Senior Scientist
phone: +49 30 20377 336
room: 0518
email: flissi@pdi-berlin.de
Department: Semiconductor Spectroscopy
Core research areas: Nanoanalytics , III-V nanowires for optoelectronics
21 | Author | C. Hauswald , T. Flissikowski , L. Geelhaar , H. T. Grahn , H. Riechert , O. Brandt |
Title |
Radiative and nonradiative decay of excitons in GaN nanowires |
|
Source | Proc. SPIE , 8986 , 89860V ( 2014 ) | |
DOI : 10.1117/12.2039082 | Download: PDF | Cite : Bibtex RIS |
22 | Author | F. Gericke , T. Flissikowski , F. Katmis , W. Braun , H.T. Grahn |
Title |
Rate equation model for the time dependence of the reflectance of a Ge2Te2Sb5 film during optical switching processes |
|
Source | J. Appl. Phys. , 113 , 183507 ( 2013 ) | |
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23 | Author | O. Brandt , P. Misra , T. Flissikowski , H.T. Grahn |
Title |
Excitation polarization anisotropy of the spontaneous emission from an M-plane GaN film: Competition between hole relaxation and exciton recombination |
|
Source | Phys. Rev. B , 87 , 165308 ( 2013 ) | |
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24 | Author | C. Hauswald , T. Flissikowski , T. Gotschke , R. Calarco , L. Geelhaar , H.T. Grahn , O. Brandt |
Title |
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires |
|
Source | Phys. Rev. B , 88 , 075312 ( 2013 ) | |
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25 | Author | F. Gericke , T. Flissikowski , J. Lähnemann , F. Katmis , W. Braun , H. Riechert , H.T. Grahn |
Title |
Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films |
|
Source | J. Appl. Phys. , 111 , 113524 ( 2012 ) | |
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26 | Author | A. Gorgis , T. Flissikowski , O. Brandt , C. Chèze , L. Geelhaar , H. Riechert , H.T. Grahn |
Title |
Time-resolved photoluminescence spectroscopy of individual GaN nanowires |
|
Source | Phys. Rev. B , 86 , 041302(R) ( 2012 ) | |
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27 | Author | J. Lähnemann , O. Brandt , C. Pfüller , T. Flissikowski , U. Jahn , E. Luna , M. Hanke , M. Knelangen , A. Trampert , H.T. Grahn |
Title |
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure |
|
Source | Phys. Rev. B , 84 , 155303 ( 2011 ) | |
DOI : 10.1103/PhysRevB.84.155303 | Download: PDF | Cite : Bibtex RIS |
28 | Author | R. Hey , P. V. Santos , E. Luna , T. Flissikowski , U. Jahn |
Title |
Crystallization of amorphous InAs/GaAs films on GaAs |
|
Source | J. Cryst. Growth , 323 , 5 ( 2011 ) | |
Bibtex RIS | Cite :
29 | Author | S. Breuer , C. Pfüller , T. Flissikowski , O. Brandt , H.T. Grahn , L. Geelhaar , H. Riechert |
Title |
Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications |
|
Source | Nano Lett. , 11 , 1276 ( 2011 ) | |
Bibtex RIS | Cite :
30 | Author | C. Pfüller , O. Brandt , T. Flissikowski , H.T. Grahn , T. Ive , J. S. Speck , S. P. DenBaars |
Title |
Comparison of the spectral and temporal emission characteristics of homo- and heteroepitaxial ZnO nanowires |
|
Source | Appl. Phys. Lett. , 98 , 113113 ( 2011 ) | |
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