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Deutscher MBE Workshop 2011

Wir danken allen Teilnehmern und Teilnehmerinnen für einen interessanten und stimulierenden Workshop:

05. - 06.10.2011, Jerusalemkirche, Berlin

Deutscher MBE Workshop

Wir setzen das erfolgreiche Format dieser Reihe von Veranstaltungen fort, die zuletzt in Bochum (2009), Zürich (2008) und Jülich (2007) abgehalten wurden.

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International workshop on atomic-scale manipulation and spectroscopy (AMS 2011)

The workshop was held on October 13 and 14, 2011, at NTT Atsugi R&D center.

The workshop is organized by NTT, Japan and PDI, Germany.

We thank all participants who made this workshop a real success!

Workshop webpage
Impressum

gesetzlich vorgesehene Pflichtangaben zur Kennzeichnung und rechtliche Hinweise zur Internetpräsenz (2010)

Epitaxial phase change materials

GST on GaSb

Phase change materials such as Ge2Sb2Te5 (GST) are currently investigated as a replacement for FLASH memory and even as (PC)RAM. The reason is their fast switching speed and good scalability. Despite their widespread use e.g. in rewritable DVD technology, the detailed mechanism of the transition between the crystalline and the amorphous state is not yet understood.

We grow epitaxial layers of GST and analyze their structure using in situ x-ray diffraction. The phase transition is induced either by annealing or by applying a high-power laser pulse. By synthesizing MBE purity material with epitaxy-induced long-range order, we intend to clarify the role of GST's intrinsic vacancies in the switching process.

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