Negative differential conductance and current bistability in undoped GaAs/(Al,Ga)As quantum-cascade structures

@article{ author = { S. L. Lu and L. Schrottke and R. Hey and H. Kostial and H.T. Grahn }, title = { Negative differential conductance and current bistability in undoped GaAs/(Al,Ga)As quantum-cascade structures }, journal = { Journal of Applied Physics }, volume = { 97 }, year = { 2005 }, pages = { 024511 } }

TY - JOUR AU - S. L. Lu AU - L. Schrottke AU - R. Hey AU - H. Kostial AU - H.T. Grahn TI - Negative differential conductance and current bistability in undoped GaAs/(Al,Ga)As quantum-cascade structures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 97 SP - 024511 PY - 2005/01/01

Population inversion and threshold current densities: A comparison of GaAs/(Al,Ga)As quantum-cascade structures with different barrier heights

@article{ author = { L. Schrottke and S. L. Lu and R. Hey and M. Giehler and H. Kostial and H.T. Grahn }, title = { Population inversion and threshold current densities: A comparison of GaAs/(Al,Ga)As quantum-cascade structures with different barrier heights }, journal = { Journal of Applied Physics }, volume = { 97 }, year = { 2005 }, pages = { 123104 } }

TY - JOUR AU - L. Schrottke AU - S. L. Lu AU - R. Hey AU - M. Giehler AU - H. Kostial AU - H.T. Grahn TI - Population inversion and threshold current densities: A comparison of GaAs/(Al,Ga)As quantum-cascade structures with different barrier heights JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 97 SP - 123104 PY - 2005/01/01

Strong photoluminescence emission from an excited-subband exciton state in a GaAs/Al_xGa_1-xAs triple quantum well with different well thicknesses

@article{ author = { A. Satake and N. Shiraishi and N. Takata and K. Fujiwara and L. Schrottke and H.T. Grahn }, title = { Strong photoluminescence emission from an excited-subband exciton state in a GaAs/Al_xGa_1-xAs triple quantum well with different well thicknesses }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 21 }, year = { 2004 }, pages = { 641 } }

TY - JOUR AU - A. Satake AU - N. Shiraishi AU - N. Takata AU - K. Fujiwara AU - L. Schrottke AU - H.T. Grahn TI - Strong photoluminescence emission from an excited-subband exciton state in a GaAs/Al_xGa_1-xAs triple quantum well with different well thicknesses JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 21 SP - 641 PY - 2004/01/01

Subband population and current instabilities in GaAs/(Al,Ga)As quantum-cascade structures

@article{ author = { L. Schrottke and R. Hey and H. Kostial and T. Ohtsuka and H.T. Grahn }, title = { Subband population and current instabilities in GaAs/(Al,Ga)As quantum-cascade structures }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 21 }, year = { 2004 }, pages = { 852 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H. Kostial AU - T. Ohtsuka AU - H.T. Grahn TI - Subband population and current instabilities in GaAs/(Al,Ga)As quantum-cascade structures JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 21 SP - 852 PY - 2004/01/01

Electric-field-dependent subband population in undoped GaAs/(Al,Ga)A quantum-cascade structures

@article{ author = { L. Schrottke and T. Ohtsuka and R. Hey and H. Kostial and H.T. Grahn }, title = { Electric-field-dependent subband population in undoped GaAs/(Al,Ga)A quantum-cascade structures }, journal = { Semiconductor Science and Technology }, volume = { 19 }, year = { 2004 }, pages = { 421 } }

TY - JOUR AU - L. Schrottke AU - T. Ohtsuka AU - R. Hey AU - H. Kostial AU - H.T. Grahn TI - Electric-field-dependent subband population in undoped GaAs/(Al,Ga)A quantum-cascade structures JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 19 SP - 421 PY - 2004/01/01

Direct observation of laser level occupation and injector coupling in undoped GaAs/(Al,Ga)As quantum-cascade structures

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Direct observation of laser level occupation and injector coupling in undoped GaAs/(Al,Ga)As quantum-cascade structures }, journal = { Applied Physics Letters }, volume = { 84 }, year = { 2004 }, pages = { 4535 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Direct observation of laser level occupation and injector coupling in undoped GaAs/(Al,Ga)As quantum-cascade structures JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 84 SP - 4535 PY - 2004/01/01

Optical properties and carrier dynamics of InP quantum dots embedded in GaP

@article{ author = { F. Hatami and L. Schrottke and J. W. Tomm and V. Talalaev and C. Kristukat and A. R. Goni and W. T. Masselink }, title = { Optical properties and carrier dynamics of InP quantum dots embedded in GaP }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 5352 }, year = { 2004 }, pages = { 77 } }

TY - JOUR AU - F. Hatami AU - L. Schrottke AU - J. W. Tomm AU - V. Talalaev AU - C. Kristukat AU - A. R. Goni AU - W. T. Masselink TI - Optical properties and carrier dynamics of InP quantum dots embedded in GaP JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 5352 SP - 77 PY - 2004/01/01

Lasing properties of GaAs/(Al,Ga)As quantum cascade lasers as a function of injector doping density

@article{ author = { M. Giehler and R. Hey and H. Kostial and T. Ohtsuka and L. Schrottke and H.T. Grahn }, title = { Lasing properties of GaAs/(Al,Ga)As quantum cascade lasers as a function of injector doping density }, journal = { Proceedings of the 29th International Symposium on Compound Semiconductors 2002; edited by M. Ilegems, G. Weimann, and J. Wagner, IOP Conf. Ser. }, volume = { 174 }, year = { 2003 }, pages = { 459 } }

TY - JOUR AU - M. Giehler AU - R. Hey AU - H. Kostial AU - T. Ohtsuka AU - L. Schrottke AU - H.T. Grahn TI - Lasing properties of GaAs/(Al,Ga)As quantum cascade lasers as a function of injector doping density JF - Proceedings of the 29th International Symposium on Compound Semiconductors 2002; edited by M. Ilegems, G. Weimann, and J. Wagner, IOP Conf. Ser. JA - Proc. ISCS 29 J1 - VL - 174 SP - 459 PY - 2003/01/01

Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density

@article{ author = { M. Giehler and R. Hey and H. Kostial and S. Cronenberg and T. Ohtsuka and L. Schrottke and H.T. Grahn }, title = { Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density }, journal = { Applied Physics Letters }, volume = { 82 }, year = { 2003 }, pages = { 671 } }

TY - JOUR AU - M. Giehler AU - R. Hey AU - H. Kostial AU - S. Cronenberg AU - T. Ohtsuka AU - L. Schrottke AU - H.T. Grahn TI - Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 82 SP - 671 PY - 2003/01/01

InP quantum dots embedded in GaP: Optical properties and carrier dynamics

@article{ author = { F. Hatami and W. T. Masselink and L. Schrottke and J. W. Tomm and V. Talalaev and C. Kristukat and A. R. Goni }, title = { InP quantum dots embedded in GaP: Optical properties and carrier dynamics }, journal = { Physical Review B: Solid State }, volume = { 67 }, year = { 2003 }, pages = { 085306 } }

TY - JOUR AU - F. Hatami AU - W. T. Masselink AU - L. Schrottke AU - J. W. Tomm AU - V. Talalaev AU - C. Kristukat AU - A. R. Goni TI - InP quantum dots embedded in GaP: Optical properties and carrier dynamics JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 67 SP - 085306 PY - 2003/01/01