Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio

@article{ author = { P. Mazzolini and O. Bierwagen }, title = { Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio }, journal = { Journal of Physics D: Applied Physics }, volume = { 53 }, year = { 2020 }, pages = { 354003 } }

TY - JOUR AU - P. Mazzolini AU - O. Bierwagen TI - Towards smooth (010) β-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 53 SP - 354003 PY - 2020/04/30

Gallium Oxide - Plasma-Assisted Molecular Beam Epitaxy 2—Fundamentals of Suboxide-Related Growth Kinetics, Thermodynamics, Catalysis, Polymorphs, and Faceting

@article{ author = { O. Bierwagen and P. Vogt and P. Mazzolini }, title = { Gallium Oxide - Plasma-Assisted Molecular Beam Epitaxy 2—Fundamentals of Suboxide-Related Growth Kinetics, Thermodynamics, Catalysis, Polymorphs, and Faceting }, journal = { Springer Series in Materials Science }, volume = { 293 }, year = { 2020 }, pages = { 95 } }

TY - JOUR AU - O. Bierwagen AU - P. Vogt AU - P. Mazzolini TI - Gallium Oxide - Plasma-Assisted Molecular Beam Epitaxy 2—Fundamentals of Suboxide-Related Growth Kinetics, Thermodynamics, Catalysis, Polymorphs, and Faceting JF - Springer Series in Materials Science JA - J1 - VL - 293 SP - 95 PY - 2020/04/24

Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O

@article{ author = { G. Hoffmann and M. Budde and P. Mazzolini and O. Bierwagen }, title = { Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O }, journal = { APL Materials }, volume = { 8 }, year = { 2020 }, pages = { 031110 } }

TY - JOUR AU - G. Hoffmann AU - M. Budde AU - P. Mazzolini AU - O. Bierwagen TI - Efficient suboxide sources in oxide molecular beam epitaxy using mixed metal + oxide charges: The examples of SnO and Ga2O JF - APL Materials JA - APL Mater. J1 - APLM VL - 8 SP - 031110 PY - 2020/03/12

Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (ˉ201) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

@article{ author = { P. Mazzolini and A. Falkenstein and C. Wouters and R. Schewski and T. Markurt and Z. Galazka and M. Martin and M. Albrecht and O. Bierwagen }, title = { Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (ˉ201) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) }, journal = { APL Materials }, volume = { 8 }, year = { 2020 }, pages = { 011107 } }

TY - JOUR AU - P. Mazzolini AU - A. Falkenstein AU - C. Wouters AU - R. Schewski AU - T. Markurt AU - Z. Galazka AU - M. Martin AU - M. Albrecht AU - O. Bierwagen TI - Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (ˉ201) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) JF - APL Materials JA - APL Mater. J1 - APLM VL - 8 SP - 011107 PY - 2020/01/10

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

@article{ author = { M. Budde and T. Remmele and C. Tschammer and J. Feldl and P. Franz and J. Lähnemann and Z. Cheng and M. Hanke and M. Ramsteiner and M. Albrecht and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 015306 } }

TY - JOUR AU - M. Budde AU - T. Remmele AU - C. Tschammer AU - J. Feldl AU - P. Franz AU - J. Lähnemann AU - Z. Cheng AU - M. Hanke AU - M. Ramsteiner AU - M. Albrecht AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 015306 PY - 2020/01/06

The electrical conductivity tensor of beta-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

@article{ author = { C. Golz and Z. Galazka and J. Lähnemann and V. Hortelano and F. Hatami and W.T. Masselink and O. Bierwagen }, title = { The electrical conductivity tensor of beta-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries }, journal = { Physical Review Materials }, volume = { 3 }, year = { 2019 }, pages = { 124604 } }

TY - JOUR AU - C. Golz AU - Z. Galazka AU - J. Lähnemann AU - V. Hortelano AU - F. Hatami AU - W.T. Masselink AU - O. Bierwagen TI - The electrical conductivity tensor of beta-Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 3 SP - 124604 PY - 2019/12/27

The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications

@article{ author = { V. Jovic and S. Moser and A. Papadogianni and R.J. Koch and A. Rossi and C. Jozwiak and A. Bostwick and E. Rotenberg and J.V. Kennedy and O. Bierwagen and K.E. Smith }, title = { The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications }, journal = { Small }, volume = { 16 }, year = { 2019 }, pages = { 1903321 } }

TY - JOUR AU - V. Jovic AU - S. Moser AU - A. Papadogianni AU - R.J. Koch AU - A. Rossi AU - C. Jozwiak AU - A. Bostwick AU - E. Rotenberg AU - J.V. Kennedy AU - O. Bierwagen AU - K.E. Smith TI - The Itinerant 2-Dimensional Electron Gas of the Indium Oxide (111) Surface: Implications for Carbon‐ and Energy‐Conversion Applications JF - Small JA - Small J1 - VL - 16 SP - 1903321 PY - 2019/09/05

Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101)

@article{ author = { C.E. Simion and F. Schipani and A. Papadogianni and A. Stanoiu and M. Budde and A. Oprea and U. Weimar and O. Bierwagen and N. Barsan }, title = { Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) }, journal = { ACS Sensors }, volume = { 4 }, year = { 2019 }, pages = { 2420 } }

TY - JOUR AU - C.E. Simion AU - F. Schipani AU - A. Papadogianni AU - A. Stanoiu AU - M. Budde AU - A. Oprea AU - U. Weimar AU - O. Bierwagen AU - N. Barsan TI - Conductance Model for Single-Crystalline/Compact Metal Oxide Gas Sensing Layers in the Non-Degenerate Limit: Example of Epitaxial SnO2(101) JF - ACS Sensors JA - ACS Sens. J1 - VL - 4 SP - 2420 PY - 2019/08/15

Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals

@article{ author = { T. Nagata and O. Bierwagen and Z. Galazka and S. Ueda and M. Imura and Y. Yamashita and T. Chikyow }, title = { Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 58 }, year = { 2019 }, pages = { 080903 } }

TY - JOUR AU - T. Nagata AU - O. Bierwagen AU - Z. Galazka AU - S. Ueda AU - M. Imura AU - Y. Yamashita AU - T. Chikyow TI - Photoelectron spectroscopic study on electronic state and electrical properties of SnO2 single crystals JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 58 SP - 080903 PY - 2019/07/12

Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3

@article{ author = { J. Michel and D. Splith and J. Rombach and A. Papadogianni and T. Berthold and S. Krischok and M. Grundmann and O. Bierwagen and H. von Wenckstern and M. Himmerlich }, title = { Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 }, journal = { ACS Applied Materials and Interfaces }, volume = { 11 }, year = { 2019 }, pages = { 27073 } }

TY - JOUR AU - J. Michel AU - D. Splith AU - J. Rombach AU - A. Papadogianni AU - T. Berthold AU - S. Krischok AU - M. Grundmann AU - O. Bierwagen AU - H. von Wenckstern AU - M. Himmerlich TI - Processing Strategies for High-Performance Schottky Contacts on n-type Oxide Semiconductors: Insights from In2O3 JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 11 SP - 27073 PY - 2019/07/04