Dr. Timur Flissikowski

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

@article{ author = { F. Feix and T. Flissikowski and C. Chèze and R. Calarco and H. T. Grahn and O. Brandt }, title = { Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN }, journal = { Applied Physics Letters }, volume = { 109 }, year = { 2016 }, pages = { 042104 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - C. Chèze AU - R. Calarco AU - H. T. Grahn AU - O. Brandt TI - Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 109 SP - 042104 PY - 2016/07/28

Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 alloys

@article{ author = { V. Bragaglia and K. Holldack and J. E. Boschker and F. Arciprete and E. Zallo and T. Flissikowski and R. Calarco }, title = { Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 alloys }, journal = { Scientific Reports }, volume = { 6 }, year = { 2016 }, pages = { 28560 } }

TY - JOUR AU - V. Bragaglia AU - K. Holldack AU - J. E. Boschker AU - F. Arciprete AU - E. Zallo AU - T. Flissikowski AU - R. Calarco TI - Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 alloys JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 6 SP - 28560 PY - 2016/06/24

Crystal-phase quantum dots in GaN quantum wires

@article{ author = { P. Corfdir and C. Hauswald and O. Marquardt and T. Flissikowski and J. K. Zettler and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum dots in GaN quantum wires }, journal = { Physical Review B: Solid State }, volume = { 93 }, year = { 2016 }, pages = { 115305 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - O. Marquardt AU - T. Flissikowski AU - J. K. Zettler AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum dots in GaN quantum wires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 93 SP - 115305 PY - 2016/03/10

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

@article{ author = { J. K. Zettler and P. Corfdir and C. Hauswald and E. Luna and U. Jahn and T. Flissikowski and E. Schmidt and C. Ronning and A. Trampert and L. Geelhaar and H. T. Grahn and O. Brandt and S. Fernández-Garrido }, title = { Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 973 } }

TY - JOUR AU - J. K. Zettler AU - P. Corfdir AU - C. Hauswald AU - E. Luna AU - U. Jahn AU - T. Flissikowski AU - E. Schmidt AU - C. Ronning AU - A. Trampert AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - S. Fernández-Garrido TI - Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 973 PY - 2016/02/10

Radial Stark effect in (In,Ga)N nanowires

@article{ author = { J. Lähnemann and P. Corfdir and F. Feix and J. Kamimura and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Radial Stark effect in (In,Ga)N nanowires }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 917 } }

TY - JOUR AU - J. Lähnemann AU - P. Corfdir AU - F. Feix AU - J. Kamimura AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Radial Stark effect in (In,Ga)N nanowires JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 917 PY - 2016/01/20

Coincident-site lattice matching during van der Waals epitaxy

@article{ author = { J. E. Boschker and L. A. Galves and T. Flissikowski and J. M. J. Lopes and H. Riechert and R. Calarco }, title = { Coincident-site lattice matching during van der Waals epitaxy }, journal = { Scientific Reports }, volume = { 5 }, year = { 2015 }, pages = { 18079 } }

TY - JOUR AU - J. E. Boschker AU - L. A. Galves AU - T. Flissikowski AU - J. M. J. Lopes AU - H. Riechert AU - R. Calarco TI - Coincident-site lattice matching during van der Waals epitaxy JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 5 SP - 18079 PY - 2015/12/14

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

@article{ author = { M. Wölz and C. Hauswald and T. Flissikowski and T. Gotschke and S. Fernández-Garrido and O. Brandt and H. T. Grahn and L. Geelhaar and H. Riechert }, title = { Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 3743 } }

TY - JOUR AU - M. Wölz AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - S. Fernández-Garrido AU - O. Brandt AU - H. T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 3743 PY - 2015/05/29

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

@article{ author = { P. Corfdir and C. Hauswald and J. K. Zettler and T. Flissikowski and J. Lähnemann and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 195309 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - J. K. Zettler AU - T. Flissikowski AU - J. Lähnemann AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 90 SP - 195309 PY - 2014/11/18

Origin of the nonradiative decay of bound excitons in GaN nanowires

@article{ author = { C. Hauswald and P. Corfdir and J. K. Zettler and V. M. Kaganer and K. K. Sabelfeld and S. Fernández-Garrido and T. Flissikowski and V. Consonni and T. Gotschke and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Origin of the nonradiative decay of bound excitons in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165304 } }

TY - JOUR AU - C. Hauswald AU - P. Corfdir AU - J. K. Zettler AU - V. M. Kaganer AU - K. K. Sabelfeld AU - S. Fernández-Garrido AU - T. Flissikowski AU - V. Consonni AU - T. Gotschke AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Origin of the nonradiative decay of bound excitons in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 90 SP - 165304 PY - 2014/10/08

Luminescence associated with stacking faults in GaN

@article{ author = { J. Lähnemann and U. Jahn and O. Brandt and T. Flissikowski and P. Dogan and H. T. Grahn }, title = { Luminescence associated with stacking faults in GaN }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 423001 } }

TY - JOUR AU - J. Lähnemann AU - U. Jahn AU - O. Brandt AU - T. Flissikowski AU - P. Dogan AU - H. T. Grahn TI - Luminescence associated with stacking faults in GaN JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 47 SP - 423001 PY - 2014/10/01