Dr. Timur Flissikowski

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

@article{ author = { T. Auzelle and C. Sinito and J. Lähnemann and G. Gao and T. Flissikowski and A. Trampert and O. Brandt and S. Fernández-Garrido }, title = { Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 4 } }

TY - JOUR AU - T. Auzelle AU - C. Sinito AU - J. Lähnemann AU - G. Gao AU - T. Flissikowski AU - A. Trampert AU - O. Brandt AU - S. Fernández-Garrido TI - Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 4 PY - 2022/04/15

Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion

@article{ author = { O. Brandt and V. M. Kaganer and J. Lähnemann and T. Flissikowski and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and C. Chèze and R. Calarco and H. T. Grahn and U. Jahn }, title = { Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion }, journal = { Physical Review Applied }, volume = { 17 }, year = { 2022 }, pages = { 024018 } }

TY - JOUR AU - O. Brandt AU - V. M. Kaganer AU - J. Lähnemann AU - T. Flissikowski AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - C. Chèze AU - R. Calarco AU - H. T. Grahn AU - U. Jahn TI - Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 17 SP - 024018 PY - 2022/02/07

Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells

@article{ author = { Hanno Küpers and Ryan B. Lewis and Pierre Corfdir and Michael Niehle and T. Flissikowski and H. T. Grahn and A. Trampert and O. Brandt and L. Geelhaar }, title = { Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 50220 } }

TY - JOUR AU - Hanno Küpers AU - Ryan B. Lewis AU - Pierre Corfdir AU - Michael Niehle AU - T. Flissikowski AU - H. T. Grahn AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 50220 PY - 2021/10/13

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { 8 }, year = { 2021 }, pages = { 1718 } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - 8 SP - 1718 PY - 2021/05/12

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells

@article{ author = { H. Küpers and P. Corfdir and R. B. Lewis and T. Flissikowski and A. Tahraoui and H. T. Grahn and O. Brandt and L. Geelhaar }, title = { Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 13 }, year = { 2019 }, pages = { 1800527 } }

TY - JOUR AU - H. Küpers AU - P. Corfdir AU - R. B. Lewis AU - T. Flissikowski AU - A. Tahraoui AU - H. T. Grahn AU - O. Brandt AU - L. Geelhaar TI - Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 13 SP - 1800527 PY - 2019/02/07

Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures

@article{ author = { R. B. Lewis and P. Corfdir and H. Küpers and T. Flissikowski and O. Brandt and L. Geelhaar }, title = { Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2343 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Küpers AU - T. Flissikowski AU - O. Brandt AU - L. Geelhaar TI - Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2343 PY - 2018/03/23

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. van Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. van Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

@article{ author = { C. Chèze and F. Feix and J. Lähnemann and T. Flissikowski and M. Krysko and P. Wolny and H. Turski and C. Skierbiszewski and O. Brandt }, title = { Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 022102 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - J. Lähnemann AU - T. Flissikowski AU - M. Krysko AU - P. Wolny AU - H. Turski AU - C. Skierbiszewski AU - O. Brandt TI - Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 022102 PY - 2018/01/08

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 014032 PY - 2017/07/27