Si doping effects on (In,Ga)N nanowires

@article{ author = { J. Kamimura and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Si doping effects on (In,Ga)N nanowires }, journal = { Journal of Applied Physics }, volume = { 116 }, year = { 2014 }, pages = { 244310 } }

TY - JOUR AU - J. Kamimura AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Si doping effects on (In,Ga)N nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 116 SP - 244310 PY - 2014/12/30

Structure of a new rotationally faulted multi-layer graphene-carbon nanoflower composite

@article{ author = { M. Miettinen and T. Torvela and C. Pfüller and J. Hokkinen and M. Ramsteiner and L. Modesto-Lopez and J. Jokiniemi and A. Lähde }, title = { Structure of a new rotationally faulted multi-layer graphene-carbon nanoflower composite }, journal = { Carbon }, volume = { 84 }, year = { 2014 }, pages = { 214 } }

TY - JOUR AU - M. Miettinen AU - T. Torvela AU - C. Pfüller AU - J. Hokkinen AU - M. Ramsteiner AU - L. Modesto-Lopez AU - J. Jokiniemi AU - A. Lähde TI - Structure of a new rotationally faulted multi-layer graphene-carbon nanoflower composite JF - Carbon JA - Carbon J1 - VL - 84 SP - 214 PY - 2014/12/03

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and C. Hauswald and B. Jenichen and M. Ramsteiner and V. Consonni and L. Geelhaar and O. Brandt }, title = { Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 455702 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - C. Hauswald AU - B. Jenichen AU - M. Ramsteiner AU - V. Consonni AU - L. Geelhaar AU - O. Brandt TI - Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 455702 PY - 2014/10/20

Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions

@article{ author = { J. M. Wofford and M. H. Oliveira Jr. and T. Schumann and B. Jenichen and M. Ramsteiner and U. Jahn and S. Fölsch and J. M. J. Lopes and H. Riechert }, title = { Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions }, journal = { New Journal Physics }, volume = { 16 }, year = { 2014 }, pages = { 093055 } }

TY - JOUR AU - J. M. Wofford AU - M. H. Oliveira Jr. AU - T. Schumann AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - S. Fölsch AU - J. M. J. Lopes AU - H. Riechert TI - Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions JF - New Journal Physics JA - New J. Phys. J1 - VL - 16 SP - 093055 PY - 2014/09/30

Semicoherent growth of Bi2Te3 layers on InP(111)B by hot wall epitaxy

@article{ author = { Y. Takagaki and B. Jenichen and V. Kopp and U. Jahn and M. Ramsteiner and C. Herrmann }, title = { Semicoherent growth of Bi2Te3 layers on InP(111)B by hot wall epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 29 }, year = { 2014 }, pages = { 075021 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - V. Kopp AU - U. Jahn AU - M. Ramsteiner AU - C. Herrmann TI - Semicoherent growth of Bi2Te3 layers on InP(111)B by hot wall epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 29 SP - 075021 PY - 2014/06/06

Synthesis of SmB6 films by Mg-assisted solid state reaction

@article{ author = { Y. Takagaki and A. Wirsig and M. Ramsteiner and B. Jenichen and U. Jahn }, title = { Synthesis of SmB6 films by Mg-assisted solid state reaction }, journal = { Semiconductor Science and Technology }, volume = { 29 }, year = { 2014 }, pages = { 075016 } }

TY - JOUR AU - Y. Takagaki AU - A. Wirsig AU - M. Ramsteiner AU - B. Jenichen AU - U. Jahn TI - Synthesis of SmB6 films by Mg-assisted solid state reaction JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 29 SP - 075016 PY - 2014/05/16

Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates

@article{ author = { E. Dimakis and U. Jahn and M. Ramsteiner and A. Tahraoui and J. Grandal and X. Kong and O. Marquardt and A. Trampert and H. Riechert and L. Geelhaar }, title = { Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 2604 } }

TY - JOUR AU - E. Dimakis AU - U. Jahn AU - M. Ramsteiner AU - A. Tahraoui AU - J. Grandal AU - X. Kong AU - O. Marquardt AU - A. Trampert AU - H. Riechert AU - L. Geelhaar TI - Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 2604 PY - 2014/05/14

Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study

@article{ author = { P. Kusch and E. Grelich and C. Somaschini and E. Luna and M. Ramsteiner and L. Geelhaar and H. Riechert and S. Reich }, title = { Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study }, journal = { Physical Review B: Solid State }, volume = { 89 }, year = { 2014 }, pages = { 045310 } }

TY - JOUR AU - P. Kusch AU - E. Grelich AU - C. Somaschini AU - E. Luna AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert AU - S. Reich TI - Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 89 SP - 045310 PY - 2014/01/27

Synthesis of novel carbon nanostructures by annealing of silicon-carbon nanoparticles at atmospheric pressure

@article{ author = { M. Miettinen and J. Hokkinen and T. Karhunen and T. Torvela and C. Pfüller and M. Ramsteiner and U. Tapper and A. Auvinen and J. Jokiniemi and A. Lähde }, title = { Synthesis of novel carbon nanostructures by annealing of silicon-carbon nanoparticles at atmospheric pressure }, journal = { Journal of Nanoparticle Research }, volume = { 16 }, year = { 2013 }, pages = { 2168 } }

TY - JOUR AU - M. Miettinen AU - J. Hokkinen AU - T. Karhunen AU - T. Torvela AU - C. Pfüller AU - M. Ramsteiner AU - U. Tapper AU - A. Auvinen AU - J. Jokiniemi AU - A. Lähde TI - Synthesis of novel carbon nanostructures by annealing of silicon-carbon nanoparticles at atmospheric pressure JF - Journal of Nanoparticle Research JA - J. Nanopart. Res. J1 - VL - 16 SP - 2168 PY - 2013/12/04

In_2Se_3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi_2Se_3 films on In-containing surfaces

@article{ author = { Y. Takagaki and B. Jenichen and U. Jahn and M. Ramsteiner and K. Biermann }, title = { In_2Se_3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi_2Se_3 films on In-containing surfaces }, journal = { Semiconductor Science and Technology }, volume = { 28 }, year = { 2013 }, pages = { 115013 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - U. Jahn AU - M. Ramsteiner AU - K. Biermann TI - In_2Se_3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi_2Se_3 films on In-containing surfaces JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 28 SP - 115013 PY - 2013/10/18