MEGAEPOS
Metall-Gate-Elektroden und epitaktische Oxide als Gate-Stacks für zukünftige CMOS-Logik- und Speichergenerationen
Grundlagenuntersuchungen der MBE-Prozesse: MBE-Wachstum, Struktur und thermische Stabilität von Verbindungen und Heterostrukturen Seltener-Erd-Oxide auf Si
This three-year project financed by the Bundesministerium für Bildung und Forschung (BMBF), is dedicated to the epitaxy and structural analysis of gate oxides for future CMOS transistors. It is a collaboration between AMO Aachen, LU Hannover, TU Darmstadt, IHP Frankfurt/Oder, namlab, AMD, Qimonda and Leybold Heraeus.
The goals of this collaboration are
- screening of suitable high-k / metal gate stacks
- demonstration in device structures
- identification of process damage to integrated high-k / metal gate CMOS devices and development of alternative gentle integration processes
- proof of compatibility of the new gate stacks with CMOS process steps
Within this project, we study the structure of the epitaxial interface when growing several rare earth oxides and there alloys on Single crystal Si substrates. Our in situ x-ray diffraction capabilities allow us to analyze the structure of the stacks in detail. We aim at developing alloys and sequences of thin layers containing various rare earth oxides to improve the thermal stability and structural properties of the gate stacks.
The project homepage can be found here.
The project has started March 1st, 2007.
