Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires

@article{ author = { G. Calabrese and D. van Treeck and V. M. Kaganer and O. Konovalov and P. Corfdir and C. Sinito and L. Geelhaar and O. Brandt and S. Fernández-Garrido }, title = { Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires }, journal = { Acta Materialia }, volume = { 195 }, year = { 2020 }, pages = { 87 } }

TY - JOUR AU - G. Calabrese AU - D. van Treeck AU - V. M. Kaganer AU - O. Konovalov AU - P. Corfdir AU - C. Sinito AU - L. Geelhaar AU - O. Brandt AU - S. Fernández-Garrido TI - Radius-Dependent Homogeneous Strain in Uncoalesced GaN Nanowires JF - Acta Materialia JA - Acta Mat. J1 - VL - 195 SP - 87 PY - 2020/05/15

Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films

@article{ author = { M. Azadmand and T. Auzelle and J. Lähnemann and G. Gao and L. Nicolai and M. Ramsteiner and A. Trampert and S. Sanguinetti and O. Brandt and L. Geelhaar }, title = { Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 14 }, year = { 2020 }, pages = { 1900615 } }

TY - JOUR AU - M. Azadmand AU - T. Auzelle AU - J. Lähnemann AU - G. Gao AU - L. Nicolai AU - M. Ramsteiner AU - A. Trampert AU - S. Sanguinetti AU - O. Brandt AU - L. Geelhaar TI - Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 14 SP - 1900615 PY - 2020/03/01

Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band

@article{ author = { J. Herranz and P. Corfdir and E. Luna and U. Jahn and R. B. Lewis and L. Schrottke and J. Lähnemann and A. Tahraoui and A. Trampert and O. Brandt and L. Geelhaar }, title = { Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band }, journal = { ACS Applied Nano Materials }, volume = { 3 }, year = { 2020 }, pages = { 165 } }

TY - JOUR AU - J. Herranz AU - P. Corfdir AU - E. Luna AU - U. Jahn AU - R. B. Lewis AU - L. Schrottke AU - J. Lähnemann AU - A. Tahraoui AU - A. Trampert AU - O. Brandt AU - L. Geelhaar TI - Coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 3 SP - 165 PY - 2020/01/24

Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities

@article{ author = { V. M. Kaganer and J. Lähnemann and C. Pfüller and K. K. Sabelfeld and A. E. Kireeva and O. Brandt }, title = { Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities }, journal = { Physical Review Applied }, volume = { 12 }, year = { 2019 }, pages = { 054038 } }

TY - JOUR AU - V. M. Kaganer AU - J. Lähnemann AU - C. Pfüller AU - K. K. Sabelfeld AU - A. E. Kireeva AU - O. Brandt TI - Determination of the Carrier Diffusion Length in GaN from Cathodoluminescence Maps Around Threading Dislocations: Fallacies and Opportunities JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 12 SP - 054038 PY - 2019/11/15

Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111)

@article{ author = { Y. Takagaki and B. Jenichen and O. Brandt }, title = { Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111) }, journal = { CrystEngComm }, volume = { 21 }, year = { 2019 }, pages = { 5818 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - O. Brandt TI - Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111) JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 21 SP - 5818 PY - 2019/10/02

Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy

@article{ author = { C. Sinito and P. Corfdir and C. Pfüller and G. Gao and J. Bartolomé and S. Kölling and A. Rodil Doblado and U. Jahn and J. Lähnemann and T. Auzelle and J. K. Zettler and T. Flissikowski and P. Koenraad and H. T. Grahn and L. Geelhaar and S. Fernández-Garrido and O. Brandt }, title = { Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy }, journal = { Nano Letters }, volume = { 19 }, year = { 2019 }, pages = { 5938 } }

TY - JOUR AU - C. Sinito AU - P. Corfdir AU - C. Pfüller AU - G. Gao AU - J. Bartolomé AU - S. Kölling AU - A. Rodil Doblado AU - U. Jahn AU - J. Lähnemann AU - T. Auzelle AU - J. K. Zettler AU - T. Flissikowski AU - P. Koenraad AU - H. T. Grahn AU - L. Geelhaar AU - S. Fernández-Garrido AU - O. Brandt TI - Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 19 SP - 5938 PY - 2019/08/06

Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in a nanowire ensemble

@article{ author = { D. van Treeck and J. Ledig and G. Scholz and J. Lähnemann and M. Musolino and A. Tahraoui and O. Brandt and A. Waag and H. Riechert and L. Geelhaar }, title = { Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in a nanowire ensemble }, journal = { Beilstein Journal of Nanotechnology }, volume = { 10 }, year = { 2019 }, pages = { 1177 } }

TY - JOUR AU - D. van Treeck AU - J. Ledig AU - G. Scholz AU - J. Lähnemann AU - M. Musolino AU - A. Tahraoui AU - O. Brandt AU - A. Waag AU - H. Riechert AU - L. Geelhaar TI - Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in a nanowire ensemble JF - Beilstein Journal of Nanotechnology JA - Beilstein J. Nanotechnol. J1 - VL - 10 SP - 1177 PY - 2019/06/05

Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene

@article{ author = { L. Mancini and M. Morassi and C. Sinito and O. Brandt and L. Geelhaar and H.G. Song and Y.H. Cho and N. Guan and A. Madouri and C. Barbier and L. Largeau and A. Babichev and F.H. Julien and L. Travers and F. Oehler and N. Gogneau and J.C. Harmand and M. Tchernycheva }, title = { Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene }, journal = { Nanotechnology }, volume = { 30 }, year = { 2019 }, pages = { 214005 } }

TY - JOUR AU - L. Mancini AU - M. Morassi AU - C. Sinito AU - O. Brandt AU - L. Geelhaar AU - H.G. Song AU - Y.H. Cho AU - N. Guan AU - A. Madouri AU - C. Barbier AU - L. Largeau AU - A. Babichev AU - F.H. Julien AU - L. Travers AU - F. Oehler AU - N. Gogneau AU - J.C. Harmand AU - M. Tchernycheva TI - Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 30 SP - 214005 PY - 2019/03/14

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

@article{ author = { S. Fernández-Garrido and T. Auzelle and J. Lähnemann and K. Wimmer and A. Tahraoui and O. Brandt }, title = { Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation }, journal = { Nanoscale Advances }, volume = { 1 }, year = { 2019 }, pages = { 1893 } }

TY - JOUR AU - S. Fernández-Garrido AU - T. Auzelle AU - J. Lähnemann AU - K. Wimmer AU - A. Tahraoui AU - O. Brandt TI - Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation JF - Nanoscale Advances JA - Nanoscale Adv. J1 - VL - 1 SP - 1893 PY - 2019/03/12

Electron spin dynamics in mesoscopic GaN nanowires

@article{ author = { J. H. Buß and S. Fernández-Garrido and O. Brandt and D. Hägele and J. Rudolph }, title = { Electron spin dynamics in mesoscopic GaN nanowires }, journal = { Applied Physics Letters }, volume = { 114 }, year = { 2019 }, pages = { 092406 } }

TY - JOUR AU - J. H. Buß AU - S. Fernández-Garrido AU - O. Brandt AU - D. Hägele AU - J. Rudolph TI - Electron spin dynamics in mesoscopic GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 114 SP - 092406 PY - 2019/03/08