Interfaces in epitaxial hetero-structures and nanosystems

A central goal in preparing modern artificial heterostructures and nanomaterials is the control of interfaces and the understanding of their building principles. Interfaces have a crucial effect on both, physical properties and device performance, in particular as structure sizes become smaller. The detailed analysis and understanding of morphology and chemical intermixing of epitaxial interfaces allows a better control during growth and opens the possibility to tune the interface property with the appropriate functionality in nano-structured materials.


Epitaxial hetero-interfaces are generally classified as coherent or semi-coherent, depending on the epitaxial strain state. We are studying the character of epitaxial strain and strain relieving mechanisms as well as the atomic configuration and translation state of coherent interfaces between dissimilar materials.


In addition, interfaces in III-V semiconductors as well as heterovalent II-VI/III-V hetero-structures are quantitatively analyzed with respect to structural roughness and chemical intermixing as defined by compositional profiles. Finally, the three-dimensional character of real interfaces is examined and comprehensively represented by means of sophisticated electron tomography methods.

Selected Publications

4 Author E. Luna , A. Trampert , J.Lu , T. Aoki , Y.-H. Zhang , M. R. McCartney , D. J. Smith

Strategies for Analyzing Noncommon-Atom Heterovalent Interfaces: The Case of CdTe-on-InSb

Source Advanced Materials Interfaces , 7 , 1901658 ( 2020 )
DOI : 10.1002/admi.201901658 | 3167 Cite : Bibtex RIS
E. Luna, A. Trampert, J.Lu, T. Aoki, Y.-H. Zhang, M. R. McCartney, and D. J. Smith

3 Author E. Luna , O. Delorme , L. Cerutti , E. Tournie , J.-B. Rodriguez , A. Trampert

Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications

Source Appl. Phys. Lett. , 112 , 151905 ( 2018 )
DOI : 10.1063/1.5024199 | Download: PDF | 3029 Cite : Bibtex RIS
E. Luna, O. Delorme, L. Cerutti, E. Tournie, J.-B. Rodriguez, and A. Trampert

2 Author K. Berlin , A. Trampert

Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy

Source Ultramicroscopy , 178 , 27 ( 2017 )
DOI : 10.1016/j.ultramic.2016.10.010 | 2883 Cite : Bibtex RIS
K. Berlin, and A. Trampert

1 Author T. Krause , M. Hanke , L. Nicolai , Z. Cheng , M. Niehle , A. Trampert , M. Kahnt , G. Falkenberg , C. Schroer , J. Hartmann , H. Zhou , H.-H. Wehmann , A. Waag

Structural and compositional analysis of isolated core-shell (In,Ga)N/GaN rods based on nanofocus x-ray diffraction and scanning transmission electron microscopy

Source Phys. Rev. Appl. , 7 , 024033 ( 2017 )
DOI : 10.1103/PhysRevApplied.7.024033 | 2881 Cite : Bibtex RIS
T. Krause, M. Hanke, L. Nicolai, Z. Cheng, M. Niehle, A. Trampert, M. Kahnt, G. Falkenberg, C. Schroer, J. Hartmann, H. Zhou, H.-H. Wehmann, and A. Waag


Dr. Achim Trampert

Head of Department 

+49 30 20377-280