MBE chamber for group-III antimonides (on Si)
Epitaxy of III-V compounds on Si
The first MBE machine is currently devoted to the epitaxy of III-V compounds on Si substrates. It is pumped with a combination of a turbo and an ion pump to allow the combination of solid sources and gas sources. Currently, only solid sources are loaded.
The transfer system has three chambers, the middle one of which provides additional sample storage capacity of grown samples for x-ray measurements. Like for the other systems, a small buffer chamber between the middle chamber and the growth chamber allows us to separate the growth and transfer modules for transport in and out of the diffractometer.

