Dr. Timur Flissikowski

Radiative and nonradiative decay of excitons in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and L. Geelhaar and H. T. Grahn and H. Riechert and O. Brandt }, title = { Radiative and nonradiative decay of excitons in GaN nanowires }, journal = { Proceedings of SPIE }, volume = { 8986 }, year = { 2014 }, pages = { 89860V } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - L. Geelhaar AU - H. T. Grahn AU - H. Riechert AU - O. Brandt TI - Radiative and nonradiative decay of excitons in GaN nanowires JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 8986 SP - 89860V PY - 2014/03/08

Rate equation model for the time dependence of the reflectance of a Ge₂Te₂Sb₅ film during optical switching processes

@article{ author = { F. Gericke and T. Flissikowski and F. Katmis and W. Braun and H.T. Grahn }, title = { Rate equation model for the time dependence of the reflectance of a Ge₂Te₂Sb₅ film during optical switching processes }, journal = { Journal of Applied Physics }, volume = { 113 }, year = { 2013 }, pages = { 183507 } }

TY - JOUR AU - F. Gericke AU - T. Flissikowski AU - F. Katmis AU - W. Braun AU - H.T. Grahn TI - Rate equation model for the time dependence of the reflectance of a Ge₂Te₂Sb₅ film during optical switching processes JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 113 SP - 183507 PY - 2013/01/01

Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination

@article{ author = { O. Brandt and P. Misra and T. Flissikowski and H.T. Grahn }, title = { Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination }, journal = { Physical Review B: Solid State }, volume = { 87 }, year = { 2013 }, pages = { 165308 } }

TY - JOUR AU - O. Brandt AU - P. Misra AU - T. Flissikowski AU - H.T. Grahn TI - Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 87 SP - 165308 PY - 2013/01/01

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and T. Gotschke and R. Calarco and L. Geelhaar and H.T. Grahn and O. Brandt }, title = { Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 88 }, year = { 2013 }, pages = { 075312 } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - L. Geelhaar AU - H.T. Grahn AU - O. Brandt TI - Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 88 SP - 075312 PY - 2013/01/01

Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films

@article{ author = { F. Gericke and T. Flissikowski and J. Lähnemann and F. Katmis and W. Braun and H. Riechert and H.T. Grahn }, title = { Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 113524 } }

TY - JOUR AU - F. Gericke AU - T. Flissikowski AU - J. Lähnemann AU - F. Katmis AU - W. Braun AU - H. Riechert AU - H.T. Grahn TI - Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 113524 PY - 2012/01/01

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

@article{ author = { A. Gorgis and T. Flissikowski and O. Brandt and C. Chèze and L. Geelhaar and H. Riechert and H.T. Grahn }, title = { Time-resolved photoluminescence spectroscopy of individual GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 041302(R) } }

TY - JOUR AU - A. Gorgis AU - T. Flissikowski AU - O. Brandt AU - C. Chèze AU - L. Geelhaar AU - H. Riechert AU - H.T. Grahn TI - Time-resolved photoluminescence spectroscopy of individual GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 86 SP - 041302(R) PY - 2012/01/01

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

@article{ author = { J. Lähnemann and O. Brandt and C. Pfüller and T. Flissikowski and U. Jahn and E. Luna and M. Hanke and M. Knelangen and A. Trampert and H.T. Grahn }, title = { Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure }, journal = { Physical Review B: Solid State }, volume = { 84 }, year = { 2011 }, pages = { 155303 } }

TY - JOUR AU - J. Lähnemann AU - O. Brandt AU - C. Pfüller AU - T. Flissikowski AU - U. Jahn AU - E. Luna AU - M. Hanke AU - M. Knelangen AU - A. Trampert AU - H.T. Grahn TI - Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 84 SP - 155303 PY - 2011/10/11

Crystallization of amorphous InAs/GaAs films on GaAs

@article{ author = { R. Hey and P. V. Santos and E. Luna and T. Flissikowski and U. Jahn }, title = { Crystallization of amorphous InAs/GaAs films on GaAs }, journal = { Journal of Crystal Growth }, volume = { 323 }, year = { 2011 }, pages = { 5 } }

TY - JOUR AU - R. Hey AU - P. V. Santos AU - E. Luna AU - T. Flissikowski AU - U. Jahn TI - Crystallization of amorphous InAs/GaAs films on GaAs JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 323 SP - 5 PY - 2011/01/01

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

@article{ author = { S. Breuer and C. Pfüller and T. Flissikowski and O. Brandt and H.T. Grahn and L. Geelhaar and H. Riechert }, title = { Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications }, journal = { Nano Letters }, volume = { 11 }, year = { 2011 }, pages = { 1276 } }

TY - JOUR AU - S. Breuer AU - C. Pfüller AU - T. Flissikowski AU - O. Brandt AU - H.T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications JF - Nano Letters JA - Nano Lett. J1 - VL - 11 SP - 1276 PY - 2011/01/01

Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires

@article{ author = { C. Pfüller and O. Brandt and T. Flissikowski and H.T. Grahn and T. Ive and J. S. Speck and S. P. DenBaars }, title = { Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires }, journal = { Applied Physics Letters }, volume = { 98 }, year = { 2011 }, pages = { 113113 } }

TY - JOUR AU - C. Pfüller AU - O. Brandt AU - T. Flissikowski AU - H.T. Grahn AU - T. Ive AU - J. S. Speck AU - S. P. DenBaars TI - Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 98 SP - 113113 PY - 2011/01/01