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Deutscher MBE Workshop 2011

Wir danken allen Teilnehmern und Teilnehmerinnen für einen interessanten und stimulierenden Workshop:

05. - 06.10.2011, Jerusalemkirche, Berlin

Deutscher MBE Workshop

Wir setzen das erfolgreiche Format dieser Reihe von Veranstaltungen fort, die zuletzt in Bochum (2009), Zürich (2008) und Jülich (2007) abgehalten wurden.

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International workshop on atomic-scale manipulation and spectroscopy (AMS 2011)

The workshop was held on October 13 and 14, 2011, at NTT Atsugi R&D center.

The workshop is organized by NTT, Japan and PDI, Germany.

We thank all participants who made this workshop a real success!

Workshop webpage
Impressum

gesetzlich vorgesehene Pflichtangaben zur Kennzeichnung und rechtliche Hinweise zur Internetpräsenz (2010)

Group-III nitrides for optoelectronics

Unit cellThe research activities for wide-gap group-III nitrides cover the investigation of GaN films with nonpolar surfaces such as the M-plane, of group-III nitride heterostructures with particular emphasis on (In,Ga)N/GaN quantum wells, and of GaN-based nanostructures. All of these structures are grown by either plasma-assisted (N2 based) or reactive (NH3 based) MBE.

Heteroepitaxial growth

Since native bulk substrates are still not commercially available for any of the group-III nitrides, one is, in most cases, forced to retreat to the use of foreign substrates. The choice of the substrate depends strongly on the actual structure one desires to fabricate. In any case, nucleation, defect formation and residual strain have to be studied for each respective materials combination. The following substrates are routinely used in our research:

  • planar growth, C-plane: Al2O3(0001), SiC(0001), GaN(0001), ZnO(0001)
  • planar growth, M-plane: γ-LiAlO2(100), SiC(1100)
  • nanocolumn growth: Si(111)

For more information on specific subjects, click on one of the following links:

GaN with nonpolar surfaces

(In,Ga)N

Nanostructures

 

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