Hans-Peter Schönherr

Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates

@article{ author = { R. Nötzel and Z. C. Niu and M. Ramsteiner and H.-P. Schönherr and A. Trampert and L. Däweritz and K. H. Ploog }, title = { Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates }, journal = { Nature }, volume = { 392 }, year = { 1998 }, pages = { 56 } }

TY - JOUR AU - R. Nötzel AU - Z. C. Niu AU - M. Ramsteiner AU - H.-P. Schönherr AU - A. Trampert AU - L. Däweritz AU - K. H. Ploog TI - Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates JF - Nature JA - Nature J1 - Nat VL - 392 SP - 56 PY - 1998/01/01

Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates

@article{ author = { H.-P. Schönherr and J. Fricke and Z. C. Niu and K. J. Friedland and R. Nötzel and K. H. Ploog }, title = { Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 566 } }

TY - JOUR AU - H.-P. Schönherr AU - J. Fricke AU - Z. C. Niu AU - K. J. Friedland AU - R. Nötzel AU - K. H. Ploog TI - Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 566 PY - 1998/01/01

Patterned growth on GaAs(311)A substrates

@article{ author = { R. Nötzel and J. Menniger and M. Ramsteiner and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Patterned growth on GaAs(311)A substrates }, journal = { Journal of Crystal Growth }, volume = { 175/176 }, year = { 1997 }, pages = { 1114 } }

TY - JOUR AU - R. Nötzel AU - J. Menniger AU - M. Ramsteiner AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Patterned growth on GaAs(311)A substrates JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 175/176 SP - 1114 PY - 1997/01/01

Enhancement of optical nonlinearity in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates

@article{ author = { R. Nötzel and M. Ramsteiner and Z. Niu and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Enhancement of optical nonlinearity in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 70 }, year = { 1997 }, pages = { 1578 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - Z. Niu AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Enhancement of optical nonlinearity in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 70 SP - 1578 PY - 1997/01/01

Selectivity of growth on patterned GaAs (311)A substrates

@article{ author = { R. Nötzel and J. Menniger and M. Ramsteiner and A. Ruiz and H.-P. Schönherr and K. H. Ploog }, title = { Selectivity of growth on patterned GaAs (311)A substrates }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 1132 } }

TY - JOUR AU - R. Nötzel AU - J. Menniger AU - M. Ramsteiner AU - A. Ruiz AU - H.-P. Schönherr AU - K. H. Ploog TI - Selectivity of growth on patterned GaAs (311)A substrates JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 1132 PY - 1996/01/01

Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy }, journal = { Japanese Journal of Applied Physics, Part 2 }, volume = { 35 }, year = { 1996 }, pages = { L297 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Micro-photoluminescence study at room temperature of sidewall quantum wires formed on patterned GaAs (311)A substrates by molecular beam epitaxy JF - Japanese Journal of Applied Physics, Part 2 JA - Jpn. J. Appl. Phys., Part 2 J1 - JJAP2 VL - 35 SP - L297 PY - 1996/01/01

Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires

@article{ author = { R. Nötzel and M. Ramsteiner and J. Menniger and A. Trampert and H.-P. Schönherr and L. Däweritz and K. H. Ploog }, title = { Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires }, journal = { Journal of Applied Physics }, volume = { 80 }, year = { 1996 }, pages = { 4108 } }

TY - JOUR AU - R. Nötzel AU - M. Ramsteiner AU - J. Menniger AU - A. Trampert AU - H.-P. Schönherr AU - L. Däweritz AU - K. H. Ploog TI - Patterned growth on high-index GaAs (n11) substrates: application to sidewall quantum wires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 80 SP - 4108 PY - 1996/01/01

Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry

@article{ author = { L. Tapfer and L. De Caro and C. Giannini and H.-P. Schönherr and K. H. Ploog }, title = { Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry }, journal = { Solid State Communications }, volume = { 98 }, year = { 1996 }, pages = { 599 } }

TY - JOUR AU - L. Tapfer AU - L. De Caro AU - C. Giannini AU - H.-P. Schönherr AU - K. H. Ploog TI - Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry JF - Solid State Communications JA - Solid State Commun. J1 - SSC VL - 98 SP - 599 PY - 1996/01/01

Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs

@article{ author = { H. Yang and O. Brandt and M. Wassermeier and J. Behrend and H.-P. Schönherr and K. H. Ploog }, title = { Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs }, journal = { Applied Physics Letters }, volume = { 68 }, year = { 1996 }, pages = { 244 } }

TY - JOUR AU - H. Yang AU - O. Brandt AU - M. Wassermeier AU - J. Behrend AU - H.-P. Schönherr AU - K. H. Ploog TI - Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 68 SP - 244 PY - 1996/01/01