A study of SnO/epsilon-Ga2O3 p-n diodes in planar geometry

@article{ author = { A. Parisini and P. Mazzolini and O. Bierwagen and C. Borelli and K. O. Egbo and A. Sacchi and M. Bosi and L. Seravalli and A. Tahraoui and R. Fornari }, title = { A study of SnO/epsilon-Ga2O3 p-n diodes in planar geometry }, journal = { Journal of Vacuum Science and Technology A }, volume = { 40 }, year = { 2022 }, pages = { 042701 } }

TY - JOUR AU - A. Parisini AU - P. Mazzolini AU - O. Bierwagen AU - C. Borelli AU - K. O. Egbo AU - A. Sacchi AU - M. Bosi AU - L. Seravalli AU - A. Tahraoui AU - R. Fornari TI - A study of SnO/epsilon-Ga2O3 p-n diodes in planar geometry JF - Journal of Vacuum Science and Technology A JA - J. Vac. Sci. Technol. A J1 - JVSTA VL - 40 SP - 042701 PY - 2022/06/01

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

@article{ author = { K. Tetzner and K. O. Egbo and M. Klupsch and R.-S. Unger and A. Popp and T.-S. Chou and S. Bin Anooz and Z. Galazka and A. Trampert and O. Bierwagen and J Würfl }, title = { SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes }, journal = { Applied Physics Letters }, volume = { 120 }, year = { 2022 }, pages = { 112110 } }

TY - JOUR AU - K. Tetzner AU - K. O. Egbo AU - M. Klupsch AU - R.-S. Unger AU - A. Popp AU - T.-S. Chou AU - S. Bin Anooz AU - Z. Galazka AU - A. Trampert AU - O. Bierwagen AU - J Würfl TI - SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 120 SP - 112110 PY - 2022/03/18