Ordered structure of FeGe2 formed during solid-phase epitaxy

@article{ author = { B. Jenichen and M. Hanke and S. Gaucher and A. Trampert and J. Herfort and H. Kirmse and B. Haas and E. Willinger and X. Huang and S. C. Erwin }, title = { Ordered structure of FeGe2 formed during solid-phase epitaxy }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { 051402 } }

TY - JOUR AU - B. Jenichen AU - M. Hanke AU - S. Gaucher AU - A. Trampert AU - J. Herfort AU - H. Kirmse AU - B. Haas AU - E. Willinger AU - X. Huang AU - S. C. Erwin TI - Ordered structure of FeGe2 formed during solid-phase epitaxy JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 2 SP - 051402 PY - 2018/05/21

Quantum confinement of exciton-polaritons in structured (Al,Ga)As microcavities

@article{ author = { A. S. Kuznetsov and P. L. J. Helgers and K. Biermann and P. V. Santos }, title = { Quantum confinement of exciton-polaritons in structured (Al,Ga)As microcavities }, journal = { Physical Review B: Solid State }, volume = { 97 }, year = { 2018 }, pages = { 195309 } }

TY - JOUR AU - A. S. Kuznetsov AU - P. L. J. Helgers AU - K. Biermann AU - P. V. Santos TI - Quantum confinement of exciton-polaritons in structured (Al,Ga)As microcavities JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - PRB VL - 97 SP - 195309 PY - 2018/05/18

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

@article{ author = { M. Budde and C. Tschammer and P. Franz and J. Feldl and M. Ramsteiner and R. Goldhahn and M. Feneberg and N. Barsan and A. Oprea and O. Bierwagen }, title = { Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy }, journal = { Journal of Applied Physics }, volume = { 123 }, year = { 2018 }, pages = { 195301 } }

TY - JOUR AU - M. Budde AU - C. Tschammer AU - P. Franz AU - J. Feldl AU - M. Ramsteiner AU - R. Goldhahn AU - M. Feneberg AU - N. Barsan AU - A. Oprea AU - O. Bierwagen TI - Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 123 SP - 195301 PY - 2018/05/15

Growth of boron-doped graphene by molecular beam epitaxy

@article{ author = { G.V. Soares and S. Nakhaie and M. Heilmann and H. Riechert and J. M. J. Lopes }, title = { Growth of boron-doped graphene by molecular beam epitaxy }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 163103 } }

TY - JOUR AU - G.V. Soares AU - S. Nakhaie AU - M. Heilmann AU - H. Riechert AU - J. M. J. Lopes TI - Growth of boron-doped graphene by molecular beam epitaxy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 163103 PY - 2018/04/17

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys

@article{ author = { J.E. Boschker and X. Lü and V. Bragaglia and R. Wang and H. T. Grahn and R. Calarco }, title = { Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys }, journal = { Scientific Reports }, volume = { 8 }, year = { 2018 }, pages = { 5889 } }

TY - JOUR AU - J.E. Boschker AU - X. Lü AU - V. Bragaglia AU - R. Wang AU - H. T. Grahn AU - R. Calarco TI - Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 8 SP - 5889 PY - 2018/04/12

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

@article{ author = { V. Hortelano and H. Weidlich and M.P. Semtsiv and W. T. Masselink and M. Ramsteiner and U. Jahn and K. Biermann and Y. Takagaki }, title = { Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151602 } }

TY - JOUR AU - V. Hortelano AU - H. Weidlich AU - M.P. Semtsiv AU - W. T. Masselink AU - M. Ramsteiner AU - U. Jahn AU - K. Biermann AU - Y. Takagaki TI - Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151602 PY - 2018/04/10

Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications

@article{ author = { E. Luna and O. Delorme and L. Cerutti and E. Tournie and J.-B. Rodriguez and A. Trampert }, title = { Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 151905 } }

TY - JOUR AU - E. Luna AU - O. Delorme AU - L. Cerutti AU - E. Tournie AU - J.-B. Rodriguez AU - A. Trampert TI - Microstructure and Interface Analysis of Emerging Ga(Sb,Bi) Epilayers and Ga(Sb,Bi)/GaSb Quantum Wells for Optoelectronic Applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 151905 PY - 2018/04/10

Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures

@article{ author = { R. B. Lewis and P. Corfdir and H. Küpers and T. Flissikowski and O. Brandt and L. Geelhaar }, title = { Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2343 } }

TY - JOUR AU - R. B. Lewis AU - P. Corfdir AU - H. Küpers AU - T. Flissikowski AU - O. Brandt AU - L. Geelhaar TI - Nanowires bending over backward from strain partitioning in asymmetric core-shell heterostructures JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2343 PY - 2018/03/23

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

@article{ author = { V. M. Kaganer and K. K. Sabelfeld and O. Brandt }, title = { Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 122101 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld AU - O. Brandt TI - Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 122101 PY - 2018/03/19

One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure

@article{ author = { R. Addou and C. M. Smyth and J.-Y. Noh and Y.-C. Lin and Y. Pan and S. M. Eichfeld and S. Fölsch and R. M. Feenstra and J. A. Robinson and K. Cho and R. M. Wallace }, title = { One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure }, journal = { 2D Materials }, volume = { 5 }, year = { 2018 }, pages = { 025017 } }

TY - JOUR AU - R. Addou AU - C. M. Smyth AU - J.-Y. Noh AU - Y.-C. Lin AU - Y. Pan AU - S. M. Eichfeld AU - S. Fölsch AU - R. M. Feenstra AU - J. A. Robinson AU - K. Cho AU - R. M. Wallace TI - One Dimensional Metallic Edges in Atomically Thin WSe2 Induced by Air Exposure JF - 2D Materials JA - 2D Mater. J1 - VL - 5 SP - 025017 PY - 2018/03/08

Doppler-free spectroscopy with a terahertz quantum-cascade laser

@article{ author = { M. Wienold and T. Alam and L. Schrottke and H. T. Grahn and H.-W. Hübers }, title = { Doppler-free spectroscopy with a terahertz quantum-cascade laser }, journal = { Optics Express }, volume = { 26 }, year = { 2018 }, pages = { 6692 } }

TY - JOUR AU - M. Wienold AU - T. Alam AU - L. Schrottke AU - H. T. Grahn AU - H.-W. Hübers TI - Doppler-free spectroscopy with a terahertz quantum-cascade laser JF - Optics Express JA - Opt. Express J1 - VL - 26 SP - 6692 PY - 2018/03/05

The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications

@article{ author = { O. Bierwagen and Zbigniew Galazka }, title = { The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 092105 } }

TY - JOUR AU - O. Bierwagen AU - Zbigniew Galazka TI - The inherent transport anisotropy of rutile tin dioxide (SnO2) determined by van der Pauw measurements and its consequences for applications JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 092105 PY - 2018/02/27

Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene

@article{ author = { S. Fernández-Garrido and M. Ramsteiner and L. A. Galves and C. Sinito and J. M. J. Lopes and L. Geelhaar and O. Brandt }, title = { Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene }, journal = { Proceedings of SPIE }, volume = { 10532 }, year = { 2018 }, pages = { 105321U } }

TY - JOUR AU - S. Fernández-Garrido AU - M. Ramsteiner AU - L. A. Galves AU - C. Sinito AU - J. M. J. Lopes AU - L. Geelhaar AU - O. Brandt TI - Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 10532 SP - 105321U PY - 2018/02/23

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

@article{ author = { J. Kellner and G. Bihlmayer and M. Liebmann and S. Otto and C. Pauly and J. E. Boschker and V. Bragaglia and S. Cecchi and R. N. Wang and V. L. Deringer and P. Kueppers and P. Bhaskar and E. Golias and J. Sanchez-Barriga and R. Dronskowski and T. Fauster and O. Rader and R. Calarco and M. Morgenstern }, title = { Mapping the band structure of GeSbTe phase change alloys around the Fermi level }, journal = { Nature Communications Physics }, volume = { 1 }, year = { 2018 }, pages = { 5 } }

TY - JOUR AU - J. Kellner AU - G. Bihlmayer AU - M. Liebmann AU - S. Otto AU - C. Pauly AU - J. E. Boschker AU - V. Bragaglia AU - S. Cecchi AU - R. N. Wang AU - V. L. Deringer AU - P. Kueppers AU - P. Bhaskar AU - E. Golias AU - J. Sanchez-Barriga AU - R. Dronskowski AU - T. Fauster AU - O. Rader AU - R. Calarco AU - M. Morgenstern TI - Mapping the band structure of GeSbTe phase change alloys around the Fermi level JF - Nature Communications Physics JA - J1 - ISSN 2399-3650 VL - 1 SP - 5 PY - 2018/02/22

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

@article{ author = { S. Lazic and E. Chernysheva and A. Hernández-Mínguez and P. V. Santos and H. P. van der Meulen }, title = { Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures }, journal = { Journal of Physics D: Applied Physics }, volume = { 51 }, year = { 2018 }, pages = { 104001 } }

TY - JOUR AU - S. Lazic AU - E. Chernysheva AU - A. Hernández-Mínguez AU - P. V. Santos AU - H. P. van der Meulen TI - Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 51 SP - 104001 PY - 2018/02/15

Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111)

@article{ author = { Y. Takagaki and B. Jenichen and A. Trampert }, title = { Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111) }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 983 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - A. Trampert TI - Manifestation of axiotaxy induced by the (1-104) plane in high-temperature-grown bismuth telluride films on InP(111) JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 983 PY - 2018/02/12

Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers

@article{ author = { Y. Pan and S. Fölsch and Y. Nie and D. Waters and Y.-C. Lin and B. Jariwala and K. Zhang and K. Cho and J. A. Robinson and R. M. Feenstra }, title = { Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 1849 } }

TY - JOUR AU - Y. Pan AU - S. Fölsch AU - Y. Nie AU - D. Waters AU - Y.-C. Lin AU - B. Jariwala AU - K. Zhang AU - K. Cho AU - J. A. Robinson AU - R. M. Feenstra TI - Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 1849 PY - 2018/02/07

2D or not 2D: Strain tuning in weakly coupled heterostructures

@article{ author = { R. Wang and F. R. L. Lange and S. Cecchi and M. Hanke and M. Wuttig and R. Calarco }, title = { 2D or not 2D: Strain tuning in weakly coupled heterostructures }, journal = { Advanced Functional Materials }, volume = { }, year = { 2018 }, pages = { 1 } }

TY - JOUR AU - R. Wang AU - F. R. L. Lange AU - S. Cecchi AU - M. Hanke AU - M. Wuttig AU - R. Calarco TI - 2D or not 2D: Strain tuning in weakly coupled heterostructures JF - Advanced Functional Materials JA - Adv. Funct. Mater. J1 - VL - SP - 1 PY - 2018/01/31

Ferroelectric Control of the Spin Texture in GeTe

@article{ author = { C. Rinaldi and S. Varotto and M. Asa and J. Slawinska and J. Fujii and G. Vinai and S. Cecchi and D. Di Sante and R. Calarco and I. Vobornik and G. Panaccione and S. Picozzi and R. Bertacco }, title = { Ferroelectric Control of the Spin Texture in GeTe }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 2751 } }

TY - JOUR AU - C. Rinaldi AU - S. Varotto AU - M. Asa AU - J. Slawinska AU - J. Fujii AU - G. Vinai AU - S. Cecchi AU - D. Di Sante AU - R. Calarco AU - I. Vobornik AU - G. Panaccione AU - S. Picozzi AU - R. Bertacco TI - Ferroelectric Control of the Spin Texture in GeTe JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 2751 PY - 2018/01/30

Electronic and transport properties of Li-doped NiO epitaxial thin films

@article{ author = { J. Y. Zhang and W. W. Li and R. L. Z. Hoye and J. L. MacManus-Driscoll and M. Budde and O. Bierwagen and L. Wang and Y. Du and M. J. Wahila and L. F. J. Piper and T.-L. Lee and H. J. Edwards and V. R. Dhanak and K. H. L. Zhang }, title = { Electronic and transport properties of Li-doped NiO epitaxial thin films }, journal = { Journal of Materials Chemistry C }, volume = { tbd }, year = { 2018 }, pages = { tbd } }

TY - JOUR AU - J. Y. Zhang AU - W. W. Li AU - R. L. Z. Hoye AU - J. L. MacManus-Driscoll AU - M. Budde AU - O. Bierwagen AU - L. Wang AU - Y. Du AU - M. J. Wahila AU - L. F. J. Piper AU - T.-L. Lee AU - H. J. Edwards AU - V. R. Dhanak AU - K. H. L. Zhang TI - Electronic and transport properties of Li-doped NiO epitaxial thin films JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - tbd SP - tbd PY - 2018/01/25

Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials

@article{ author = { J. C. Lin and B. Jariwala and B. M. Bersch and K. Xu and Y. Ni and B. Wang and S. M. Eichfeld and X. Zhang and T. H. Choudhury and Y. Pan and R. Addou and C. M. Smyth and J. Li and K. Zhang and A. Haque and S. Fölsch and R. M. Feenstra and R. M. Wallace and K. Cho and S. K. Fullerton-Shire and J. M. Redwing and J. A. Robinson }, title = { Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials }, journal = { ACS Nano }, volume = { 12 }, year = { 2018 }, pages = { 965 } }

TY - JOUR AU - J. C. Lin AU - B. Jariwala AU - B. M. Bersch AU - K. Xu AU - Y. Ni AU - B. Wang AU - S. M. Eichfeld AU - X. Zhang AU - T. H. Choudhury AU - Y. Pan AU - R. Addou AU - C. M. Smyth AU - J. Li AU - K. Zhang AU - A. Haque AU - S. Fölsch AU - R. M. Feenstra AU - R. M. Wallace AU - K. Cho AU - S. K. Fullerton-Shire AU - J. M. Redwing AU - J. A. Robinson TI - Realizing Large-Scale, Electronic-Grade Two-Dimensional Materials JF - ACS Nano JA - ACS Nano J1 - VL - 12 SP - 965 PY - 2018/01/23

Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

@article{ author = { M. Heilmann and M. Bashouti and H. Riechert and J. M. J. Lopes }, title = { Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene }, journal = { 2D Materials }, volume = { 5 }, year = { 2018 }, pages = { 025004 } }

TY - JOUR AU - M. Heilmann AU - M. Bashouti AU - H. Riechert AU - J. M. J. Lopes TI - Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene JF - 2D Materials JA - 2D Mater. J1 - VL - 5 SP - 025004 PY - 2018/01/15

Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation

@article{ author = { J. Momand and J. E. Boschker and R. Wang and R. Calarco and B. J. Kooi }, title = { Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation }, journal = { CrystEngComm }, volume = { 20 }, year = { 2018 }, pages = { 340 } }

TY - JOUR AU - J. Momand AU - J. E. Boschker AU - R. Wang AU - R. Calarco AU - B. J. Kooi TI - Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation JF - CrystEngComm JA - CrystEngComm J1 - ISSN 1466-8033 VL - 20 SP - 340 PY - 2018/01/14

Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces

@article{ author = { P. Corfdir and H. Li and O. Marquardt and G. Gao and M. R. Molas and J. K. Zettler and D. v. Treeck and T. Flissikowski and M. Potemski and C. Draxl and A. Trampert and S. Fernández-Garrido and H. T. Grahn and O. Brandt }, title = { Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 247 } }

TY - JOUR AU - P. Corfdir AU - H. Li AU - O. Marquardt AU - G. Gao AU - M. R. Molas AU - J. K. Zettler AU - D. v. Treeck AU - T. Flissikowski AU - M. Potemski AU - C. Draxl AU - A. Trampert AU - S. Fernández-Garrido AU - H. T. Grahn AU - O. Brandt TI - Crystal-phase quantum wires: One-dimensional heterostructures with atomically flat interfaces JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 247 PY - 2018/01/10

Doping of Self-Catalyzed Nanowires under the Influence of Droplets

@article{ author = { Yunyan Zhang and Zhiyuan Sun and Ana Sanchez and M. Ramsteiner and Martin Aagesen and Jiang Wu and Dongyoung Kim and Pamela Jurczak and Suguo Huo and Lincoln Lauhon and Huiyun Liu }, title = { Doping of Self-Catalyzed Nanowires under the Influence of Droplets }, journal = { Nano Letters }, volume = { 18 }, year = { 2018 }, pages = { 81 } }

TY - JOUR AU - Yunyan Zhang AU - Zhiyuan Sun AU - Ana Sanchez AU - M. Ramsteiner AU - Martin Aagesen AU - Jiang Wu AU - Dongyoung Kim AU - Pamela Jurczak AU - Suguo Huo AU - Lincoln Lauhon AU - Huiyun Liu TI - Doping of Self-Catalyzed Nanowires under the Influence of Droplets JF - Nano Letters JA - Nano Lett. J1 - VL - 18 SP - 81 PY - 2018/01/10

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C

@article{ author = { C. Chèze and F. Feix and J. Lähnemann and T. Flissikowski and M. Krysko and P. Wolny and H. Turski and C. Skierbiszewski and O. Brandt }, title = { Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C }, journal = { Applied Physics Letters }, volume = { 112 }, year = { 2018 }, pages = { 022102 } }

TY - JOUR AU - C. Chèze AU - F. Feix AU - J. Lähnemann AU - T. Flissikowski AU - M. Krysko AU - P. Wolny AU - H. Turski AU - C. Skierbiszewski AU - O. Brandt TI - Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 112 SP - 022102 PY - 2018/01/08

Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells

@article{ author = { L. Lymperakis and T. Schulz and C. Freysoldt and M. Anikeeva and Z. Chen and X. Zheng and B. Shen and C. Chèze and M. Siekacz and X. Q. Wang and M. Albrecht and J. Neugebauer }, title = { Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells }, journal = { Physical Review Materials }, volume = { 2 }, year = { 2018 }, pages = { no. } }

TY - JOUR AU - L. Lymperakis AU - T. Schulz AU - C. Freysoldt AU - M. Anikeeva AU - Z. Chen AU - X. Zheng AU - B. Shen AU - C. Chèze AU - M. Siekacz AU - X. Q. Wang AU - M. Albrecht AU - J. Neugebauer TI - Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells JF - Physical Review Materials JA - PRMaterials J1 - 2475-9953 VL - 2 SP - no. PY - 2018/01/08

Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films

@article{ author = { D. v. Treeck and G. Calabrese and J. Goertz and V. M. Kaganer and O. Brandt and S. Fernández-Garrido and L. Geelhaar }, title = { Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films }, journal = { Nano Research }, volume = { 11, Issue 1 }, year = { 2018 }, pages = { 565 } }

TY - JOUR AU - D. v. Treeck AU - G. Calabrese AU - J. Goertz AU - V. M. Kaganer AU - O. Brandt AU - S. Fernández-Garrido AU - L. Geelhaar TI - Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films JF - Nano Research JA - Nano Res. J1 - VL - 11, Issue 1 SP - 565 PY - 2018/01/01

Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor

@article{ author = { G.K. Rolim and S.A. Correa and L. A. Galves and J. M. J. Lopes and G.V. Soares and C. Radtke }, title = { Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor }, journal = { Applied Surface Science }, volume = { 427 }, year = { 2018 }, pages = { 825 } }

TY - JOUR AU - G.K. Rolim AU - S.A. Correa AU - L. A. Galves AU - J. M. J. Lopes AU - G.V. Soares AU - C. Radtke TI - Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 427 SP - 825 PY - 2018/01/01

Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films

@article{ author = { D. Braun and M. Schmidbauer and M. Hanke and J. Schwarzkopf }, title = { Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films }, journal = { Nanotechnology }, volume = { 29 }, year = { 2018 }, pages = { 015701 } }

TY - JOUR AU - D. Braun AU - M. Schmidbauer AU - M. Hanke AU - J. Schwarzkopf TI - Hierarchy and scaling behavior of multi-rank domain patterns in ferroelectric K0.9Na0.1NbO3 strained films JF - Nanotechnology JA - Nanotechnol. J1 - NAN VL - 29 SP - 015701 PY - 2018/01/01

Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces

@article{ author = { T. Berthold and S. Katzer and J. Rombach and S. Krischok and O. Bierwagen and M. Himmerlich }, title = { Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces }, journal = { Physica Status Solidi B }, volume = { tbd }, year = { 2018 }, pages = { tbd } }

TY - JOUR AU - T. Berthold AU - S. Katzer AU - J. Rombach AU - S. Krischok AU - O. Bierwagen AU - M. Himmerlich TI - Towards understanding the cross sensitivity of In2O3-based ozone sensors: Effects of O3, O2 and H2O adsorption at In2O3(111) surfaces JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - tbd SP - tbd PY - 2018/01/01

Quantum fluids of light in acoustic lattices

@article{ author = { E A Cerda-Méndez and D. N. Krizhanovskii and M. S. Skolnick and P. V. Santos }, title = { Quantum fluids of light in acoustic lattices }, journal = { Journal of Physics D: Applied Physics }, volume = { 51 }, year = { 2018 }, pages = { 033001 } }

TY - JOUR AU - E A Cerda-Méndez AU - D. N. Krizhanovskii AU - M. S. Skolnick AU - P. V. Santos TI - Quantum fluids of light in acoustic lattices JF - Journal of Physics D: Applied Physics JA - J. Phys. D J1 - JPD VL - 51 SP - 033001 PY - 2018/01/01