Research

Research is based on the long-standing expertise of the PDI in the field of molecular-beam epitaxy (MBE), which permits the growth control on the atomic scale. The growth mechanisms, self-organization effects, morphological instabilities, and the kinetics of interface formation and interface ordering are studied to realize artificial low-dimensional semiconductor systems and nanostructured materials. The heteroepitaxy of dissimilar materials and the interface and defect engineering are utilized to generate new and distinct materials combinations and specific epitaxial orientations with tailored functionalities.

The following material systems are studied:

• 2D systems based on group III-nitrides
• 2D systems based on group III-arsenides
  
• Ferromagnet/semiconductor hybrid structures: Heusler alloys (Fe₃Si, Co₂FeSi) on GaAs and on Si
• Nanowires
• Synchrotron studies
         Epitaxy of III-V materials on Si
         Epitaxial phase change materials
         Epitaxy of rare-earth oxides on Si