The ongoing miniaturization in semiconductor technology increases the demand for precise information on the structural and compositional quality of low-dimensional systems and nanomaterials. The mission of this Core Research Area is the development and combination of sophisticated experimental and theoretical tools for materials analysis on the nanometer scale. For this purpose synchrotron x-ray diffraction is carried out to investigate surfaces and interfaces in epitaxial layers and three-dimensional nanostructures during growth. After growth the structural and optical properties of as-grown materials are investigated by various electron microscopy techniques including diffraction and spectroscopy with high spatial resolution. In addition, low-temperature scanning tunneling microscopy is applied to build and analyze individual nanostructures.
The research addresses the following topics:
- Interfaces in low-dimensional heterostructures and nano-systems
- Order-disorder phenomena and phase transitions in alloys and oxides
- Structure, chemistry and mechanical properties of metastable and nano-structured systems
- Single-atom manipulation by low-temperature scanning tunneling microscopy
- M. Hanke, V.M. Kaganer, O. Bierwagen, M. Niehle, and A. Trampert, Delayed crystallization of ultrathin Gd2O3 on Si(111) observed by in vivo x-ray diffraction, Nanoscale Res. Lett. 7, 203 (2012).
- S. Fölsch, J. Yang, Ch. Nacci, Kanisawa, Atom-by-atom quantum state control in adatom chains on a semiconductor, Phys. Rev. Lett. 103, 096104-1/096104-4 (2009)
- Luna, E., A . Guzman, A. Trampert, and G. Alvarez, Critical role of
two-dimensional island-mediated growth on the formation of semiconductor
heterointerfaces, Phys. Rev. Lett. 109, 126101, 5 pages (2012).