Dr. Achim Trampert

Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)

@article{ author = { B. Jenichen and M. Hilse and J. Herfort and A. Trampert }, title = { Facetted growth of Fe3Si shells around GaAs nanowires on Si(111) }, journal = { Journal of Crystal Growth }, volume = { 427 }, year = { 2015 }, pages = { 21 } }

TY - JOUR AU - B. Jenichen AU - M. Hilse AU - J. Herfort AU - A. Trampert TI - Facetted growth of Fe3Si shells around GaAs nanowires on Si(111) JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 427 SP - 21 PY - 2015/07/24

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

@article{ author = { M.H. Oliveira Jr. and J. M. J. Lopes and T. Schumann and L. A. Galves and M. Ramsteiner and K. Berlin and A. Trampert and H. Riechert }, title = { Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces }, journal = { Nature Communications }, volume = { 6 }, year = { 2015 }, pages = { 7632 } }

TY - JOUR AU - M.H. Oliveira Jr. AU - J. M. J. Lopes AU - T. Schumann AU - L. A. Galves AU - M. Ramsteiner AU - K. Berlin AU - A. Trampert AU - H. Riechert TI - Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces JF - Nature Communications JA - Nat. Commun. J1 - VL - 6 SP - 7632 PY - 2015/07/09

Interface structure and strain state of InAs nano-clusters embedded in silicon

@article{ author = { M. Wu and A. Trampert and T. Al-Zoubi and M. Benyoucef and J. P. Reithmaier }, title = { Interface structure and strain state of InAs nano-clusters embedded in silicon }, journal = { Acta Materialia }, volume = { 90 }, year = { 2015 }, pages = { 133 } }

TY - JOUR AU - M. Wu AU - A. Trampert AU - T. Al-Zoubi AU - M. Benyoucef AU - J. P. Reithmaier TI - Interface structure and strain state of InAs nano-clusters embedded in silicon JF - Acta Materialia JA - Acta Mat. J1 - VL - 90 SP - 133 PY - 2015/05/15

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers

@article{ author = { E. Luna and M.Wu and J. Puustinen and M. Guina and A. Trampert }, title = { Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers }, journal = { Journal of Applied Physics }, volume = { 117 }, year = { 2015 }, pages = { 185302 } }

TY - JOUR AU - E. Luna AU - M.Wu AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 117 SP - 185302 PY - 2015/05/08

Electron tomography on nanopores embedded in epitaxial GaSb thin films

@article{ author = { M. Niehle and A. Trampert }, title = { Electron tomography on nanopores embedded in epitaxial GaSb thin films }, journal = { Micron }, volume = { 73 }, year = { 2015 }, pages = { 54 } }

TY - JOUR AU - M. Niehle AU - A. Trampert TI - Electron tomography on nanopores embedded in epitaxial GaSb thin films JF - Micron JA - Micron J1 - VL - 73 SP - 54 PY - 2015/04/01

Domain matching epitaxy of cubic In2O3 on r-plane sapphire

@article{ author = { P. Vogt and A. Trampert and M. Ramsteiner and O. Bierwagen }, title = { Domain matching epitaxy of cubic In2O3 on r-plane sapphire }, journal = { Physica Status Solidi A }, volume = { 7 }, year = { 2015 }, pages = { 1433 } }

TY - JOUR AU - P. Vogt AU - A. Trampert AU - M. Ramsteiner AU - O. Bierwagen TI - Domain matching epitaxy of cubic In2O3 on r-plane sapphire JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 7 SP - 1433 PY - 2015/03/05

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11-22) GaN templates

@article{ author = { M. Niehle and A. Trampert and S. Albert and A. Bengoechea-Encabo and E. Calleja }, title = { Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11-22) GaN templates }, journal = { APL Materials }, volume = { 3 }, year = { 2015 }, pages = { 036102 } }

TY - JOUR AU - M. Niehle AU - A. Trampert AU - S. Albert AU - A. Bengoechea-Encabo AU - E. Calleja TI - Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11-22) GaN templates JF - APL Materials JA - APL Mater. J1 - APLM VL - 3 SP - 036102 PY - 2015/03/03

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

@article{ author = { M. Musolino and A. Tahraoui and S. Fernández-Garrido and O. Brandt and A. Trampert and L. Geelhaar and H. Riechert }, title = { Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 085605 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - S. Fernández-Garrido AU - O. Brandt AU - A. Trampert AU - L. Geelhaar AU - H. Riechert TI - Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 26 SP - 085605 PY - 2015/02/06

Real structure of lattice matched GaAs–Fe3Si core–shell nanowires

@article{ author = { B. Jenichen and M. Hilse and J. Herfort and A. Trampert }, title = { Real structure of lattice matched GaAs–Fe3Si core–shell nanowires }, journal = { Journal of Crystal Growth }, volume = { 410 }, year = { 2015 }, pages = { 1 } }

TY - JOUR AU - B. Jenichen AU - M. Hilse AU - J. Herfort AU - A. Trampert TI - Real structure of lattice matched GaAs–Fe3Si core–shell nanowires JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 410 SP - 1 PY - 2015/01/02

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

@article{ author = { C. Somaschini and A. Biermanns and S. Bietti and G. Bussone and A. Trampert and S. Sanguinetti and H. Riechert and U. Pietsch and L. Geelhaar }, title = { Axial InAs/GaAs heterostructures on silicon in a nanowire geometry }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 485602 } }

TY - JOUR AU - C. Somaschini AU - A. Biermanns AU - S. Bietti AU - G. Bussone AU - A. Trampert AU - S. Sanguinetti AU - H. Riechert AU - U. Pietsch AU - L. Geelhaar TI - Axial InAs/GaAs heterostructures on silicon in a nanowire geometry JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 485602 PY - 2014/11/13