GaN with nonpolar surfaces
Group-III heterostructures of nonpolar orientation hold great promise for the fabrication of highly efficient light-emitting diodes (LEDs) due to the absence of internal electric fields. Furthermore, the emission of these LEDs is naturally polarized, which is an attractive property for display applications. Anisotropically strained films exhibit linear dichroism over a substantial spectral range, thus enabling the realization of polarization-sensitive photodetectors.
