Dynamics of a Ga2O3 layer growing on a c-plane sapphire substrate: In-situ probe of the intensity (a) along the crystal truncation rod (i.e., along the surface normal) taken during the deposition and (b) along the [10-10] in-plane direction. Straight dashed lines (blue and red) mark the expected positions for contributions from bulk α and β-phases. The curved blue arrow line in (a) depicts a decreasing lattice parameter out-of-plane.

PDI’s PHARAO end station at the Berlin synchrotron BESSYII (Helmholtz-Zentrum Berlin, HZB) facilitates in-situ x-ray diffraction to study growth dynamics of epitaxial layers during molecular beam epitaxy (MBE). A direct, surface sensitive access to crystal symmetry, elastic strain and surface reconstruction under realistic growth conditions, and in real-time, improves our understanding of fundamental growth-related phenomena as interface formation, strain relaxation and reconstruction dynamics. In 2019 a state-of-the-art two-dimensional hybrid detector (EIGER 500k) has been fully implemented into the PHARAO infrastructure enabling a highly parallelized and thus even faster data acquisition. This in general opens new perspectives towards reciprocal space mappings on a time scale of seconds. Recently we are focusing on group III-oxides to explore epitaxial growth modes, the formation of surfaces and interfaces and phase transitions.

Selected Publications

4 Author B. Jenichen , Z. Cheng , M. Hanke , J. Herfort , A. Trampert

Lattice matched Volmer-Weber growth of Fe3Si on GaAs(001) -- the influence of the growth rate

Source Semicond. Sci. Technol. , 34 , 124002 ( 2019 )
DOI : 10.1088/1361-6641/ab4c79 | Download arXiv: 1907.05076 | 3124 Cite : Bibtex RIS
B. Jenichen, Z. Cheng, M. Hanke, J. Herfort, and A. Trampert

3 Author Z. Cheng , M. Hanke , Z. Galazka , A. Trampert

Thermal expansion of single-crystalline beta-Ga2O3 from RT to 1200K studied by synchrotron-based high resolution x-ray diffraction

Source Appl. Phys. Lett. , 113 , 182102 ( 2018 )
DOI : 10.1063/1.5054265 | Download: PDF | 3060 Cite : Bibtex RIS
Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert

2 Author Z. Cheng , M. Hanke , Z. Galazka , A. Trampert

Growth mode evolution during (100)-oriented beta-Ga2O3 homoepitaxy

Source Nanotechnol. , 29 , 395705 ( 2018 )
DOI : 10.1088/1361-6528/aad21b | 2996 Cite : Bibtex RIS
Z. Cheng, M. Hanke, Z. Galazka, and A. Trampert

1 Author Z. Cheng , M. Hanke , P. Vogt , O. Bierwagen , A. Trampert

Phase formation and strain relaxation of Ga2O3 on various sapphire orientations as studied by synchrotron-based x-ray diffraction

Source Appl. Phys. Lett. , 111 , 162104 ( 2017 )
DOI : 10.1063/1.4998804 | Download: PDF | 2948 Cite : Bibtex RIS
Z. Cheng, M. Hanke, P. Vogt, O. Bierwagen, and A. Trampert


Dr. Achim Trampert

Head of Department 

+49 30 20377-280