Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

@article{ author = { P. Vogt and F. V. E. Hensling and K. Azizie and C. S. Chang and D. Turner and J. Park and J. P. McCandless and H. Paik and B. J. Bocklund and G. Hoffmann and O. Bierwagen and D. Jena and H. G. Xing and S. Mou and D. A. Muller and S.-L. Shang and Z.-K. Liu and D. G. Schlom }, title = { Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy }, journal = { APL Materials }, volume = { 9 }, year = { 2021 }, pages = { 031101 } }

TY - JOUR AU - P. Vogt AU - F. V. E. Hensling AU - K. Azizie AU - C. S. Chang AU - D. Turner AU - J. Park AU - J. P. McCandless AU - H. Paik AU - B. J. Bocklund AU - G. Hoffmann AU - O. Bierwagen AU - D. Jena AU - H. G. Xing AU - S. Mou AU - D. A. Muller AU - S.-L. Shang AU - Z.-K. Liu AU - D. G. Schlom TI - Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy JF - APL Materials JA - APL Mater. J1 - APLM VL - 9 SP - 031101 PY - 2021/03/03

Isotopic study of Raman active phonon modes in beta-Ga2O3

@article{ author = { B. M. Janzen and P. Mazzolini and R. Gillen and A. Falkenstein and M. Martin and H. Tornatzky and J. Maultzsch and O. Bierwagen and M. R. Wagner }, title = { Isotopic study of Raman active phonon modes in beta-Ga2O3 }, journal = { Journal of Materials Chemistry C }, volume = { 9 }, year = { 2021 }, pages = { 2311 } }

TY - JOUR AU - B. M. Janzen AU - P. Mazzolini AU - R. Gillen AU - A. Falkenstein AU - M. Martin AU - H. Tornatzky AU - J. Maultzsch AU - O. Bierwagen AU - M. R. Wagner TI - Isotopic study of Raman active phonon modes in beta-Ga2O3 JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - 9 SP - 2311 PY - 2021/01/11

SnO/beta-Ga2O3 vertical pn heterojunction diodes

@article{ author = { M. Budde and D. Splith and P. Mazzolini and A. Tahraoui and J. Feldl and M. Ramsteiner and H. von Wenckstern and M. Grundmann and O. Bierwagen }, title = { SnO/beta-Ga2O3 vertical pn heterojunction diodes }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 252106 } }

TY - JOUR AU - M. Budde AU - D. Splith AU - P. Mazzolini AU - A. Tahraoui AU - J. Feldl AU - M. Ramsteiner AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen TI - SnO/beta-Ga2O3 vertical pn heterojunction diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 252106 PY - 2020/12/22

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

@article{ author = { M. Budde and P. Mazzolini and J. Feldl and C. Golz and T. Nagata and S. Ueda and G. Hoffmann and F. Hatami and W. T. Masselink and M. Ramsteiner and O. Bierwagen }, title = { Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass }, journal = { Physical Review Materials }, volume = { 4 }, year = { 2020 }, pages = { 124602 } }

TY - JOUR AU - M. Budde AU - P. Mazzolini AU - J. Feldl AU - C. Golz AU - T. Nagata AU - S. Ueda AU - G. Hoffmann AU - F. Hatami AU - W. T. Masselink AU - M. Ramsteiner AU - O. Bierwagen TI - Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass JF - Physical Review Materials JA - Phys. Rev. Mater. J1 - VL - 4 SP - 124602 PY - 2020/12/16

Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

@article{ author = { P. Mazzolini and A. Falkenstein and Z. Galazka and M. Martin and O. Bierwagen }, title = { Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) }, journal = { Applied Physics Letters }, volume = { 117 }, year = { 2020 }, pages = { 222105 } }

TY - JOUR AU - P. Mazzolini AU - A. Falkenstein AU - Z. Galazka AU - M. Martin AU - O. Bierwagen TI - Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 117 SP - 222105 PY - 2020/12/01

Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers

@article{ author = { J. Kamimura and M. Budde and P. Bogdanoff and C. Tschammer and F. F. Abdi and R. van de Krol and O. Bierwagen and H. Riechert and L. Geelhaar }, title = { Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers }, journal = { Solar RRL }, volume = { 4 }, year = { 2020 }, pages = { 2000568 } }

TY - JOUR AU - J. Kamimura AU - M. Budde AU - P. Bogdanoff AU - C. Tschammer AU - F. F. Abdi AU - R. van de Krol AU - O. Bierwagen AU - H. Riechert AU - L. Geelhaar TI - Protection Mechanism against Photocorrosion of GaN Photoanodes Provided by NiO Thin Layers JF - Solar RRL JA - Sol. RRL J1 - xxx VL - 4 SP - 2000568 PY - 2020/10/21

Influence of Polymorphism on the Electronic Structure of Ga2O3

@article{ author = { J. E. N. Swallow and C. Vorwerk and P. Mazzolini and P. Vogt and O. Bierwagen and A. Karg and M. Eickhoff and J. Schörmann and M. R. Wagner and J. W. Roberts and P. R. Chalker and M. J. Smiles and P. A. E. Murgatroyd and S. A. Razek and Z. W. Lebens-Higgins and L. F. J. Piper and L. A. H. Jones and P. K. Thakur and T.-L. Lee and J. B. Varley and J. Furthmüller and C. Draxl and T. D. Veal and A. Regoutz }, title = { Influence of Polymorphism on the Electronic Structure of Ga2O3 }, journal = { Chemistry of Materials }, volume = { 32 }, year = { 2020 }, pages = { 8460 } }

TY - JOUR AU - J. E. N. Swallow AU - C. Vorwerk AU - P. Mazzolini AU - P. Vogt AU - O. Bierwagen AU - A. Karg AU - M. Eickhoff AU - J. Schörmann AU - M. R. Wagner AU - J. W. Roberts AU - P. R. Chalker AU - M. J. Smiles AU - P. A. E. Murgatroyd AU - S. A. Razek AU - Z. W. Lebens-Higgins AU - L. F. J. Piper AU - L. A. H. Jones AU - P. K. Thakur AU - T.-L. Lee AU - J. B. Varley AU - J. Furthmüller AU - C. Draxl AU - T. D. Veal AU - A. Regoutz TI - Influence of Polymorphism on the Electronic Structure of Ga2O3 JF - Chemistry of Materials JA - J1 - VL - 32 SP - 8460 PY - 2020/09/02

Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors

@article{ author = { S. Niavol and M. Budde and A. Papadogianni and M. Heilmann and H. Milani Moghaddam and C. M. Aldao and G. Ligorio and E. J. W. List-Kratochvil and J. M. J. Lopes and N. Barsan and O. Bierwagen and F. Schipani }, title = { Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors }, journal = { Sensors & Actuators B }, volume = { 325 }, year = { 2020 }, pages = { 128797 } }

TY - JOUR AU - S. Niavol AU - M. Budde AU - A. Papadogianni AU - M. Heilmann AU - H. Milani Moghaddam AU - C. M. Aldao AU - G. Ligorio AU - E. J. W. List-Kratochvil AU - J. M. J. Lopes AU - N. Barsan AU - O. Bierwagen AU - F. Schipani TI - Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors JF - Sensors & Actuators B JA - Sens. Actuators B Chem. J1 - VL - 325 SP - 128797 PY - 2020/08/24

Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping

@article{ author = { A. Papadogianni and J. Rombach and T. Berthold and V. Polyakov and S. Krischok and M. Himmerlich and O. Bierwagen }, title = { Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping }, journal = { Physical Review B: Solid State }, volume = { 102 }, year = { 2020 }, pages = { 075301 } }

TY - JOUR AU - A. Papadogianni AU - J. Rombach AU - T. Berthold AU - V. Polyakov AU - S. Krischok AU - M. Himmerlich AU - O. Bierwagen TI - Two-dimensional electron gas of the In2O3 surface: Enhanced thermopower, electrical transport properties, and reduction by adsorbates or compensating acceptor doping JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 102 SP - 075301 PY - 2020/08/03

Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy

@article{ author = { J. Feldl and M. Budde and C. Tschammer and O. Bierwagen and M. Ramsteiner }, title = { Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy }, journal = { Journal of Applied Physics }, volume = { 127 }, year = { 2020 }, pages = { 235105 } }

TY - JOUR AU - J. Feldl AU - M. Budde AU - C. Tschammer AU - O. Bierwagen AU - M. Ramsteiner TI - Magnetic characteristics of epitaxial NiO films studied by Raman spectroscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 127 SP - 235105 PY - 2020/06/17