Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers

@article{ author = { J. Kamimura and M. Budde and P. Bogdanoff and C. Tschammer and F. F. Abdi and R. van de Krol and O. Bierwagen and H. Riechert and L. Geelhaar }, title = { Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers }, journal = { Solar RRL }, volume = { 4 }, year = { 2020 }, pages = { 2000568 } }

TY - JOUR AU - J. Kamimura AU - M. Budde AU - P. Bogdanoff AU - C. Tschammer AU - F. F. Abdi AU - R. van de Krol AU - O. Bierwagen AU - H. Riechert AU - L. Geelhaar TI - Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers JF - Solar RRL JA - Sol. RRL J1 - xxx VL - 4 SP - 2000568 PY - 2020/10/21

X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

@article{ author = { A. Davtyan and D. Kriegner and V. Holý and A. AlHassan and R.B. Lewis and S. McDermott and L. Geelhaar and D. Bahrami and T. Anjum and Z. Ren and C. Richter and D. Novikov and J. Müller and B. Butz and U. Pietsch }, title = { X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires }, journal = { Journal of Applied Crystallography }, volume = { 53 }, year = { 2020 }, pages = { 1310 } }

TY - JOUR AU - A. Davtyan AU - D. Kriegner AU - V. Holý AU - A. AlHassan AU - R.B. Lewis AU - S. McDermott AU - L. Geelhaar AU - D. Bahrami AU - T. Anjum AU - Z. Ren AU - C. Richter AU - D. Novikov AU - J. Müller AU - B. Butz AU - U. Pietsch TI - X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 53 SP - 1310 PY - 2020/09/23

Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure

@article{ author = { Y. Zhao and Z. Xing and L. Geelhaar and J. Zhang and W. Yang and T. Auzelle and Y. Wu and L. Bian and S. Lu }, title = { Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 9943 } }

TY - JOUR AU - Y. Zhao AU - Z. Xing AU - L. Geelhaar AU - J. Zhang AU - W. Yang AU - T. Auzelle AU - Y. Wu AU - L. Bian AU - S. Lu TI - Detaching highly flexible and transparent (In,Ga)N nanowire films by a low-cost and stable electrochemical procedure JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 9943 PY - 2020/09/23

Efficient adjustable light couplers of integrated III–V nanowire emitters on silicon waveguides based on ring resonators

@article{ author = { M. Aghaeipour and L. Kasper and J. Herranz and L. Geelhaar and J. Bruns }, title = { Efficient adjustable light couplers of integrated III–V nanowire emitters on silicon waveguides based on ring resonators }, journal = { Optics Letters }, volume = { 45 }, year = { 2020 }, pages = { 4702 } }

TY - JOUR AU - M. Aghaeipour AU - L. Kasper AU - J. Herranz AU - L. Geelhaar AU - J. Bruns TI - Efficient adjustable light couplers of integrated III–V nanowire emitters on silicon waveguides based on ring resonators JF - Optics Letters JA - Opt. Lett. J1 - OpLe VL - 45 SP - 4702 PY - 2020/08/19

Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments

@article{ author = { A. AlHassan and J. Lähnemann and A. Davtyan and M. Al-Humaidi and J. Herranz and D. Bahrami and T. Anjum and F. Bertram and A. B. Dey and L. Geelhaar and U. Pietsch }, title = { Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments }, journal = { Journal of Synchrotron Radiation }, volume = { 27 }, year = { 2020 }, pages = { 1200 } }

TY - JOUR AU - A. AlHassan AU - J. Lähnemann AU - A. Davtyan AU - M. Al-Humaidi AU - J. Herranz AU - D. Bahrami AU - T. Anjum AU - F. Bertram AU - A. B. Dey AU - L. Geelhaar AU - U. Pietsch TI - Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments JF - Journal of Synchrotron Radiation JA - J. Synchrotron Rad. J1 - JSR VL - 27 SP - 1200 PY - 2020/08/13

Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

@article{ author = { G. Calabrese and D. van Treeck and V. M. Kaganer and O. Konovalov and P. Corfdir and C. Sinito and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires }, journal = { Acta Materialia }, volume = { 195 }, year = { 2020 }, pages = { 87 } }

TY - JOUR AU - G. Calabrese AU - D. van Treeck AU - V. M. Kaganer AU - O. Konovalov AU - P. Corfdir AU - C. Sinito AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires JF - Acta Materialia JA - Acta Mat. J1 - VL - 195 SP - 87 PY - 2020/05/15

Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry

@article{ author = { A. AlHassan and J. Lähnemann and S. Leake and H. Küpers and M. Niehle and D. Bahrami and F. Bertram and R. B. Lewis and A. Davtyan and T. U. Schülli and L. Geelhaar and U. Pietsch }, title = { Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry }, journal = { Nanotechnology }, volume = { 31 }, year = { 2020 }, pages = { 214002 } }

TY - JOUR AU - A. AlHassan AU - J. Lähnemann AU - S. Leake AU - H. Küpers AU - M. Niehle AU - D. Bahrami AU - F. Bertram AU - R. B. Lewis AU - A. Davtyan AU - T. U. Schülli AU - L. Geelhaar AU - U. Pietsch TI - Spatially-resolved luminescence and crystal structure of single core-shell nanowires measured in the as-grown geometry JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 31 SP - 214002 PY - 2020/03/10

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

@article{ author = { D. van Treeck and S. Fernández-Garrido and L. Geelhaar }, title = { Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 013404 } }

TY - JOUR AU - D. van Treeck AU - S. Fernández-Garrido AU - L. Geelhaar TI - Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 013404 PY - 2020/01/27

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24