PDI -> Research -> Core Research Areas -> Nanoelectronics

Nanoelectronics

 

Semiconductor-based technology platforms for data communication, processing, and storage based on quantum phenomena become increasingly more important. In the near future, the range of electronic applications and functionalities is expected to further increase due to quantum computing, secure data communication, and artificial intelligence. This development is based on fundamental and applied research on quantum effects and quantum mechanical quantities including the coupling of electronic quantum states and the coherent transport between them, spin transport, as well as transport by resonant tunneling. In the long run, the application of coherent quantum effects may revolutionize information technology.

 

The CReA Nanoelectronics explores quantum effects and quantum transport of electrons as well as spins in artificial hetero- and nanostructures, ionic transport in solid electrolytes, and materials for topological insulators. Nanoscale quantum circuits fabricated by electron-beam lithography are investigated by transport experiments at very low temperatures and also in high magnetic fields. Quantum transport is also investigated under the influence of superconductivity. Spin transport phenomena are studied in ferromagnet/semiconductor hybrid structures. Topological insulators are also an interesting system for the realization of spin transport, since they contain metallic helical surface states, for which spin and momentum are coupled to each other.

Selected Publications

7 Author D. Czubak , S. Gaucher , L. Oppermann , J. Herfort , K. Zollner , J. Fabian , H. T. Grahn , M. Ramsteiner
Title

Electronic and magnetic properties of alpha-FeGe2 films embedded in vertical spin valve devices

Source Phys. Rev. Mater. , 4 , 104415 ( 2020 )
DOI : 10.1103/PhysRevMaterials.4.104415 | Download arXiv: 2010.04453 | 3196 Cite : Bibtex RIS
D. Czubak, S. Gaucher, L. Oppermann, J. Herfort, K. Zollner, J. Fabian, H. T. Grahn, and M. Ramsteiner

6 Author M. Geier , J. Freudenfeld , J. T. Silva , V. Umansky , D. Reuter , A. D. Wieck , P. W. Brouwer , S. Ludwig
Title

Electrostatic potential shape of gate defined quantum point contacts

Source Phys. Rev. B , 101 , 165429 ( 2020 )
DOI : 10.1103/PhysRevB.101.165429 | Download: PDF | 3178 Cite : Bibtex RIS
M. Geier, J. Freudenfeld, J. T. Silva, V. Umansky, D. Reuter, A. D. Wieck, P. W. Brouwer, and S. Ludwig

5 Author Y. Takagaki
Title

Effects of disorder on magnetotransport oscillations in a two-dimensional electron gas terminated by superconductors

Source J. Appl. Phys. , 128 , 024304 ( 2020 )
DOI : 10.1063/5.0005384 | Download: PDF | 3170 Cite : Bibtex RIS
and Y. Takagaki

4 Author Y. Takagaki , B. Jenichen , M. Ramsteiner , A. Trampert
Title

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

Source J. Alloy. Comp. , 824 , 153880 ( 2020 )
DOI : 10.1016/j.jallcom.2020.153880 | 3125 Cite : Bibtex RIS
Y. Takagaki, B. Jenichen, M. Ramsteiner, and A. Trampert

3 Author J. Freudenfeld , M. Geier , V. Umansky , P. W. Brouwer , S. Ludwig
Title

Coherent Electron Optics with Ballistically Coupled Quantum Point Contacts

Source Phys. Rev. Lett. , 125 , 107701 ( 2020 )
DOI : 10.1103/PhysRevLett.125.107701 | Download: PDF | 3101 Cite : Bibtex RIS
J. Freudenfeld, M. Geier, V. Umansky, P. W. Brouwer, and S. Ludwig

2 Author Y. Takagaki , B. Jenichen , O. Brandt
Title

Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111)

Source CrystEngComm , 21 , 5818 ( 2019 )
DOI : 10.1039/c9ce01135h | 3042 Cite : Bibtex RIS
Y. Takagaki, B. Jenichen, and O. Brandt

1 Author Y. Takagaki , M. Ramsteiner , U. Jahn , B. Jenichen , A. Trampert
Title

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Source J. Phys. D: Appl. Phys. , 52 , 385101 ( 2019 )
DOI : 10.1088/1361-6463/ab2cbb | 3031 Cite : Bibtex RIS
Y. Takagaki, M. Ramsteiner, U. Jahn, B. Jenichen, and A. Trampert

Contact

Prof. Dr. Holger T. Grahn

Head of Department 

+49 30 20377-318

htgrahn@pdi-berlin.de