Paul-Drude-Institut -Real Structure

Real structure and mechanical properties of metastable and nanostructured systems

The functionality of many metastable or nanoscale materials (such as graphene or 2D layer crystals) depends essentially on their structural perfection and compositional homogeneity on the atomic to mesoscopic scale. In-situ/ex-situ X-ray diffraction in combination with (scanning) transmission electron microscopy (TEM) techniques are used to comprehensively explore these materials with respect to their structural, chemical and mechanical properties on all relevant length scales. The exact knowledge of these properties serves as a basis for the targeted adjustment and optimization of the material functionality.

Our research currently focuses on the following topical and methodological issues:

Structural research on graphene, 2D layer crystals and metastable layered systems
Composition fluctuations in dilute semiconductor compounds
Synchrotron-based x-ray diffraction for in-situ and ex-situ studies
Elastic and plastic properties of nano-objects (nanoindentation)
Numerical description of mechanical properties using Finite Element Method

While conventional TEM delivers a 2D image of the 3D object, electron tomography provides a complete 3D reconstruction of the real objects. The method offers new possibilities for structural analysis and presentation down to the nanometer range. It is especially useful for material questions based on an inhomogeneous spatial distribution of structural units or on chemical composition fluctuations, as well as on complex defect structures (see Application Laboratory Electron Tomography).

Selected Paublications

4	Author	M. Heilmann , A. S. Prikhodko , M. Hanke , A. Sabelfeld , N. I. Borgardt , J. M. J. Lopes
	Title	Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/hexagonal Boron Nitride Heterostructures
	Source	ACS Appl. Mater. Interfaces , 12 , 8897 ( 2020 )
DOI : 10.1021/acsami.9b21490 \| 3155 Cite : Bibtex RIS @article{ author = { M. Heilmann and A. S. Prikhodko and M. Hanke and A. Sabelfeld and N. I. Borgardt and J. M. J. Lopes }, title = { Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/hexagonal Boron Nitride Heterostructures }, journal = { ACS Applied Materials and Interfaces }, volume = { 12 }, year = { 2020 }, pages = { 8897 } } M. Heilmann, A. S. Prikhodko, M. Hanke, A. Sabelfeld, N. I. Borgardt, and J. M. J. Lopes TY - JOUR AU - M. Heilmann AU - A. S. Prikhodko AU - M. Hanke AU - A. Sabelfeld AU - N. I. Borgardt AU - J. M. J. Lopes TI - Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/hexagonal Boron Nitride Heterostructures JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 12 SP - 8897 PY - 2020/01/23

3	Author	L. Nicolai , Ž. Gačević , E. Calleja , A. Trampert
	Title	Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires
	Source	Nanoscale Res. Lett. , 14 , 232 ( 2019 )
DOI : 10.1186/s11671-019-3072-1 \| Download: PDF \| 3096 Cite : Bibtex RIS @article{ author = { L. Nicolai and Ž. Gačević and E. Calleja and A. Trampert }, title = { Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires }, journal = { Nanoscale Research Letters }, volume = { 14 }, year = { 2019 }, pages = { 232 } } L. Nicolai, Ž. Gačević, E. Calleja, and A. Trampert TY - JOUR AU - L. Nicolai AU - Ž. Gačević AU - E. Calleja AU - A. Trampert TI - Electron tomography of pencil-shaped GaN/(In,Ga)N core-shell nanowires JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 14 SP - 232 PY - 2019/07/12

2	Author	J. Berggren , M. Hanke , E. Luna , A. Trampert
	Title	Supernormal hardness increase of dilute Ga(As, N) thin films
	Source	J. Appl. Phys. , 121 , 095105 ( 2017 )
DOI : 10.1063/1.4978019 \| Download: PDF \| 2907 Cite : Bibtex RIS @article{ author = { J. Berggren and M. Hanke and E. Luna and A. Trampert }, title = { Supernormal hardness increase of dilute Ga(As, N) thin films }, journal = { Journal of Applied Physics }, volume = { 121 }, year = { 2017 }, pages = { 095105 } } J. Berggren, M. Hanke, E. Luna, and A. Trampert TY - JOUR AU - J. Berggren AU - M. Hanke AU - E. Luna AU - A. Trampert TI - Supernormal hardness increase of dilute Ga(As, N) thin films JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 121 SP - 095105 PY - 2017/03/07

1	Author	M. Wu , M. Hanke , E. Luna , J. Puustinen , M. Guina , A. Trampert
	Title	Detecting lateral composition modulation in dilute GaAsBi epilayers
	Source	Nanotechnol. , 26 , 425701 ( 2015 )
DOI : 10.1088/0957-4484/26/42/425701 \| 2710 Cite : Bibtex RIS @article{ author = { M. Wu and M. Hanke and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Detecting lateral composition modulation in dilute GaAsBi epilayers }, journal = { Nanotechnology }, volume = { 26 }, year = { 2015 }, pages = { 425701 } } M. Wu, M. Hanke, E. Luna, J. Puustinen, M. Guina, and A. Trampert TY - JOUR AU - M. Wu AU - M. Hanke AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Detecting lateral composition modulation in dilute GaAsBi epilayers JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 26 SP - 425701 PY - 2015/09/30

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Real structure and mechanical properties of metastable and nanostructured systems

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