Dual-chamber MBE system for ferromagnet/ semiconductor hybrid structures

The molecular-beam epitaxy (MBE) system (custom designed by Createc, 2-inch wafer size) employed in the field of ferromagnet-semiconductor hybrid structures consists of a sample introduction chamber, a sample exchange chamber, a III-V-semiconductor growth chamber, and a specially designed chamber for the growth of ferromagnetic metals in an As-free environment. The metal growth chamber is connected to the III-V-semiconductor growth chamber via the sample exchange chamber, maintained in ultrahigh vacuum. The III-V-semiconductor growth chamber accommodates both group III and group V sources such as Gallium, Indium, Aluminium, and Arsenic. As dopants Silicon and Berylium are available. The metal growth chamber is equipped with several effusion cells for elements such as Iron, Cobalt, Silicon, Manganese, Aluminium, and Gallium. Both the III-V-semiconductor and the metal growth chamber incorporate a reflection high-energy electron diffraction (RHEED) setup to investigate in-situ the surface structure as well as Bayard-Alpert ionization gauges as a flux monitor to control the evaporation rates. The metal growth chamber has an optional magneto-optic Kerr effect (MOKE) magnetometer for in-situ magnetic characterization.