Electric-field induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Electric-field induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice }, journal = { Physical Review B: Solid State }, volume = { 60 }, year = { 1999 }, pages = { 16635 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Electric-field induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 60 SP - 16635 PY - 1999/01/01

Excitonic properties of weakly coupled GaAs single quantum wells with growth islands

@article{ author = { L. Schrottke and J. Ringling and R. Hey and H.T. Grahn and K. Fujiwara }, title = { Excitonic properties of weakly coupled GaAs single quantum wells with growth islands }, journal = { Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) }, volume = { }, year = { 1999 }, pages = { IV-D-33 (0433.pdf) } }

TY - JOUR AU - L. Schrottke AU - J. Ringling AU - R. Hey AU - H.T. Grahn AU - K. Fujiwara TI - Excitonic properties of weakly coupled GaAs single quantum wells with growth islands JF - Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) JA - Proc. ICPS 24 J1 - - VL - SP - IV-D-33 (0433.pdf) PY - 1999/01/01

Influence of carrier-carrier scattering on intraband dephasing

@article{ author = { F. Wolter and R. Martini and S. Tolk and P. Haring-Bolivar and H. Kurz and R. Hey and H.T. Grahn }, title = { Influence of carrier-carrier scattering on intraband dephasing }, journal = { Superlattices and Microstructures }, volume = { 26 }, year = { 1999 }, pages = { 93 } }

TY - JOUR AU - F. Wolter AU - R. Martini AU - S. Tolk AU - P. Haring-Bolivar AU - H. Kurz AU - R. Hey AU - H.T. Grahn TI - Influence of carrier-carrier scattering on intraband dephasing JF - Superlattices and Microstructures JA - Superlattices Microstruct. J1 - SuMi VL - 26 SP - 93 PY - 1999/01/01

Impact of exciton diffusion on the optical properties of thin GaN layers

@article{ author = { O. Brandt and B. Yang and H.-J. Wünsche and U. Jahn and J. Ringling and G. Paris and H.T. Grahn and K. H. Ploog }, title = { Impact of exciton diffusion on the optical properties of thin GaN layers }, journal = { Physical Review B: Solid State }, volume = { 58 }, year = { 1998 }, pages = { R13407 } }

TY - JOUR AU - O. Brandt AU - B. Yang AU - H.-J. Wünsche AU - U. Jahn AU - J. Ringling AU - G. Paris AU - H.T. Grahn AU - K. H. Ploog TI - Impact of exciton diffusion on the optical properties of thin GaN layers JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 58 SP - R13407 PY - 1998/01/01

Hot electrons and space charge waves in superlattices

@article{ author = { H.T. Grahn }, title = { Hot electrons and space charge waves in superlattices }, journal = { Hot Electrons in Semiconductors: Physics and Devices; edited by N. Balkan (Clarendon Press, Oxford, 1998) }, volume = { }, year = { 1998 }, pages = { 357 } }

TY - JOUR AU - H.T. Grahn TI - Hot electrons and space charge waves in superlattices JF - Hot Electrons in Semiconductors: Physics and Devices; edited by N. Balkan (Clarendon Press, Oxford, 1998) JA - HESPD J1 - - VL - SP - 357 PY - 1998/01/01

Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001)

@article{ author = { H.T. Grahn and J. Ringling and O. Brandt and B. Yang and K. Ploog and J. Off and F. Scholz }, title = { Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001) }, journal = { Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) }, volume = { }, year = { 1998 }, pages = { 202 } }

TY - JOUR AU - H.T. Grahn AU - J. Ringling AU - O. Brandt AU - B. Yang AU - K. Ploog AU - J. Off AU - F. Scholz TI - Temperature dependence of the photoluminescence decay time in thin GaN layers on 6H-SiC(0001) JF - Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 1998); edited by K. Onabe, K. Hiramatsu, K. Itaya, and Y. Nakano (Ohmsha, Ltd., Tokyo, 1998) JA - Proc. ISBLLED 1998 J1 - - VL - SP - 202 PY - 1998/01/01

Correlation of cathodoluminescence and EBIC contrast in GaAs/Al_xGa_1-xAs quantum well structures

@article{ author = { U. Jahn and R. Hey and H. Kostial and H.T. Grahn }, title = { Correlation of cathodoluminescence and EBIC contrast in GaAs/Al_xGa_1-xAs quantum well structures }, journal = { Solid State Phenomena }, volume = { 63/64 }, year = { 1998 }, pages = { 473 } }

TY - JOUR AU - U. Jahn AU - R. Hey AU - H. Kostial AU - H.T. Grahn TI - Correlation of cathodoluminescence and EBIC contrast in GaAs/Al_xGa_1-xAs quantum well structures JF - Solid State Phenomena JA - Solid State Phenom. J1 - SSP VL - 63/64 SP - 473 PY - 1998/01/01

Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry

@article{ author = { B. Jenichen and H.T. Grahn and T. Kojima and S. Arai }, title = { Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry }, journal = { Journal of Applied Physics }, volume = { 83 }, year = { 1998 }, pages = { 5810 } }

TY - JOUR AU - B. Jenichen AU - H.T. Grahn AU - T. Kojima AU - S. Arai TI - Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 83 SP - 5810 PY - 1998/01/01

Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence

@article{ author = { V. G. Litovchenko and D. V. Korbutyak and S. G. Krylyuk and H.T. Grahn and R. Klann and K. H. Ploog }, title = { Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence }, journal = { Proceedings of the Society for Optical Engineering }, volume = { 3359 }, year = { 1998 }, pages = { 182 } }

TY - JOUR AU - V. G. Litovchenko AU - D. V. Korbutyak AU - S. G. Krylyuk AU - H.T. Grahn AU - R. Klann AU - K. H. Ploog TI - Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence JF - Proceedings of the Society for Optical Engineering JA - Proc. SPIE Int. Soc. Opt. Eng. J1 - SPIE VL - 3359 SP - 182 PY - 1998/01/01

The relocation time of the domain boundary in weakly coupled GaAs/AlAs superlattices

@article{ author = { K. J. Luo and H.T. Grahn and K. H. Ploog }, title = { The relocation time of the domain boundary in weakly coupled GaAs/AlAs superlattices }, journal = { Physical Review B: Solid State }, volume = { 57 }, year = { 1998 }, pages = { R6838 } }

TY - JOUR AU - K. J. Luo AU - H.T. Grahn AU - K. H. Ploog TI - The relocation time of the domain boundary in weakly coupled GaAs/AlAs superlattices JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 57 SP - R6838 PY - 1998/01/01