Senior Scientist
phone: +49 30 20377 336
room: 0518
email: flissi@pdi-berlin.de
Department: Semiconductor Spectroscopy
Core research areas: Nanoanalytics , III-V nanowires for optoelectronics
1 | Author | T. Auzelle , C. Sinito , J. Lähnemann , G. Gao , T. Flissikowski , A. Trampert , O. Brandt , S. Fernández-Garrido |
Title |
Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy |
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Source | Phys. Rev. Appl. , 17 , 4 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.044030 | Download arXiv: 2111.12969 | Cite : Bibtex RIS |
2 | Author | O. Brandt , V. M. Kaganer , J. Lähnemann , T. Flissikowski , C. Pfüller , K. K. Sabelfeld , A. E. Kireeva , C. Chèze , R. Calarco , H. T. Grahn , U. Jahn |
Title |
Carrier diffusion in GaN: A cathodoluminescence study. II: Ambipolar vs. exciton diffusion |
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Source | Phys. Rev. Appl. , 17 , 024018 ( 2022 ) | |
DOI : 10.1103/PhysRevApplied.17.024018 | Download arXiv: 2009.13983 | Cite : Bibtex RIS |
3 | Author | Hanno Küpers , Ryan B. Lewis , Pierre Corfdir , Michael Niehle , T. Flissikowski , H. T. Grahn , A. Trampert , O. Brandt , L. Geelhaar |
Title |
Drastic effect of sequential deposition resulting from flux directionality for the luminescence efficiency of nanowire shells |
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Source | ACS Appl. Mater. Interfaces , 13 , 50220 ( 2021 ) | |
DOI : 10.1021/acsami.1c12371 | Download arXiv: 2106.12309 | Cite : Bibtex RIS |
4 | Author | T. Auzelle , M. Azadmand , T. Flissikowski , M. Ramsteiner , K. Morgenroth , C. Stemmler , S. Fernández-Garrido , S. Sanguinetti , H. T. Grahn , L. Geelhaar , O. Brandt |
Title |
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx |
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Source | ACS Photonics , 8 , 1718 ( 2021 ) | |
DOI : 10.1021/acsphotonics.1c00224 | Download arXiv: 2001.06387 | Cite : Bibtex RIS |
5 | Author | C. Sinito , P. Corfdir , C. Pfüller , G. Gao , J. Bartolomé , S. Kölling , A. Rodil Doblado , U. Jahn , J. Lähnemann , T. Auzelle , J. K. Zettler , T. Flissikowski , P. Koenraad , H. T. Grahn , L. Geelhaar , S. Fernández-Garrido , O. Brandt |
Title |
Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy |
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Source | Nano Lett. , 19 , 5938 ( 2019 ) | |
DOI : 10.1021/acs.nanolett.9b01521 | Download arXiv: 1905.04090 | Cite : Bibtex RIS |
6 | Author | H. Küpers , P. Corfdir , R. B. Lewis , T. Flissikowski , A. Tahraoui , H. T. Grahn , O. Brandt , L. Geelhaar |
Title |
Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells |
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Source | Phys. Status Solidi-Rapid Res. Lett. , 13 , 1800527 ( 2019 ) | |
DOI : 10.1002/pssr.201800527 | Cite : Bibtex RIS |
7 | Author | R. B. Lewis , P. Corfdir , H. Küpers , T. Flissikowski , O. Brandt , L. Geelhaar |
Title |
Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures |
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Source | Nano Lett. , 18 , 2343 ( 2018 ) | |
DOI : 10.1021/acs.nanolett.7b05221 | Cite : Bibtex RIS |
8 | Author | P. Corfdir , H. Li , O. Marquardt , G. Gao , M. R. Molas , J. K. Zettler , D. van Treeck , T. Flissikowski , M. Potemski , C. Draxl , A. Trampert , S. Fernández-Garrido , H. T. Grahn , O. Brandt |
Title |
Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces |
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Source | Nano Lett. , 18 , 247 ( 2018 ) | |
DOI : 10.1021/acs.nanolett.7b03997 | Cite : Bibtex RIS |
9 | Author | C. Chèze , F. Feix , J. Lähnemann , T. Flissikowski , M. Krysko , P. Wolny , H. Turski , C. Skierbiszewski , O. Brandt |
Title |
Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C |
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Source | Appl. Phys. Lett. , 112 , 022102 ( 2018 ) | |
DOI : 10.1063/1.5009184 | Download: PDF | Cite : Bibtex RIS |
10 | Author | F. Feix , T. Flissikowski , K. K. Sabelfeld , V. M. Kaganer , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt |
Title |
Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency |
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Source | Phys. Rev. Appl. , 8 , 014032 ( 2017 ) | |
DOI : 10.1103/PhysRevApplied.8.014032 | Download arXiv: 1703.06715 | Cite : Bibtex RIS |