Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting

@article{ author = { J. Kamimura and P. Bogdanoff and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting }, journal = { Semiconductor Science and Technology }, volume = { 31 }, year = { 2016 }, pages = { 074001 } }

TY - JOUR AU - J. Kamimura AU - P. Bogdanoff AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 31 SP - 074001 PY - 2016/06/06

Optical phonon modulation in semiconductors by surface acoustic wave

@article{ author = { F. Iikawa and A. Hernández-Mínguez and M. Ramsteiner and P. V. Santos }, title = { Optical phonon modulation in semiconductors by surface acoustic wave }, journal = { Physical Review B: Solid State }, volume = { 93 }, year = { 2016 }, pages = { 195212 } }

TY - JOUR AU - F. Iikawa AU - A. Hernández-Mínguez AU - M. Ramsteiner AU - P. V. Santos TI - Optical phonon modulation in semiconductors by surface acoustic wave JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 93 SP - 195212 PY - 2016/05/31

High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction

@article{ author = { J. Kamimura and M. Ramsteiner and U. Jahn and Cheng-Ying James Lu and Akihiko Kikuchi and Katsumi Kishino and H. Riechert }, title = { High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction }, journal = { Journal of Physics D: Applied Physics }, volume = { 49 }, year = { 2016 }, pages = { 155106 } }

TY - JOUR AU - J. Kamimura AU - M. Ramsteiner AU - U. Jahn AU - Cheng-Ying James Lu AU - Akihiko Kikuchi AU - Katsumi Kishino AU - H. Riechert TI - High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 49 SP - 155106 PY - 2016/03/16

Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy

@article{ author = { F. Isa and C. Chèze and M. Siekacz and C. Hauswald and J. Lähnemann and S. Fernández-Garrido and T. Kreilinger and M. Ramsteiner and Y. A. Rojas Dasilva and O. Brandt and G. Isella and R. Erni and R. Calarco and H. Riechert and L. Miglio }, title = { Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy }, journal = { Crystal Growth & Design }, volume = { 15 }, year = { 2015 }, pages = { 4886 } }

TY - JOUR AU - F. Isa AU - C. Chèze AU - M. Siekacz AU - C. Hauswald AU - J. Lähnemann AU - S. Fernández-Garrido AU - T. Kreilinger AU - M. Ramsteiner AU - Y. A. Rojas Dasilva AU - O. Brandt AU - G. Isella AU - R. Erni AU - R. Calarco AU - H. Riechert AU - L. Miglio TI - Integration of GaN crystals on micro-patterned Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 15 SP - 4886 PY - 2015/09/14

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

@article{ author = { V. M. Kaganer and B. Jenichen and M. Ramsteiner and U. Jahn and C. Hauswald and F. Grosse and S. Fernández-Garrido and O. Brandt }, title = { Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films }, journal = { Journal of Physics D: Applied Physics }, volume = { 48 }, year = { 2015 }, pages = { 385105 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - C. Hauswald AU - F. Grosse AU - S. Fernández-Garrido AU - O. Brandt TI - Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 48 SP - 385105 PY - 2015/09/02

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

@article{ author = { M.H. Oliveira Jr. and J. M. J. Lopes and T. Schumann and L. A. Galves and M. Ramsteiner and K. Berlin and A. Trampert and H. Riechert }, title = { Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces }, journal = { Nature Communications }, volume = { 6 }, year = { 2015 }, pages = { 7632 } }

TY - JOUR AU - M.H. Oliveira Jr. AU - J. M. J. Lopes AU - T. Schumann AU - L. A. Galves AU - M. Ramsteiner AU - K. Berlin AU - A. Trampert AU - H. Riechert TI - Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces JF - Nature Communications JA - Nat. Commun. J1 - VL - 6 SP - 7632 PY - 2015/07/09

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

@article{ author = { S. Nakhaie and J. M. Wofford and T. Schumann and U. Jahn and M. Ramsteiner and M. Hanke and J. M. J. Lopes and H. Riechert }, title = { Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 106 }, year = { 2015 }, pages = { 213108 } }

TY - JOUR AU - S. Nakhaie AU - J. M. Wofford AU - T. Schumann AU - U. Jahn AU - M. Ramsteiner AU - M. Hanke AU - J. M. J. Lopes AU - H. Riechert TI - Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 106 SP - 213108 PY - 2015/05/27

Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

@article{ author = { Stefan Weidemann and Maximilian Kockert and Dirk Wallacher and M. Ramsteiner and Anna Mogilatenko and Klaus Rademann and Saskia F. Fischer }, title = { Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms }, journal = { Journal of Nanomaterials }, volume = { 2015 }, year = { 2015 }, pages = { 672305 } }

TY - JOUR AU - Stefan Weidemann AU - Maximilian Kockert AU - Dirk Wallacher AU - M. Ramsteiner AU - Anna Mogilatenko AU - Klaus Rademann AU - Saskia F. Fischer TI - Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms JF - Journal of Nanomaterials JA - J1 - VL - 2015 SP - 672305 PY - 2015/04/16

Domain matching epitaxy of cubic In2O3 on r-plane sapphire

@article{ author = { P. Vogt and A. Trampert and M. Ramsteiner and O. Bierwagen }, title = { Domain matching epitaxy of cubic In2O3 on r-plane sapphire }, journal = { Physica Status Solidi A }, volume = { 7 }, year = { 2015 }, pages = { 1433 } }

TY - JOUR AU - P. Vogt AU - A. Trampert AU - M. Ramsteiner AU - O. Bierwagen TI - Domain matching epitaxy of cubic In2O3 on r-plane sapphire JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 7 SP - 1433 PY - 2015/03/05

Probing the electronic band structure of ferromagnets with spin injection and extraction

@article{ author = { P. Bruski and S. C. Erwin and J. Herfort and A. Tahraoui and M. Ramsteiner }, title = { Probing the electronic band structure of ferromagnets with spin injection and extraction }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 245150 } }

TY - JOUR AU - P. Bruski AU - S. C. Erwin AU - J. Herfort AU - A. Tahraoui AU - M. Ramsteiner TI - Probing the electronic band structure of ferromagnets with spin injection and extraction JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 245150 PY - 2014/12/31