Dual-chamber MBE system for group III-arsenides and metals
Growth chamber for group III-arsenides
VG V80H
Sources for Al, Ga, In, As, Si, Be, C
3" maximum substrate size
8 source ports
Growth control for periodic layer stacks based on in situ reflectance measurements
RHEED
Growth chamber for intermetallic alloys
VG V80H
Sources for Fe, Co, Ni, Mn, Al, Ga
3" maximum substrate size
10 source ports
RHEED
H-assisted oxide removal in connecting preparation chamber
Topics
Quantum wells, distributed Bragg reflectors (DBRs), and cavities for the investigation of spin transport mediated by surface acoustic waves
High-mobility two-dimensional electron gases (planar as well as rolled configurations)
Quantum cascade laser structures
Epitaxial intermetallic alloys on a semiconducting template


