Electronic Properties of Graphene Encapsulated with Different Two- Dimensional Atomic Crystals

@article{ author = { A. V. Kretinin and Y. Cao and J. S. Tu and G. L. Yu and R. Jalil and K. S. Novoselov and S. J. Haigh and A. Gholinia and A. Mishchenko and M. Lozada and T. Georgiou and C. R. Woods and F. Withers and P. Blake and G. Eda and A. Wirsig and C. Hucho and K. Watanabe and T. Taniguchi and A. K. Geim and R. V. Gorbachev }, title = { Electronic Properties of Graphene Encapsulated with Different Two- Dimensional Atomic Crystals }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 3270 } }

TY - JOUR AU - A. V. Kretinin AU - Y. Cao AU - J. S. Tu AU - G. L. Yu AU - R. Jalil AU - K. S. Novoselov AU - S. J. Haigh AU - A. Gholinia AU - A. Mishchenko AU - M. Lozada AU - T. Georgiou AU - C. R. Woods AU - F. Withers AU - P. Blake AU - G. Eda AU - A. Wirsig AU - C. Hucho AU - K. Watanabe AU - T. Taniguchi AU - A. K. Geim AU - R. V. Gorbachev TI - Electronic Properties of Graphene Encapsulated with Different Two- Dimensional Atomic Crystals JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 3270 PY - 2014/05/20

Synthesis of SmB6 films by Mg-assisted solid state reaction

@article{ author = { Y. Takagaki and A. Wirsig and M. Ramsteiner and B. Jenichen and U. Jahn }, title = { Synthesis of SmB6 films by Mg-assisted solid state reaction }, journal = { Semiconductor Science and Technology }, volume = { 29 }, year = { 2014 }, pages = { 075016 } }

TY - JOUR AU - Y. Takagaki AU - A. Wirsig AU - M. Ramsteiner AU - B. Jenichen AU - U. Jahn TI - Synthesis of SmB6 films by Mg-assisted solid state reaction JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 29 SP - 075016 PY - 2014/05/16

Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide

@article{ author = { Y. Takagaki and A. Wirsig and M. Ramsteiner and R. Hey and C. Hucho }, title = { Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide }, journal = { Semiconductor Science and Technology }, volume = { 26 }, year = { 2011 }, pages = { 045003 } }

TY - JOUR AU - Y. Takagaki AU - A. Wirsig AU - M. Ramsteiner AU - R. Hey AU - C. Hucho TI - Electrical double layer gating in GaAs-(Al,Ga)As heterostructures using tetrabutylammonium bis(trifluoromethylsulfonyl)imide JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 26 SP - 045003 PY - 2011/01/01