Dr. Achim Trampert

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

@article{ author = { M. Musolino and A. Tahraoui and S. Fernández-Garrido and O. Brandt and A. Trampert and L. Geelhaar and H. Riechert }, title = { Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 085605 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - S. Fernández-Garrido AU - O. Brandt AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 26 SP - 085605 PY - 2015/02/06

Real structure of lattice matched GaAs–Fe3Si core–shell nanowires

@article{ author = { B. Jenichen and M. Hilse and J. Herfort and A. Trampert }, title = { Real structure of lattice matched GaAs–Fe3Si core–shell nanowires }, journal = { Journal of Crystal Growth }, volume = { 410 }, year = { 2015 }, pages = { 1 } }

TY - JOUR AU - B. Jenichen AU - M. Hilse AU - J. Herfort AU - A. Trampert TI - Real structure of lattice matched GaAs–Fe3Si core–shell nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 410 SP - 1 PY - 2015/01/02

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

@article{ author = { C. Somaschini and A. Biermanns and S. Bietti and G. Bussone and A. Trampert and S. Sanguinetti and H. Riechert and U. Pietsch and L. Geelhaar }, title = { Axial InAs/GaAs heterostructures on silicon in a nanowire geometry }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 485602 } }

TY - JOUR AU - C. Somaschini AU - A. Biermanns AU - S. Bietti AU - G. Bussone AU - A. Trampert AU - S. Sanguinetti AU - H. Riechert AU - U. Pietsch AU - L. Geelhaar TI - Axial InAs/GaAs heterostructures on silicon in a nanowire geometry JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 25 SP - 485602 PY - 2014/11/13

Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study

@article{ author = { E. Luna and J. Grandal and E. Gallardo and J.M. Calleja and M.A. Sanchez-Garcia and E. Calleja and A. Trampert }, title = { Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study }, journal = { Microscopy and Microanalysis }, volume = { 20 }, year = { 2014 }, pages = { 1471 } }

TY - JOUR AU - E. Luna AU - J. Grandal AU - E. Gallardo AU - J.M. Calleja AU - M.A. Sanchez-Garcia AU - E. Calleja AU - A. Trampert TI - Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study JF - Microscopy and Microanalysis JA - Microsc Microanal J1 - VL - 20 SP - 1471 PY - 2014/09/29

Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

@article{ author = { J. Grandal and M. Wu and X. Kong and M. Hanke and E. Dimakis and L. Geelhaar and H. Riechert and A. Trampert }, title = { Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 121602 } }

TY - JOUR AU - J. Grandal AU - M. Wu AU - X. Kong AU - M. Hanke AU - E. Dimakis AU - L. Geelhaar AU - H. Riechert AU - A. Trampert TI - Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 121602 PY - 2014/09/22

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

@article{ author = { M. Wu and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Observation of atomic ordering of triple-period-A and -B type in GaAsBi }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 041602 } }

TY - JOUR AU - M. Wu AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Observation of atomic ordering of triple-period-A and -B type in GaAsBi JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 041602 PY - 2014/07/30

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

@article{ author = { A. Proessdorf and M. Niehle and M. Hanke and F. Grosse and V. M. Kaganer and O. Bierwagen and A. Trampert }, title = { Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 021601 } }

TY - JOUR AU - A. Proessdorf AU - M. Niehle AU - M. Hanke AU - F. Grosse AU - V. M. Kaganer AU - O. Bierwagen AU - A. Trampert TI - Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 021601 PY - 2014/07/14

Atomic structure and energetics of GdN clusters in Gd-doped GaN

@article{ author = { M. Wu and S. C. Erwin and A. Trampert }, title = { Atomic structure and energetics of GdN clusters in Gd-doped GaN }, journal = { Acta Materialia }, volume = { 76 }, year = { 2014 }, pages = { 87 } }

TY - JOUR AU - M. Wu AU - S. C. Erwin AU - A. Trampert TI - Atomic structure and energetics of GdN clusters in Gd-doped GaN JF - Acta Materialia JA - Acta Mat. J1 - VL - 76 SP - 87 PY - 2014/06/09

Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates

@article{ author = { E. Dimakis and U. Jahn and M. Ramsteiner and A. Tahraoui and J. Grandal and X. Kong and O. Marquardt and A. Trampert and H. Riechert and L. Geelhaar }, title = { Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 2604 } }

TY - JOUR AU - E. Dimakis AU - U. Jahn AU - M. Ramsteiner AU - A. Tahraoui AU - J. Grandal AU - X. Kong AU - O. Marquardt AU - A. Trampert AU - H. Riechert AU - L. Geelhaar TI - Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 2604 PY - 2014/05/14

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

@article{ author = { M. Wu and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 205605 } }

TY - JOUR AU - M. Wu AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 25 SP - 205605 PY - 2014/04/30