Temperature dependence of the photoreflectance lineshape for GaN films grown by molecular beam epitaxy

@article{ author = { U. Behn and A. Thamm and O. Brandt and H.T. Grahn }, title = { Temperature dependence of the photoreflectance lineshape for GaN films grown by molecular beam epitaxy }, journal = { Physica Status Solidi A }, volume = { 180 }, year = { 2000 }, pages = { 381 } }

TY - JOUR AU - U. Behn AU - A. Thamm AU - O. Brandt AU - H.T. Grahn TI - Temperature dependence of the photoreflectance lineshape for GaN films grown by molecular beam epitaxy JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 180 SP - 381 PY - 2000/01/01

Competitive capture dynamics of photogenerated carriers in a GaAs/Al_0.17Ga_0.83As triple quantum well with different well thicknesses

@article{ author = { K. Fujiwara and M. Ohe and M. Matsuo and T. Nogami and H.T. Grahn and K. H. Ploog }, title = { Competitive capture dynamics of photogenerated carriers in a GaAs/Al_0.17Ga_0.83As triple quantum well with different well thicknesses }, journal = { Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. }, volume = { 166 }, year = { 2000 }, pages = { 103 } }

TY - JOUR AU - K. Fujiwara AU - M. Ohe AU - M. Matsuo AU - T. Nogami AU - H.T. Grahn AU - K. H. Ploog TI - Competitive capture dynamics of photogenerated carriers in a GaAs/Al_0.17Ga_0.83As triple quantum well with different well thicknesses JF - Proceedings of the 26th International Symposium on Compound Semiconductors; edited by K. H. Ploog, G. Tränkle, and G. Weimann, IOP Conf. Ser. JA - Proc. ISCS 26 J1 - VL - 166 SP - 103 PY - 2000/01/01

Current self-oscillations and chaos in semiconductor superlattices

@article{ author = { H.T. Grahn }, title = { Current self-oscillations and chaos in semiconductor superlattices }, journal = { Statistical and Dynamical Aspects of Mesoscopic Systems, Proceedings of the XVI Sitges Conference on Statistical Mechanics; edited by D. Reguera, G. Platero, L. L. Bonilla, and J. M. Rubi (Springer-Verlag, Berlin, 2000) }, volume = { }, year = { 2000 }, pages = { 193 } }

TY - JOUR AU - H.T. Grahn TI - Current self-oscillations and chaos in semiconductor superlattices JF - Statistical and Dynamical Aspects of Mesoscopic Systems, Proceedings of the XVI Sitges Conference on Statistical Mechanics; edited by D. Reguera, G. Platero, L. L. Bonilla, and J. M. Rubi (Springer-Verlag, Berlin, 2000) JA - Proc. SCSM 16 J1 - VL - SP - 193 PY - 2000/01/01

Influence of internal electric fields on the carrier dynamics in GaN/(Al,Ga)N multiple quantum wells with different orientation and strain state

@article{ author = { H.T. Grahn and A. Thamm and P. Waltereit and O. Brandt and K. H. Ploog }, title = { Influence of internal electric fields on the carrier dynamics in GaN/(Al,Ga)N multiple quantum wells with different orientation and strain state }, journal = { Proceedings of the International Workshop on Nitride Semiconductors -- IWN 2000 --; (IPAP, Tokyo, 2000) }, volume = { }, year = { 2000 }, pages = { 520 } }

TY - JOUR AU - H.T. Grahn AU - A. Thamm AU - P. Waltereit AU - O. Brandt AU - K. H. Ploog TI - Influence of internal electric fields on the carrier dynamics in GaN/(Al,Ga)N multiple quantum wells with different orientation and strain state JF - Proceedings of the International Workshop on Nitride Semiconductors -- IWN 2000 --; (IPAP, Tokyo, 2000) JA - Proc. IWN 2000 J1 - VL - SP - 520 PY - 2000/01/01

Surfaces and interfaces of (Al,Ga)As heterostructures on unpatterned and patterned GaAs substrates

@article{ author = { U. Jahn and R. Nötzel and R. Hey and H.T. Grahn and K. H. Ploog }, title = { Surfaces and interfaces of (Al,Ga)As heterostructures on unpatterned and patterned GaAs substrates }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 39 }, year = { 2000 }, pages = { 4512 } }

TY - JOUR AU - U. Jahn AU - R. Nötzel AU - R. Hey AU - H.T. Grahn AU - K. H. Ploog TI - Surfaces and interfaces of (Al,Ga)As heterostructures on unpatterned and patterned GaAs substrates JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 39 SP - 4512 PY - 2000/01/01

Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition

@article{ author = { S. R. Jin and M. Ramsteiner and H.T. Grahn and K. H. Ploog and Z. Q. Zhu and D. X. Shen and A. Z. Li and P. Metev and L. J. Guido }, title = { Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition }, journal = { Journal of Crystal Growth }, volume = { 212 }, year = { 2000 }, pages = { 56 } }

TY - JOUR AU - S. R. Jin AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog AU - Z. Q. Zhu AU - D. X. Shen AU - A. Z. Li AU - P. Metev AU - L. J. Guido TI - Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 212 SP - 56 PY - 2000/01/01

Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures

@article{ author = { S. R. Jin and M. Ramsteiner and H.T. Grahn and K. H. Ploog and Z. H. Li and D. X. Shen and Z. Q. Zhu }, title = { Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures }, journal = { Journal of Applied Physics }, volume = { 88 }, year = { 2000 }, pages = { 4075 } }

TY - JOUR AU - S. R. Jin AU - M. Ramsteiner AU - H.T. Grahn AU - K. H. Ploog AU - Z. H. Li AU - D. X. Shen AU - Z. Q. Zhu TI - Fundamental relationship of excitonic photoluminescence intensity with excitation density in semiconductor quantum well structures JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 88 SP - 4075 PY - 2000/01/01

Time-resolved studies of exciton recombination in direct-gap GaAs/AlAs superlattices

@article{ author = { V. G. Litovchenko and D. V. Korbutyak and S. G. Krylyuk and H.T. Grahn and K. H. Ploog }, title = { Time-resolved studies of exciton recombination in direct-gap GaAs/AlAs superlattices }, journal = { Proceedings of the 8th International Symposium on Nanostructures: Physics and Technology; edited by Zh. Alferov and L. Esaki (Ioffe Institute, St. Petersburg, 2000) }, volume = { }, year = { 2000 }, pages = { 272 } }

TY - JOUR AU - V. G. Litovchenko AU - D. V. Korbutyak AU - S. G. Krylyuk AU - H.T. Grahn AU - K. H. Ploog TI - Time-resolved studies of exciton recombination in direct-gap GaAs/AlAs superlattices JF - Proceedings of the 8th International Symposium on Nanostructures: Physics and Technology; edited by Zh. Alferov and L. Esaki (Ioffe Institute, St. Petersburg, 2000) JA - Proc. ISNPT 8 J1 - VL - SP - 272 PY - 2000/01/01

Magnetic-field effects on undriven chaos in a weakly coupled GaAs/AlAs superlattice

@article{ author = { K. J. Luo and K.-J. Friedland and H.T. Grahn and K. H. Ploog }, title = { Magnetic-field effects on undriven chaos in a weakly coupled GaAs/AlAs superlattice }, journal = { Applied Physics Letters }, volume = { 76 }, year = { 2000 }, pages = { 2913 } }

TY - JOUR AU - K. J. Luo AU - K.-J. Friedland AU - H.T. Grahn AU - K. H. Ploog TI - Magnetic-field effects on undriven chaos in a weakly coupled GaAs/AlAs superlattice JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 76 SP - 2913 PY - 2000/01/01

Magneto-transport investigations of structural irregularities in a weakly coupled GaAs/AlAs superlattice under domain formation

@article{ author = { K. J. Luo and K.-J. Friedland and H.T. Grahn and K. H. Ploog }, title = { Magneto-transport investigations of structural irregularities in a weakly coupled GaAs/AlAs superlattice under domain formation }, journal = { Physical Review B: Solid State }, volume = { 61 }, year = { 2000 }, pages = { 4477 } }

TY - JOUR AU - K. J. Luo AU - K.-J. Friedland AU - H.T. Grahn AU - K. H. Ploog TI - Magneto-transport investigations of structural irregularities in a weakly coupled GaAs/AlAs superlattice under domain formation JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 61 SP - 4477 PY - 2000/01/01