Optical emission from ultrathin strained type-II InP/GaP quantum wells

@article{ author = { F. Hatami and G. Mussler and M. Schmidbauer and W. T. Masselink and L. Schrottke and H.-Y. Hao and H.T. Grahn }, title = { Optical emission from ultrathin strained type-II InP/GaP quantum wells }, journal = { Applied Physics Letters }, volume = { 79 }, year = { 2001 }, pages = { 2886 } }

TY - JOUR AU - F. Hatami AU - G. Mussler AU - M. Schmidbauer AU - W. T. Masselink AU - L. Schrottke AU - H.-Y. Hao AU - H.T. Grahn TI - Optical emission from ultrathin strained type-II InP/GaP quantum wells JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 79 SP - 2886 PY - 2001/01/01

InP quantum dots in (100)GaP: Growth and luminescence

@article{ author = { W. T. Masselink and F. Hatami and G. Mussler and L. Schrottke }, title = { InP quantum dots in (100)GaP: Growth and luminescence }, journal = { Materials Science in Semiconductor Processing }, volume = { 4 }, year = { 2001 }, pages = { 497 } }

TY - JOUR AU - W. T. Masselink AU - F. Hatami AU - G. Mussler AU - L. Schrottke TI - InP quantum dots in (100)GaP: Growth and luminescence JF - Materials Science in Semiconductor Processing JA - Mater. Sci. Semicond. Process. J1 - MSSP VL - 4 SP - 497 PY - 2001/01/01

Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice }, journal = { Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) }, volume = { }, year = { 2001 }, pages = { 635 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Electric-field-dependent carrier dynamics in an (Al,Ga)As/GaAs double-quantum-well superlattice JF - Proceedings of the 25th International Conference on the Physics of Semiconductors; edited by N. Miura and T. Ando (Springer, Berlin, 2001) JA - Proc. ICPS 25 J1 - VL - SP - 635 PY - 2001/01/01

Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy }, journal = { Applied Physics Letters }, volume = { 79 }, year = { 2001 }, pages = { 629 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 79 SP - 629 PY - 2001/01/01

Radiative recombination in InP quantum dots on GaP

@article{ author = { F. Hatami and W. T. Masselink and L. Schrottke }, title = { Radiative recombination in InP quantum dots on GaP }, journal = { Proceedings of the 12th International Conference on Microelectronics; (U. Tehran, Tehran, 2000) }, volume = { }, year = { 2000 }, pages = { 129 } }

TY - JOUR AU - F. Hatami AU - W. T. Masselink AU - L. Schrottke TI - Radiative recombination in InP quantum dots on GaP JF - Proceedings of the 12th International Conference on Microelectronics; (U. Tehran, Tehran, 2000) JA - Proc. ICM 12 J1 - VL - SP - 129 PY - 2000/01/01

Investigation of electric-field dependent population properties in a GaAs/(Al,Ga)As multiple, asymmetric double quantum well structure by photoluminescence spectroscopy

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Investigation of electric-field dependent population properties in a GaAs/(Al,Ga)As multiple, asymmetric double quantum well structure by photoluminescence spectroscopy }, journal = { Physica E: Low-dimensional Systems and Nanostructures }, volume = { 7 }, year = { 2000 }, pages = { 259 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Investigation of electric-field dependent population properties in a GaAs/(Al,Ga)As multiple, asymmetric double quantum well structure by photoluminescence spectroscopy JF - Physica E: Low-dimensional Systems and Nanostructures JA - Physica E (Amsterdam) J1 - PhE VL - 7 SP - 259 PY - 2000/01/01

Direct evidence for the type-II character of In_0.52Al_0.48As/AlAs_0.56Sb_0.44 multiple quantum well structures

@article{ author = { J. Ringling and L. Schrottke and H.T. Grahn and Y. Kawamura and K. Yoshimastu and A. Kamada and N. Inoue }, title = { Direct evidence for the type-II character of In_0.52Al_0.48As/AlAs_0.56Sb_0.44 multiple quantum well structures }, journal = { Proceedings of the 25th International Symposium on Compound Semiconductors; edited by H. Sakaki, J.-C. Woo, N. Yokoyama, and Y. Hirayama, IOP Conf. Ser. }, volume = { 162 }, year = { 1999 }, pages = { 609 } }

TY - JOUR AU - J. Ringling AU - L. Schrottke AU - H.T. Grahn AU - Y. Kawamura AU - K. Yoshimastu AU - A. Kamada AU - N. Inoue TI - Direct evidence for the type-II character of In_0.52Al_0.48As/AlAs_0.56Sb_0.44 multiple quantum well structures JF - Proceedings of the 25th International Symposium on Compound Semiconductors; edited by H. Sakaki, J.-C. Woo, N. Yokoyama, and Y. Hirayama, IOP Conf. Ser. JA - Proc. ISCS 25 J1 - - VL - 162 SP - 609 PY - 1999/01/01

Electric-field induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice

@article{ author = { L. Schrottke and R. Hey and H.T. Grahn }, title = { Electric-field induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice }, journal = { Physical Review B: Solid State }, volume = { 60 }, year = { 1999 }, pages = { 16635 } }

TY - JOUR AU - L. Schrottke AU - R. Hey AU - H.T. Grahn TI - Electric-field induced anti-Stokes photoluminescence in an asymmetric GaAs/(Al,Ga)As double quantum well superlattice JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 60 SP - 16635 PY - 1999/01/01

Excitonic properties of weakly coupled GaAs single quantum wells with growth islands

@article{ author = { L. Schrottke and J. Ringling and R. Hey and H.T. Grahn and K. Fujiwara }, title = { Excitonic properties of weakly coupled GaAs single quantum wells with growth islands }, journal = { Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) }, volume = { }, year = { 1999 }, pages = { IV-D-33 (0433.pdf) } }

TY - JOUR AU - L. Schrottke AU - J. Ringling AU - R. Hey AU - H.T. Grahn AU - K. Fujiwara TI - Excitonic properties of weakly coupled GaAs single quantum wells with growth islands JF - Proceedings of the 24th International Conference on the Physics of Semiconductors; edited by D. Gershoni (World Scientific, Singapore, 1999) JA - Proc. ICPS 24 J1 - - VL - SP - IV-D-33 (0433.pdf) PY - 1999/01/01

Electron paramagnetic resonance and photoluminescence studies of chromium in SrS

@article{ author = { J. Kreissl and U. Troppenz and B. Hüttl and L. Schrottke and C. Fouassier }, title = { Electron paramagnetic resonance and photoluminescence studies of chromium in SrS }, journal = { Applied Physics Letters }, volume = { 72 }, year = { 1998 }, pages = { 1232 } }

TY - JOUR AU - J. Kreissl AU - U. Troppenz AU - B. Hüttl AU - L. Schrottke AU - C. Fouassier TI - Electron paramagnetic resonance and photoluminescence studies of chromium in SrS JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 72 SP - 1232 PY - 1998/01/01