Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and J. Herfort }, title = { Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S }, journal = { Journal of Alloys and Compounds }, volume = { 858 }, year = { 2021 }, pages = { 157709 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - J. Herfort TI - Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 858 SP - 157709 PY - 2021/01/28

Effects of disorder on magnetotransport oscillations in a two-dimensional electron gas terminated by superconductors

@article{ author = { Y. Takagaki }, title = { Effects of disorder on magnetotransport oscillations in a two-dimensional electron gas terminated by superconductors }, journal = { Journal of Applied Physics }, volume = { 128 }, year = { 2020 }, pages = { 024304 } }

TY - JOUR AU - Y. Takagaki TI - Effects of disorder on magnetotransport oscillations in a two-dimensional electron gas terminated by superconductors JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 128 SP - 024304 PY - 2020/07/14

Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and A. Trampert }, title = { Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys }, journal = { Journal of Alloys and Compounds }, volume = { 824 }, year = { 2020 }, pages = { 153880 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - A. Trampert TI - Interfacial resistance switching characteristics in metal-chalcogenide junctions using Bi-Cu-Se, Bi-Ag-Se, and Sb-Cu-Te alloys JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 824 SP - 153880 PY - 2020/01/24

Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111)

@article{ author = { Y. Takagaki and B. Jenichen and O. Brandt }, title = { Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111) }, journal = { CrystEngComm }, volume = { 21 }, year = { 2019 }, pages = { 5818 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - O. Brandt TI - Semicoherent growth of single-crystal beta-In2S3 layers on InP(111) and InAs(111) JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 21 SP - 5818 PY - 2019/10/02

Commensurability and quantum interference magnetotransport oscillations in a two-dimensional electron gas sandwiched by superconductors

@article{ author = { Y. Takagaki }, title = { Commensurability and quantum interference magnetotransport oscillations in a two-dimensional electron gas sandwiched by superconductors }, journal = { Journal of Physics: Condensed Matter }, volume = { 31 }, year = { 2019 }, pages = { 485301 } }

TY - JOUR AU - Y. Takagaki TI - Commensurability and quantum interference magnetotransport oscillations in a two-dimensional electron gas sandwiched by superconductors JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 31 SP - 485301 PY - 2019/09/05

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen and A. Trampert }, title = { Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions }, journal = { Journal of Physics D: Applied Physics }, volume = { 52 }, year = { 2019 }, pages = { 385101 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen AU - A. Trampert TI - Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 52 SP - 385101 PY - 2019/07/15

Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends

@article{ author = { V. Hortelano and H. Weidlich and W. T. Masselink and Y. Takagaki }, title = { Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends }, journal = { Journal of Applied Physics }, volume = { 125 }, year = { 2019 }, pages = { 145301 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - W. T. Masselink AU - Y. Takagaki TI - Magnetic-field-induced transport asymmetry in two-terminal circular ballistic bends JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 125 SP - 145301 PY - 2019/04/08

Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates

@article{ author = { Y. Takagaki and M. Ramsteiner and U. Jahn and B. Jenichen }, title = { Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates }, journal = { Journal of Solid State Chemistry }, volume = { 270 }, year = { 2018 }, pages = { 219 } }

TY - JOUR AU - Y. Takagaki AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen TI - Constituent substitution in hot wall deposition of Bi2S3 films by reaction with substrates JF - Journal of Solid State Chemistry JA - J. Solid State Chem. J1 - VL - 270 SP - 219 PY - 2018/11/29

Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers

@article{ author = { Y. Takagaki and J. Herfort and M. Ramsteiner and U. Jahn and B. Jenichen }, title = { Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 4173 } }

TY - JOUR AU - Y. Takagaki AU - J. Herfort AU - M. Ramsteiner AU - U. Jahn AU - B. Jenichen TI - Overgrowth of Bi2Te3 nanosheets on Fe-based epitaxial ferromagnetic layers JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 4173 PY - 2018/07/24

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

@article{ author = { V. Hortelano and H. Weidlich and M.P. Semtsiv and W. T. Masselink and M. Ramsteiner and U. Jahn and K. Biermann and Y. Takagaki }, title = { Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151602 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - M.P. Semtsiv AU - W. T. Masselink AU - M. Ramsteiner AU - U. Jahn AU - K. Biermann AU - Y. Takagaki TI - Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151602 PY - 2018/04/10