Epitaxy of III-V materials on Si

With this machine, we currently investigate growth modes of III-V semiconductors on Si. III-V channels hold promise for improved performance in future CMOS devices. For integration with the established technology, such III-V channels will need to be fabricated on Si.
We investigate the growth modes of various compound semiconductors on Si, starting with antimonides. By analyzing the heterointerface formation in situ and on the atomic scale, we want to understand the formation of defects like inversion domain boundaries and dislocations and develop strategies to fabricate thin high-quality III-V layers on Si for economic device production.