Dr. Timur Flissikowski

Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film

@article{ author = { M. Wölz and C. Hauswald and T. Flissikowski and T. Gotschke and S. Fernández-Garrido and O. Brandt and H. T. Grahn and L. Geelhaar and H. Riechert }, title = { Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film }, journal = { Nano Letters }, volume = { 15 }, year = { 2015 }, pages = { 3743 } }

TY - JOUR AU - M. Wölz AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - S. Fernández-Garrido AU - O. Brandt AU - H. T. Grahn AU - L. Geelhaar AU - H. Riechert TI - Epitaxial growth of GaN nanowires with high structural perfection on a metallic TiN film JF - Nano Letters JA - Nano Lett. J1 - VL - 15 SP - 3743 PY - 2015/05/29

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

@article{ author = { P. Corfdir and C. Hauswald and J. K. Zettler and T. Flissikowski and J. Lähnemann and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 195309 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - J. K. Zettler AU - T. Flissikowski AU - J. Lähnemann AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 195309 PY - 2014/11/18

Origin of the nonradiative decay of bound excitons in GaN nanowires

@article{ author = { C. Hauswald and P. Corfdir and J. K. Zettler and V. M. Kaganer and K. K. Sabelfeld and S. Fernández-Garrido and T. Flissikowski and V. Consonni and T. Gotschke and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Origin of the nonradiative decay of bound excitons in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165304 } }

TY - JOUR AU - C. Hauswald AU - P. Corfdir AU - J. K. Zettler AU - V. M. Kaganer AU - K. K. Sabelfeld AU - S. Fernández-Garrido AU - T. Flissikowski AU - V. Consonni AU - T. Gotschke AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Origin of the nonradiative decay of bound excitons in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 165304 PY - 2014/10/08

Luminescence associated with stacking faults in GaN

@article{ author = { J. Lähnemann and U. Jahn and O. Brandt and T. Flissikowski and P. Dogan and H. T. Grahn }, title = { Luminescence associated with stacking faults in GaN }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 423001 } }

TY - JOUR AU - J. Lähnemann AU - U. Jahn AU - O. Brandt AU - T. Flissikowski AU - P. Dogan AU - H. T. Grahn TI - Luminescence associated with stacking faults in GaN JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 423001 PY - 2014/10/01

Radiative and nonradiative decay of excitons in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and L. Geelhaar and H. T. Grahn and H. Riechert and O. Brandt }, title = { Radiative and nonradiative decay of excitons in GaN nanowires }, journal = { Proceedings of SPIE }, volume = { 8986 }, year = { 2014 }, pages = { 89860V } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - L. Geelhaar AU - H. T. Grahn AU - H. Riechert AU - O. Brandt TI - Radiative and nonradiative decay of excitons in GaN nanowires JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 8986 SP - 89860V PY - 2014/03/08

Rate equation model for the time dependence of the reflectance of a Ge₂Te₂Sb₅ film during optical switching processes

@article{ author = { F. Gericke and T. Flissikowski and F. Katmis and W. Braun and H.T. Grahn }, title = { Rate equation model for the time dependence of the reflectance of a Ge₂Te₂Sb₅ film during optical switching processes }, journal = { Journal of Applied Physics }, volume = { 113 }, year = { 2013 }, pages = { 183507 } }

TY - JOUR AU - F. Gericke AU - T. Flissikowski AU - F. Katmis AU - W. Braun AU - H.T. Grahn TI - Rate equation model for the time dependence of the reflectance of a Ge₂Te₂Sb₅ film during optical switching processes JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 113 SP - 183507 PY - 2013/01/01

Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination

@article{ author = { O. Brandt and P. Misra and T. Flissikowski and H.T. Grahn }, title = { Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination }, journal = { Physical Review B: Solid State }, volume = { 87 }, year = { 2013 }, pages = { 165308 } }

TY - JOUR AU - O. Brandt AU - P. Misra AU - T. Flissikowski AU - H.T. Grahn TI - Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 87 SP - 165308 PY - 2013/01/01

Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and T. Gotschke and R. Calarco and L. Geelhaar and H.T. Grahn and O. Brandt }, title = { Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 88 }, year = { 2013 }, pages = { 075312 } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - L. Geelhaar AU - H.T. Grahn AU - O. Brandt TI - Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 88 SP - 075312 PY - 2013/01/01

Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films

@article{ author = { F. Gericke and T. Flissikowski and J. Lähnemann and F. Katmis and W. Braun and H. Riechert and H.T. Grahn }, title = { Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films }, journal = { Journal of Applied Physics }, volume = { 111 }, year = { 2012 }, pages = { 113524 } }

TY - JOUR AU - F. Gericke AU - T. Flissikowski AU - J. Lähnemann AU - F. Katmis AU - W. Braun AU - H. Riechert AU - H.T. Grahn TI - Optical switching and related structural properties of epitaxial Ge₂Sb₂Te₅ films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 111 SP - 113524 PY - 2012/01/01

Time-resolved photoluminescence spectroscopy of individual GaN nanowires

@article{ author = { A. Gorgis and T. Flissikowski and O. Brandt and C. Chèze and L. Geelhaar and H. Riechert and H.T. Grahn }, title = { Time-resolved photoluminescence spectroscopy of individual GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 041302(R) } }

TY - JOUR AU - A. Gorgis AU - T. Flissikowski AU - O. Brandt AU - C. Chèze AU - L. Geelhaar AU - H. Riechert AU - H.T. Grahn TI - Time-resolved photoluminescence spectroscopy of individual GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 041302(R) PY - 2012/01/01