Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells

@article{ author = { H. Küpers and P. Corfdir and R. B. Lewis and T. Flissikowski and A. Tahraoui and H. T. Grahn and O. Brandt and L. Geelhaar }, title = { Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 13 }, year = { 2019 }, pages = { 1800527 } }

TY - JOUR AU - H. Küpers AU - P. Corfdir AU - R. B. Lewis AU - T. Flissikowski AU - A. Tahraoui AU - H. T. Grahn AU - O. Brandt AU - L. Geelhaar TI - Impact of outer shell structure and localization effects on charge carrier dynamics in GaAs/(In,Ga)As nanowire core-shell quantum wells JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 13 SP - 1800527 PY - 2019/02/07

Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures

@article{ author = { R. B. Lewis and P. Corfdir and H. Küpers and T. Flissikowski and O. Brandt and L. Geelhaar }, title = { Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2343 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Küpers AU - T. Flissikowski AU - O. Brandt AU - L. Geelhaar TI - Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2343 PY - 2018/03/23

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. van Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. van Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

@article{ author = { C. Chèze and F. Feix and J. Lähnemann and T. Flissikowski and M. Krysko and P. Wolny and H. Turski and C. Skierbiszewski and O. Brandt }, title = { Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 022102 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - J. Lähnemann AU - T. Flissikowski AU - M. Krysko AU - P. Wolny AU - H. Turski AU - C. Skierbiszewski AU - O. Brandt TI - Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 022102 PY - 2018/01/08

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 014032 PY - 2017/07/27

Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters

@article{ author = { C. Hauswald and I. Giuntoni and T. Flissikowski and T. Gotschke and R. Calarco and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 52 } }

TY - JOUR AU - C. Hauswald AU - I. Giuntoni AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 52 PY - 2017/01/19

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

@article{ author = { C. Pfüller and P. Corfdir and C. Hauswald and T. Flissikowski and X. Kong and J. K. Zettler and S. Fernández-Garrido and P. Dogan and H. T. Grahn and A. Trampert and L. Geelhaar and O. Brandt }, title = { Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155308 } }

TY - JOUR AU - C. Pfüller AU - P. Corfdir AU - C. Hauswald AU - T. Flissikowski AU - X. Kong AU - J. K. Zettler AU - S. Fernández-Garrido AU - P. Dogan AU - H. T. Grahn AU - A. Trampert AU - L. Geelhaar AU - O. Brandt TI - Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155308 PY - 2016/10/17

Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots

@article{ author = { P. Corfdir and H. Küpers and R. B. Lewis and T. Flissikowski and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots }, journal = { Physical Review B: Solid State }, volume = { 94 }, year = { 2016 }, pages = { 155413 } }

TY - JOUR AU - P. Corfdir AU - H. Küpers AU - R. B. Lewis AU - T. Flissikowski AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Exciton dynamics in GaAs(Al,Ga)As core-shell nanowires with shell quantum dots JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 94 SP - 155413 PY - 2016/10/11

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime

@article{ author = { J. Lähnemann and T. Flissikowski and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt and U. Jahn }, title = { Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 455706 } }

TY - JOUR AU - J. Lähnemann AU - T. Flissikowski AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt AU - U. Jahn TI - Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: Impact of C adsorption on the exciton lifetime JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 455706 PY - 2016/10/07