Postdoc for MBE of (In,Ga,Al)As nanowires

PDI has a long-standing expertise in molecular beam epitaxy of III-V semiconductor layers.

For some time we have been extending these activities to the self-organized growth of nanowires. In this case, the tiny cross-section allows new epitaxial material combinations. The monolithic integration of III-V compounds on silicon is particularly exciting.

We are seeking a postdoc to strengthen our team with the goal to study the lattice relaxation in nanowire heterostructures.

You will prepattern substrates, grow samples by molecular beam epitaxy, and carry out standard material characterization. This work is part of a project funded by DFG, and dedicated samples will be used by external partners for synchrotron experiments.

You should have a PhD in physics, materials science, electrical engineering, or a related field, and experience in experimental solid state physics. Expertise in the growth of thin films or nanostructures is desirable.

We are looking for a new colleague who enjoys working in a highly motivated team of researchers and technicians.

This position is temporary. Payment is according to TVöD (Treaty for German public service). PDI is an equal opportunity employer. Therefore, female candidates are encouraged to apply and will be preferred in case of adequate qualification. Among equally qualified applicants preference will be given to disabled candidates.

Please submit your application by September 13, 2010 to

Dr. Lutz Geelhaar, geelhaar@pdi-berlin.de,

+49 30 20377-359

Paul Drude Institute, Hausvogteiplatz 5-7, D-10117 Berlin, Germany