III-V Nanowires for Optoelectronics

Applications

In general, our research relates to applications based on either light emission or light absorption, e.g. optical data transmission or energy harvesting. Since the nanowire geometry facilitates the integration of dissimilar materials, substrates with attractive properties can be employed that were excluded for planar growth. Furthermore, the spectral region of optoelectronic devices can be widened. Also, radial nanowire heterostructures drastically increase the size of the active region, which is associated with stronger light emission and absorption. In addition, light-matter interaction can be tailored by design of nanowire dimensions and their arrangement in arrays.

Currently, we work towards a laser monolithically integrated on Si. Such a laser is of strategic relevance for the application field Si photonics. Our concept will provide the direct coupling of light between arrays of vertical III-V nanowires and planar Si waveguides. This project MILAS is funded by the Federal Ministry of Education and Research, and our partner is Technical University of Berlin.

Selected Publications

4	Author	J. Herranz , P. Corfdir , E. Luna , U. Jahn , R. B. Lewis , L. Schrottke , J. Lähnemann , A. Tahraoui , A. Trampert , O. Brandt , L. Geelhaar
	Title	Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
	Source	ACS Appl. Nano Mater. , 3 , 165 ( 2020 )
DOI : 10.1021/acsanm.9b01866 \| Download arXiv: 1908.10134 \| 3132 Cite : Bibtex RIS @article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } } J. Herranz, P. Corfdir, E. Luna, U. Jahn, R. B. Lewis, L. Schrottke, J. Lähnemann, A. Tahraoui, A. Trampert, O. Brandt, and L. Geelhaar TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

3	Author	M. Musolino , A. Tahraoui , L. Geelhaar , F. Sacconi , F. Panetta , C. De Santi , M. Meneghini , E. Zanoni
	Title	The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
	Source	Phys. Rev. Applied , 7 , 044014 ( 2017 )
DOI : 10.1103/PhysRevApplied.7.044014 \| Download arXiv: 1704.01569 \| 2888 Cite : Bibtex RIS @article{ author = { M. Musolino and A. Tahraoui and L. Geelhaar and F. Sacconi and F. Panetta and C. De Santi and M. Meneghini and E. Zanoni }, title = { The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires }, journal = { Physical Review Applied }, volume = { 7 }, year = { 2017 }, pages = { 044014 } } M. Musolino, A. Tahraoui, L. Geelhaar, F. Sacconi, F. Panetta, C. De Santi, M. Meneghini, and E. Zanoni TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - L. Geelhaar AU - F. Sacconi AU - F. Panetta AU - C. De Santi AU - M. Meneghini AU - E. Zanoni TI - The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires JF - Physical Review Applied JA - Phys. Rev. Applied J1 - VL - 7 SP - 044014 PY - 2017/04/19

2	Author	J. Kamimura , P. Bogdanoff , P. Corfdir , O. Brandt , H. Riechert , L. Geelhaar
	Title	Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect
	Source	ACS Appl. Mater. Interfaces , 8 , 34490 ( 2016 )
DOI : 10.1021/acsami.6b12874 \| 2834 Cite : Bibtex RIS @article{ author = { J. Kamimura and P. Bogdanoff and P. Corfdir and O. Brandt and H. Riechert and L. Geelhaar }, title = { Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect }, journal = { ACS Applied Materials and Interfaces }, volume = { 8 }, year = { 2016 }, pages = { 34490 } } J. Kamimura, P. Bogdanoff, P. Corfdir, O. Brandt, H. Riechert, and L. Geelhaar TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - P. Corfdir AU - O. Brandt AU - H. Riechert AU - L. Geelhaar TI - Broad-band light absorption and high photocurrent of (In,Ga)N nanowire photoanodes resulting from a radial Stark effect JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 8 SP - 34490 PY - 2016/11/30

1	Author	C. Hauswald , I. Giuntoni , T. Flissikowski , T. Gotschke , R. Calarco , H. T. Grahn , L. Geelhaar , O. Brandt
	Title	Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters
	Source	ACS Photonics , 4 , 52 ( 2017 )
DOI : 10.1021/acsphotonics.6b00551 \| 2823 Cite : Bibtex RIS @article{ author = { C. Hauswald and I. Giuntoni and T. Flissikowski and T. Gotschke and R. Calarco and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters }, journal = { ACS Photonics }, volume = { 4 }, year = { 2017 }, pages = { 52 } } C. Hauswald, I. Giuntoni, T. Flissikowski, T. Gotschke, R. Calarco, H. T. Grahn, L. Geelhaar, and O. Brandt TY - JOUR AU - C. Hauswald AU - I. Giuntoni AU - T. Flissikowski AU - T. Gotschke AU - R. Calarco AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Luminous efficiency of ordered arrays of GaN nanowires with sub-wavelength diameters JF - ACS Photonics JA - ACS Photonics J1 - VL - 4 SP - 52 PY - 2017/01/19