Controllable bifurcation processes in undoped, photoexcited GaAs/AlAs superlattices

@article{ author = { K. J. Luo and S. W. Teitsworth and M. Rogozia and H.T. Grahn and L. L. Bonilla and J. Galan and N. Ohtani }, title = { Controllable bifurcation processes in undoped, photoexcited GaAs/AlAs superlattices }, journal = { Proceedings of the 5th Experimental Chaos Conference; edited by M. Ding, W. L. Ditto, L. M. Pecora, and M. L. Spano (World Scientific, Singapore, 2001) }, volume = { }, year = { 2001 }, pages = { 37 } }

TY - JOUR AU - K. J. Luo AU - S. W. Teitsworth AU - M. Rogozia AU - H.T. Grahn AU - L. L. Bonilla AU - J. Galan AU - N. Ohtani TI - Controllable bifurcation processes in undoped, photoexcited GaAs/AlAs superlattices JF - Proceedings of the 5th Experimental Chaos Conference; edited by M. Ding, W. L. Ditto, L. M. Pecora, and M. L. Spano (World Scientific, Singapore, 2001) JA - Proc. ECC 5 J1 - - VL - SP - 37 PY - 2001/01/01

Photocurrent self-oscillations in weakly coupled, type-II GaAs/AlAs superlattices embedded in p-i-n and n-i-n diodes

@article{ author = { N. Ohtani and M. Rogozia and C. Domoto and T. Nishimura and H.T. Grahn }, title = { Photocurrent self-oscillations in weakly coupled, type-II GaAs/AlAs superlattices embedded in p-i-n and n-i-n diodes }, journal = { Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) }, volume = { }, year = { 2001 }, pages = { 839 } }

TY - JOUR AU - N. Ohtani AU - M. Rogozia AU - C. Domoto AU - T. Nishimura AU - H.T. Grahn TI - Photocurrent self-oscillations in weakly coupled, type-II GaAs/AlAs superlattices embedded in p-i-n and n-i-n diodes JF - Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) JA - Proc. ICPS 25 J1 - VL - SP - 839 PY - 2001/01/01

Escape time model for current self-oscillation frequencies in weakly coupled semiconductor superlattices

@article{ author = { M. Rogozia and H.T. Grahn }, title = { Escape time model for current self-oscillation frequencies in weakly coupled semiconductor superlattices }, journal = { Applied Physics A: Materials Science & Processing }, volume = { 73 }, year = { 2001 }, pages = { 459 } }

TY - JOUR AU - M. Rogozia AU - H.T. Grahn TI - Escape time model for current self-oscillation frequencies in weakly coupled semiconductor superlattices JF - Applied Physics A: Materials Science & Processing JA - Appl. Phys. A: Mater. Sci. Process. J1 - APA VL - 73 SP - 459 PY - 2001/01/01

Current self-oscillations with discrete frequencies in weakly coupled semiconductor superlattices

@article{ author = { M. Rogozia and H.T. Grahn and R. Hey }, title = { Current self-oscillations with discrete frequencies in weakly coupled semiconductor superlattices }, journal = { Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) }, volume = { }, year = { 2001 }, pages = { 853 } }

TY - JOUR AU - M. Rogozia AU - H.T. Grahn AU - R. Hey TI - Current self-oscillations with discrete frequencies in weakly coupled semiconductor superlattices JF - Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) JA - Proc. ICPS 25 J1 - VL - SP - 853 PY - 2001/01/01

Statistics of the domain-boundary relocation time in semiconductor superlattices

@article{ author = { M. Rogozia and S. W. Teitsworth and H.T. Grahn and K. H. Ploog }, title = { Statistics of the domain-boundary relocation time in semiconductor superlattices }, journal = { Physical Review B: Solid State }, volume = { 64 }, year = { 2001 }, pages = { 041308(R) } }

TY - JOUR AU - M. Rogozia AU - S. W. Teitsworth AU - H.T. Grahn AU - K. H. Ploog TI - Statistics of the domain-boundary relocation time in semiconductor superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 64 SP - 041308(R) PY - 2001/01/01

Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors

@article{ author = { M. Rogozia and P. Krispin and H.T. Grahn }, title = { Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors }, journal = { Journal of Applied Physics }, volume = { 90 }, year = { 2001 }, pages = { 4560 } }

TY - JOUR AU - M. Rogozia AU - P. Krispin AU - H.T. Grahn TI - Giant resistance changes in (Al,Ga)As contact layers of GaAs/AlAs superlattices due to deep donors JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 90 SP - 4560 PY - 2001/01/01

Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice }, journal = { Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) }, volume = { }, year = { 2001 }, pages = { 635 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice JF - Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) JA - Proc. ICPS 25 J1 - VL - SP - 635 PY - 2001/01/01

Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy }, journal = { Applied Physics Letters }, volume = { 79 }, year = { 2001 }, pages = { 629 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 79 SP - 629 PY - 2001/01/01

M-plane GaN(1|100) grown on γ-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields

@article{ author = { P. Waltereit and O. Brandt and M. Ramsteiner and A. Trampert and H.T. Grahn and J. Menniger and M. Reiche and K. H. Ploog }, title = { M-plane GaN(1|100) grown on <span class="math"><em>γ</em></span>-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields }, journal = { Journal of Crystal Growth }, volume = { 227/228 }, year = { 2001 }, pages = { 437 } }

TY - JOUR AU - P. Waltereit AU - O. Brandt AU - M. Ramsteiner AU - A. Trampert AU - H.T. Grahn AU - J. Menniger AU - M. Reiche AU - K. H. Ploog TI - M-plane GaN(1|100) grown on <span class="math"><em>γ</em></span>-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 227/228 SP - 437 PY - 2001/01/01

Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy

@article{ author = { U. Behn and A. Thamm and O. Brandt and H.T. Grahn }, title = { Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy }, journal = { Journal of Applied Physics }, volume = { 87 }, year = { 2000 }, pages = { 4315 } }

TY - JOUR AU - U. Behn AU - A. Thamm AU - O. Brandt AU - H.T. Grahn TI - Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 87 SP - 4315 PY - 2000/01/01