28

Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy

@article{ author = { J.-B. Barakat and S. Dadgostar and K. Hestroffer and O. Bierwagen and A. Trampert and F. Hatami }, title = { Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy }, journal = { Journal of Crystal Growth }, volume = { tbd }, year = { 2017 }, pages = { tbd } }

TY - JOUR AU - J.-B. Barakat AU - S. Dadgostar AU - K. Hestroffer AU - O. Bierwagen AU - A. Trampert AU - F. Hatami TI - Growth of GaP and AlGaP on GaP(111)B using gas-source molecular-beam epitaxy JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - tbd SP - tbd PY - 2017/02/22

Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations

@article{ author = { M. Niehle and A. Trampert and J.-B. Rodriguez and L. Cerutti and E. Tournie }, title = { Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations }, journal = { Scripta Materialia }, volume = { 132 }, year = { 2017 }, pages = { 5 } }

TY - JOUR AU - M. Niehle AU - A. Trampert AU - J.-B. Rodriguez AU - L. Cerutti AU - E. Tournie TI - Electron tomography on III-Sb heterostructures on vicinal Si(001) substrates: Anti-phase boundaries as a sink for threading dislocations JF - Scripta Materialia JA - J1 - VL - 132 SP - 5 PY - 2017/01/18

Polarity-induced selective area epitaxy of GaN nanowires

@article{ author = { Z. de Souza Schiaber and G. Calabrese and X. Kong and A. Trampert and B. Jenichen and J. H. Dias da Silva and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Polarity-induced selective area epitaxy of GaN nanowires }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 63 } }

TY - JOUR AU - Z. de Souza Schiaber AU - G. Calabrese AU - X. Kong AU - A. Trampert AU - B. Jenichen AU - J. H. Dias da Silva AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Polarity-induced selective area epitaxy of GaN nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 63 PY - 2017/01/11

Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth

@article{ author = { R. B. Lewis and L. Nicolai and H. Küpers and M. Ramsteiner and A. Trampert and L. Geelhaar }, title = { Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth }, journal = { Nano Letters }, volume = { 17 }, year = { 2017 }, pages = { 136 } }

TY - JOUR AU - R. B. Lewis AU - L. Nicolai AU - H. Küpers AU - M. Ramsteiner AU - A. Trampert AU - L. Geelhaar TI - Anomalous strain relaxation in core-shell nanowires via simultaneous coherent and incoherent growth JF - Nano Letters JA - Nano Lett. J1 - VL - 17 SP - 136 PY - 2017/01/01

Structural Properties of Co2TiSi films on GaAs(001)

@article{ author = { B. Jenichen and J. Herfort and M. Hanke and U. Jahn and X. Kong and M. T. Dau and A. Trampert and H. Kirmse and S. C. Erwin }, title = { Structural Properties of Co2TiSi films on GaAs(001) }, journal = { Journal of Applied Physics }, volume = { 120 }, year = { 2016 }, pages = { 225304 } }

TY - JOUR AU - B. Jenichen AU - J. Herfort AU - M. Hanke AU - U. Jahn AU - X. Kong AU - M. T. Dau AU - A. Trampert AU - H. Kirmse AU - S. C. Erwin TI - Structural Properties of Co2TiSi films on GaAs(001) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 120 SP - 225304 PY - 2016/12/08

Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer

@article{ author = { P. Yu and J. Lin and L. Sun and Q. L. Le and X. Yu and G. Gao and C.-H. Hsu and D. Wu and T.-R. Chang and Q. Zeng and F. Liu and Q. J. Wang and H.-T. Jeng and H. Lin and A. Trampert and Z. Shen and K. Suenaga and Z. Liu }, title = { Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer }, journal = { Advanced Materials }, volume = { }, year = { 2016 }, pages = { 1 } }

TY - JOUR AU - P. Yu AU - J. Lin AU - L. Sun AU - Q. L. Le AU - X. Yu AU - G. Gao AU - C.-H. Hsu AU - D. Wu AU - T.-R. Chang AU - Q. Zeng AU - F. Liu AU - Q. J. Wang AU - H.-T. Jeng AU - H. Lin AU - A. Trampert AU - Z. Shen AU - K. Suenaga AU - Z. Liu TI - Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer JF - Advanced Materials JA - Adv. Mater. J1 - VL - SP - 1 PY - 2016/11/22

Toward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism

@article{ author = { G. Gao and C. Chen and X. Xie and Y. Su and S. Kang and G. Zhu and D. Gao and A. Trampert and L. Cai }, title = { Toward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism }, journal = { Materials Research Letters }, volume = { }, year = { 2016 }, pages = { 1 } }

TY - JOUR AU - G. Gao AU - C. Chen AU - X. Xie AU - Y. Su AU - S. Kang AU - G. Zhu AU - D. Gao AU - A. Trampert AU - L. Cai TI - Toward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism JF - Materials Research Letters JA - Mater. Res. Lett. J1 - VL - SP - 1 PY - 2016/11/17

Polarity in GaN and ZnO: theory, measurement, growth, and devices

@article{ author = { J. Zuniga-Perez and V. Consonni and L. Lymperakis and X. Kong and A. Trampert and S. Fernández-Garrido and O. Brandt and H. Renevier and S. Keller and K. Hestroffer and M. R. Wagner and J. Sebastián Reparaz and F. Akyol and S. Rajan and S. Rennesson and T. Palacios and G. Feuillet }, title = { Polarity in GaN and ZnO: theory, measurement, growth, and devices }, journal = { Applied Physics Reviews }, volume = { 3 }, year = { 2016 }, pages = { 041303 } }

TY - JOUR AU - J. Zuniga-Perez AU - V. Consonni AU - L. Lymperakis AU - X. Kong AU - A. Trampert AU - S. Fernández-Garrido AU - O. Brandt AU - H. Renevier AU - S. Keller AU - K. Hestroffer AU - M. R. Wagner AU - J. Sebastián Reparaz AU - F. Akyol AU - S. Rajan AU - S. Rennesson AU - T. Palacios AU - G. Feuillet TI - Polarity in GaN and ZnO: theory, measurement, growth, and devices JF - Applied Physics Reviews JA - Appl. Phys. Rev. J1 - VL - 3 SP - 041303 PY - 2016/11/15

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

@article{ author = { C. Pfüller and P. Corfdir and C. Hauswald and T. Flissikowski and X. Kong and J. K. Zettler and S. Fernández-Garrido and P. Dogan and H. T. Grahn and A. Trampert and L. Geelhaar and O. Brandt }, title = { Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155308 } }

TY - JOUR AU - C. Pfüller AU - P. Corfdir AU - C. Hauswald AU - T. Flissikowski AU - X. Kong AU - J. K. Zettler AU - S. Fernández-Garrido AU - P. Dogan AU - H. T. Grahn AU - A. Trampert AU - L. Geelhaar AU - O. Brandt TI - Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 94 SP - 155308 PY - 2016/10/17