PDI -> Staff ->

Dr. Achim Trampert

Head of Department Microstructure

Achim Trampert

phone: +49 30 20377 280

room: 0615

email: trampert@pdi-berlin.de

 

Department: Microstructure

Core research areas: Nanoanalytics , Nanofabrication , III-V nanowires for optoelectronics

 

 

1 Author Y. Takagaki , B. Jenichen , M. Ramsteiner , A. Trampert
Title

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

Source J. Alloy. Comp. , 824 , 153880 ( 2020 )
DOI : 10.1016/j.jallcom.2020.153880 | 3125 Cite : Bibtex RIS
Y. Takagaki, B. Jenichen, M. Ramsteiner, and A. Trampert

2 Author J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar
Title

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

Source ACS Appl. Nano Mater. , xxx , xxx ( 2019 )
DOI : 10.1021/acsanm.9b01866 | Download arXiv: 1908.10134 | 3132 Cite : Bibtex RIS
J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt, and L. Geelhaar

3 Author M. Azadmand , T. Auzelle , J. Lähnemann , G. Gao , L. Nicolai , M. Ramsteiner , A. Trampert , S. Sanguinetti , O. Brandt , L. Geelhaar
Title

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

Source Phys. Status Solidi RRL , xxx , xxx ( 2019 )
DOI : 10.1002/pssr.201900615 | 3149 Cite : Bibtex RIS
M. Azadmand, T. Auzelle, J. Lähnemann, G. Gao, L. Nicolai, M. Ramsteiner, A. Trampert, S. Sanguinetti, O. Brandt, and L. Geelhaar

4 Author M. Terker , B. Jenichen , J. Herfort , A. Trampert
Title

In-situ transmission electron microscopy of solid phase epitaxy of Ge on Fe3Si

Source Semicond. Sci. Technol. , 34 , 124004 ( 2019 )
DOI : 10.1088/1361-6641/ab4fad | 3148 Cite : Bibtex RIS
M. Terker, B. Jenichen, J. Herfort, and A. Trampert

5 Author B. Jenichen , Z. Cheng , M. Hanke , J. Herfort , A. Trampert
Title

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate

Source Semicond. Sci. Technol. , 34 , 124002 ( 2019 )
DOI : 10.1088/1361-6641/ab4c79 | Download arXiv: 1907.05076 | 3124 Cite : Bibtex RIS
B. Jenichen, Z. Cheng, M. Hanke, J. Herfort, and A. Trampert

6 Author Miguel García-Tecedor , Javier Bartolomé , David Maestre , A. Trampert , Ana Cremades
Title

Li2SnO3 branched nano- and microstructures with intense and broadband white-light emission

Source Nano Res. , 12 , 441 ( 2019 )
DOI : 10.1007/s12274-018-2236-0 | 3085 Cite : Bibtex RIS
Miguel García-Tecedor, Javier Bartolomé, David Maestre, A. Trampert, and Ana Cremades

7 Author O. Delorme , L. Cerutti , E. Luna , A. Trampert , E. Tournie , J.-B. Rodriguez
Title

Molecular-beam epitaxy of GaInSbBi alloys

Source J. Appl. Phys. , 126 , 155304 ( 2019 )
DOI : 10.1063/1.5096226 | Download: PDF | 3154 Cite : Bibtex RIS
O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournie, and J.-B. Rodriguez

8 Author M. Niehle , J.-B. Rodriguez , L. Cerutti , E. Tournie , A. Trampert
Title

The Interaction of Extended Defects as Origin of Step Bunching in Epitaxial III-V Layers on Vicinal Si(001) Substrates

Source Phys. Status Solidi RRL , 13 , 1900290 ( 2019 )
DOI : 10.1002/pssr.201900290 | 3131 Cite : Bibtex RIS
M. Niehle, J.-B. Rodriguez, L. Cerutti, E. Tournie, and A. Trampert

9 Author Ryan B. Lewis , A. Trampert , E. Luna , J. Herranz , Carsten Pfüller , L. Geelhaar
Title

Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots

Source Semicond. Sci. Technol. , 34 , 105016 ( 2019 )
DOI : 10.1088/1361-6641/ab3c23 | Download arXiv: 1905.05303 | 3107 Cite : Bibtex RIS
Ryan B. Lewis, A. Trampert, E. Luna, J. Herranz, Carsten Pfüller, and L. Geelhaar

10 Author E. Luna , M. Wu , T. Aoki , M.R. McCartney , J. Puustinen , J. Hilska , M. Guina , D. J. Smith , A. Trampert
Title

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Source J. Appl. Phys. , 126 , 085305 ( 2019 )
DOI : 10.1063/1.5111532 | Download: PDF | 3136 Cite : Bibtex RIS
E. Luna, M. Wu, T. Aoki, M.R. McCartney, J. Puustinen, J. Hilska, M. Guina, D. J. Smith, and A. Trampert