Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene

@article{ author = { J. M. J. Lopes and D. Czubak and E. Zallo and A.I. Figueroa and C. Guillemard and M. Valvidares and J.R. Zuazo and J. López-Sanchéz and S.O. Valenzuela and M. Hanke and M. Ramsteiner }, title = { Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene }, journal = { 2D Materials }, volume = { 8 }, year = { 2021 }, pages = { 041001 } }

TY - JOUR AU - J. M. J. Lopes AU - D. Czubak AU - E. Zallo AU - A.I. Figueroa AU - C. Guillemard AU - M. Valvidares AU - J.R. Zuazo AU - J. López-Sanchéz AU - S.O. Valenzuela AU - M. Hanke AU - M. Ramsteiner TI - Large-area van der Waals epitaxy and magnetic characterization of Fe 3 GeTe 2 films on graphene JF - 2D Materials JA - 2D Mater. J1 - VL - 8 SP - 041001 PY - 2021/08/11

Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam

@article{ author = { M. Heilmann and V. Deinhart and A. Tahraoui and K. Höflich and J. M. J. Lopes }, title = { Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam }, journal = { npj 2D Materials and Applications }, volume = { 5 }, year = { 2021 }, pages = { 70 } }

TY - JOUR AU - M. Heilmann AU - V. Deinhart AU - A. Tahraoui AU - K. Höflich AU - J. M. J. Lopes TI - Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam JF - npj 2D Materials and Applications JA - npj 2D Mater. Appl. J1 - VL - 5 SP - 70 PY - 2021/08/02

Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films

@article{ author = { J. Feldl and Martin Feneberg and A. Papadogianni and J. Lähnemann and Takahiro Nagata and O. Bierwagen and Rüdiger Goldhahn and M. Ramsteiner }, title = { Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films }, journal = { Applied Physics Letters }, volume = { 119 }, year = { 2021 }, pages = { 042101 } }

TY - JOUR AU - J. Feldl AU - Martin Feneberg AU - A. Papadogianni AU - J. Lähnemann AU - Takahiro Nagata AU - O. Bierwagen AU - Rüdiger Goldhahn AU - M. Ramsteiner TI - Band gap widening and phonon behavior of cubic single-crystalline (In,Ga)2O3 alloy films JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 119 SP - 042101 PY - 2021/07/29

Polaronic interaction in a single modulation-doped GaAs quantum well with the Feynman-Hellwarth-Iddings-Platzman approximation

@article{ author = { G. Martinez and J. Wyzula and I. Mohelsky and C. Faugeras and M. Orlita and M. Potemski and A. Riedel and R. Hey and K. J. Friedland }, title = { Polaronic interaction in a single modulation-doped GaAs quantum well with the Feynman-Hellwarth-Iddings-Platzman approximation }, journal = { Physical Review B: Solid State }, volume = { 104 }, year = { 2021 }, pages = { 045312 } }

TY - JOUR AU - G. Martinez AU - J. Wyzula AU - I. Mohelsky AU - C. Faugeras AU - M. Orlita AU - M. Potemski AU - A. Riedel AU - R. Hey AU - K. J. Friedland TI - Polaronic interaction in a single modulation-doped GaAs quantum well with the Feynman-Hellwarth-Iddings-Platzman approximation JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 104 SP - 045312 PY - 2021/07/23

Electron microscopy study of surface islands in epitaxial Ge3Sb2Te6 layer grown on a silicon substrate

@article{ author = { Y. S. Zaytseva and N. I. Borgardt and A. S. Prikhodko and E. Zallo and R. Calarco }, title = { Electron microscopy study of surface islands in epitaxial Ge3Sb2Te6 layer grown on a silicon substrate }, journal = { Crystallography reports }, volume = { 66 }, year = { 2021 }, pages = { 687 } }

TY - JOUR AU - Y. S. Zaytseva AU - N. I. Borgardt AU - A. S. Prikhodko AU - E. Zallo AU - R. Calarco TI - Electron microscopy study of surface islands in epitaxial Ge3Sb2Te6 layer grown on a silicon substrate JF - Crystallography reports JA - Crystallogr. Rep. J1 - 1562-689X VL - 66 SP - 687 PY - 2021/07/23

Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon

@article{ author = { V. M. Kaganer and I. Petrov and L.Samoylova }, title = { Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon }, journal = { Acta Crystallographica A }, volume = { 77 }, year = { 2021 }, pages = { 268 } }

TY - JOUR AU - V. M. Kaganer AU - I. Petrov AU - L.Samoylova TI - Resolution of a bent-crystal spectrometer for X-ray free electron laser pulses: diamond vs. silicon JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 77 SP - 268 PY - 2021/06/29

Quantum magnetotransport oscillations in graphene nanoribbons coupled to superconductors

@article{ author = { Y. Takagaki }, title = { Quantum magnetotransport oscillations in graphene nanoribbons coupled to superconductors }, journal = { Journal of Physics: Condensed Matter }, volume = { 33 }, year = { 2021 }, pages = { 255301 } }

TY - JOUR AU - Y. Takagaki TI - Quantum magnetotransport oscillations in graphene nanoribbons coupled to superconductors JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 33 SP - 255301 PY - 2021/05/27

Impact of electrical current on single GaAs nanowire structure

@article{ author = { D. Bahrami and A. Al Hassan and A. Davtyan and R. Zhe and T. Anjum and J. Herranz and L. Geelhaar and D. V. Novikov and R. Timm and U. Pietsch }, title = { Impact of electrical current on single GaAs nanowire structure }, journal = { Physica Status Solidi B }, volume = { tba }, year = { 2021 }, pages = { xxx } }

TY - JOUR AU - D. Bahrami AU - A. Al Hassan AU - A. Davtyan AU - R. Zhe AU - T. Anjum AU - J. Herranz AU - L. Geelhaar AU - D. V. Novikov AU - R. Timm AU - U. Pietsch TI - Impact of electrical current on single GaAs nanowire structure JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - tba SP - xxx PY - 2021/05/20

Charge storage in metal-chalcogenide bilayer junctions

@article{ author = { Y. Takagaki }, title = { Charge storage in metal-chalcogenide bilayer junctions }, journal = { Journal of Physics D: Applied Physics }, volume = { 54 }, year = { 2021 }, pages = { 295105 } }

TY - JOUR AU - Y. Takagaki TI - Charge storage in metal-chalcogenide bilayer junctions JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 54 SP - 295105 PY - 2021/05/14

Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx

@article{ author = { T. Auzelle and M. Azadmand and T. Flissikowski and M. Ramsteiner and K. Morgenroth and C. Stemmler and S. Fernández-Garrido and S. Sanguinetti and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx }, journal = { ACS Photonics }, volume = { x }, year = { 2021 }, pages = { x } }

TY - JOUR AU - T. Auzelle AU - M. Azadmand AU - T. Flissikowski AU - M. Ramsteiner AU - K. Morgenroth AU - C. Stemmler AU - S. Fernández-Garrido AU - S. Sanguinetti AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx JF - ACS Photonics JA - ACS Photonics J1 - VL - x SP - x PY - 2021/05/12

Electrically driven exciton-polariton optomechanics at super-high-frequencies

@article{ author = { A. S. Kuznetsov and D.H.O. Machado and K. Biermann and P. V. Santos }, title = { Electrically driven exciton-polariton optomechanics at super-high-frequencies }, journal = { Physical Review X }, volume = { 11 }, year = { 2021 }, pages = { 021020 } }

TY - JOUR AU - A. S. Kuznetsov AU - D.H.O. Machado AU - K. Biermann AU - P. V. Santos TI - Electrically driven exciton-polariton optomechanics at super-high-frequencies JF - Physical Review X JA - Phys. Rev. X J1 - PRX VL - 11 SP - 021020 PY - 2021/04/23

Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO

@article{ author = { Y. W. Windsor and D. Zahn and R. Kamrla and J. Feldl and H. Seiler and C.-T. Chiang and M. Ramsteiner and W. Widdra and R. Ernstorfer and L. Rettig }, title = { Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO }, journal = { Physical Review Letters }, volume = { 126 }, year = { 2021 }, pages = { 147202 } }

TY - JOUR AU - Y. W. Windsor AU - D. Zahn AU - R. Kamrla AU - J. Feldl AU - H. Seiler AU - C.-T. Chiang AU - M. Ramsteiner AU - W. Widdra AU - R. Ernstorfer AU - L. Rettig TI - Exchange-Striction Driven Ultrafast Nonthermal Lattice Dynamics in NiO JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 126 SP - 147202 PY - 2021/04/08

Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor

@article{ author = { H. Xu and R. Wu and J.-Y. Zhang and W. Han and L. Chen and X. Liang and C. Y. Haw and P. Mazzolini and O. Bierwagen and D.-C. Qi and K. H. L. Zhang }, title = { Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor }, journal = { ACS Applied Electronic Materials }, volume = { tbd }, year = { 2021 }, pages = { tbd } }

TY - JOUR AU - H. Xu AU - R. Wu AU - J.-Y. Zhang AU - W. Han AU - L. Chen AU - X. Liang AU - C. Y. Haw AU - P. Mazzolini AU - O. Bierwagen AU - D.-C. Qi AU - K. H. L. Zhang TI - Revealing the Electronic Structure and Optical Properties of CuFeO2 as a p-Type Oxide Semiconductor JF - ACS Applied Electronic Materials JA - J1 - VL - tbd SP - tbd PY - 2021/03/29

Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction

@article{ author = { A. Al Hassan and W. A. Salehi and R. B. Lewis and T. Anjum and C. Sternemann and L. Geelhaar and U. Pietsch }, title = { Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction }, journal = { Nanotechnology }, volume = { 32 }, year = { 2021 }, pages = { 205705 } }

TY - JOUR AU - A. Al Hassan AU - W. A. Salehi AU - R. B. Lewis AU - T. Anjum AU - C. Sternemann AU - L. Geelhaar AU - U. Pietsch TI - Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 32 SP - 205705 PY - 2021/03/26

Evolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films

@article{ author = { E. Zallo and D. Dragoni and Y. Zaytseva and S. Cecchi and N. I. Borgardt and M. Bernasconi and R. Calarco }, title = { Evolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 15 }, year = { 2021 }, pages = { 200434 } }

TY - JOUR AU - E. Zallo AU - D. Dragoni AU - Y. Zaytseva AU - S. Cecchi AU - N. I. Borgardt AU - M. Bernasconi AU - R. Calarco TI - Evolution of Low-Frequency Vibrational Modes in Ultrathin GeSbTe Films JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 15 SP - 200434 PY - 2021/03/16

Application of electron tomography for comprehensive determination of III-V interface properties

@article{ author = { L. Nicolai and K. Biermann and A. Trampert }, title = { Application of electron tomography for comprehensive determination of III-V interface properties }, journal = { Ultramicroscopy }, volume = { 224 }, year = { 2021 }, pages = { 113261 } }

TY - JOUR AU - L. Nicolai AU - K. Biermann AU - A. Trampert TI - Application of electron tomography for comprehensive determination of III-V interface properties JF - Ultramicroscopy JA - Ultramicroscopy J1 - UlMi VL - 224 SP - 113261 PY - 2021/03/16

Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures

@article{ author = { A. Boley and E. Luna and C. Zhang and N. Faleev and C. B. Honsberg and D. J. Smith }, title = { Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures }, journal = { Journal of Crystal Growth }, volume = { 562 }, year = { 2021 }, pages = { 126059 } }

TY - JOUR AU - A. Boley AU - E. Luna AU - C. Zhang AU - N. Faleev AU - C. B. Honsberg AU - D. J. Smith TI - Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 562 SP - 126059 PY - 2021/03/15

Synthesis of hexagonal boron nitride: from bulk crystals to atomically thin films

@article{ author = { J. M. J. Lopes }, title = { Synthesis of hexagonal boron nitride: from bulk crystals to atomically thin films }, journal = { Progress in Crystal Growth and Characterization of Materials }, volume = { 67 }, year = { 2021 }, pages = { 100522 } }

TY - JOUR AU - J. M. J. Lopes TI - Synthesis of hexagonal boron nitride: from bulk crystals to atomically thin films JF - Progress in Crystal Growth and Characterization of Materials JA - J1 - ISSN: 0960-8974 VL - 67 SP - 100522 PY - 2021/03/08

Electrografted interfaces on metal oxide electrodes for enzyme immobilization and bioelectrocatalysis

@article{ author = { T. G. A. A. Harris and N. Heidary and S. Frielingsdorf and S. Rauwerdink and A. Tahraoui and O. Lenz and I. Zebger and A. Fischer }, title = { Electrografted interfaces on metal oxide electrodes for enzyme immobilization and bioelectrocatalysis }, journal = { ChemElectroChem }, volume = { 8 }, year = { 2021 }, pages = { 1329 } }

TY - JOUR AU - T. G. A. A. Harris AU - N. Heidary AU - S. Frielingsdorf AU - S. Rauwerdink AU - A. Tahraoui AU - O. Lenz AU - I. Zebger AU - A. Fischer TI - Electrografted interfaces on metal oxide electrodes for enzyme immobilization and bioelectrocatalysis JF - ChemElectroChem JA - ChemElectroChem J1 - 2196-0216 VL - 8 SP - 1329 PY - 2021/03/08

Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

@article{ author = { P. Vogt and F. V. E. Hensling and K. Azizie and C. S. Chang and D. Turner and J. Park and J. P. McCandless and H. Paik and B. J. Bocklund and G. Hoffmann and O. Bierwagen and D. Jena and H. G. Xing and S. Mou and D. A. Muller and S.-L. Shang and Z.-K. Liu and D. G. Schlom }, title = { Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy }, journal = { APL Materials }, volume = { 9 }, year = { 2021 }, pages = { 031101 } }

TY - JOUR AU - P. Vogt AU - F. V. E. Hensling AU - K. Azizie AU - C. S. Chang AU - D. Turner AU - J. Park AU - J. P. McCandless AU - H. Paik AU - B. J. Bocklund AU - G. Hoffmann AU - O. Bierwagen AU - D. Jena AU - H. G. Xing AU - S. Mou AU - D. A. Muller AU - S.-L. Shang AU - Z.-K. Liu AU - D. G. Schlom TI - Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy JF - APL Materials JA - APL Mater. J1 - APLM VL - 9 SP - 031101 PY - 2021/03/03

The Role of Substrate on the Growth of 2D Heterostructures by CVD

@article{ author = { T.O Feijó and G. Copetti and E. R. F. Gerling and M. Hanke and J. M. J. Lopes and C. Radtke and G. V. Soares }, title = { The Role of Substrate on the Growth of 2D Heterostructures by CVD }, journal = { Applied Surface Science }, volume = { 539 }, year = { 2021 }, pages = { 148226 } }

TY - JOUR AU - T.O Feijó AU - G. Copetti AU - E. R. F. Gerling AU - M. Hanke AU - J. M. J. Lopes AU - C. Radtke AU - G. V. Soares TI - The Role of Substrate on the Growth of 2D Heterostructures by CVD JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 539 SP - 148226 PY - 2021/02/14

Correlation between frequency and location on the wafer for terahertz quantum-cascade lasers

@article{ author = { X. Lü and B. Röben and L. Schrottke and K. Biermann and H. T. Grahn }, title = { Correlation between frequency and location on the wafer for terahertz quantum-cascade lasers }, journal = { Semiconductor Science and Technology }, volume = { 36 }, year = { 2021 }, pages = { 035012 } }

TY - JOUR AU - X. Lü AU - B. Röben AU - L. Schrottke AU - K. Biermann AU - H. T. Grahn TI - Correlation between frequency and location on the wafer for terahertz quantum-cascade lasers JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 36 SP - 035012 PY - 2021/02/05

Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S

@article{ author = { Y. Takagaki and B. Jenichen and M. Ramsteiner and J. Herfort }, title = { Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S }, journal = { Journal of Alloys and Compounds }, volume = { 858 }, year = { 2021 }, pages = { 157709 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - M. Ramsteiner AU - J. Herfort TI - Dependence of interfacial resistance switching on transition metal constituent M = Cu, Ag, and Ni for chalcogenides Bi-M-S JF - Journal of Alloys and Compounds JA - J. Alloy. Comp. J1 - VL - 858 SP - 157709 PY - 2021/01/28

Optical anisotropies of asymmetric double GaAs (001) quantum wells

@article{ author = { O. Ruiz-Cigarrillo and L. F. Lastras-Martinez and E. A. Cerda-Méndez and G. Flores-Rangel and C. A. Bravo-Velazquez and R. E. Balderas-Navarro and A. Lastras-Martínez and N. A. Ulloa-Castillo and K. Biermann and P. V. Santos }, title = { Optical anisotropies of asymmetric double GaAs (001) quantum wells }, journal = { Physical Review B: Solid State }, volume = { 103 }, year = { 2021 }, pages = { 035309 } }

TY - JOUR AU - O. Ruiz-Cigarrillo AU - L. F. Lastras-Martinez AU - E. A. Cerda-Méndez AU - G. Flores-Rangel AU - C. A. Bravo-Velazquez AU - R. E. Balderas-Navarro AU - A. Lastras-Martínez AU - N. A. Ulloa-Castillo AU - K. Biermann AU - P. V. Santos TI - Optical anisotropies of asymmetric double GaAs (001) quantum wells JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 103 SP - 035309 PY - 2021/01/25

In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2

@article{ author = { M. Terker and L. Nicolai and S. Gaucher and J. Herfort and A. Trampert }, title = { In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2 }, journal = { Journal of Physical Chemistry C }, volume = { 125 }, year = { 2021 }, pages = { 2779 } }

TY - JOUR AU - M. Terker AU - L. Nicolai AU - S. Gaucher AU - J. Herfort AU - A. Trampert TI - In situ transmission electron microscopy of disorder-order transition in epitaxially stabilized FeGe2 JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 125 SP - 2779 PY - 2021/01/25

Remotely pumped GHz anti-bunched emission from single exciton states

@article{ author = { M. Yuan and K. Biermann and S. Takada and C. Bäuerle and P. V. Santos }, title = { Remotely pumped GHz anti-bunched emission from single exciton states }, journal = { ACS Photonics }, volume = { 8 }, year = { 2021 }, pages = { 758 } }

TY - JOUR AU - M. Yuan AU - K. Biermann AU - S. Takada AU - C. Bäuerle AU - P. V. Santos TI - Remotely pumped GHz anti-bunched emission from single exciton states JF - ACS Photonics JA - ACS Photonics J1 - VL - 8 SP - 758 PY - 2021/01/18

Optical contrast in the near-field limit for structural characterization of graphene nanoribbons

@article{ author = { G. Flores-Rangel and L.F. Lastras-Martínez and R. Castro-Garcia and O. Ruiz-Cigarrillo and R.E. Balderas-Navarro and L.D. Espinosa-Cuellar and A. Lastras-Martínez and J. M. J. Lopes }, title = { Optical contrast in the near-field limit for structural characterization of graphene nanoribbons }, journal = { Applied Surface Science }, volume = { 536 }, year = { 2021 }, pages = { 147710 } }

TY - JOUR AU - G. Flores-Rangel AU - L.F. Lastras-Martínez AU - R. Castro-Garcia AU - O. Ruiz-Cigarrillo AU - R.E. Balderas-Navarro AU - L.D. Espinosa-Cuellar AU - A. Lastras-Martínez AU - J. M. J. Lopes TI - Optical contrast in the near-field limit for structural characterization of graphene nanoribbons JF - Applied Surface Science JA - Appl. Surf. Sci. J1 - ASS VL - 536 SP - 147710 PY - 2021/01/15

External control of GaN band bending using phosphanate self-assembled monolayers

@article{ author = { T. Auzelle and F. Ullrich and S. Hietzschold and C. Sinito and S. Brackmann and W. Kowalsky and E. Mankel and O. Brandt and R. Lovrincic and S. Fernández-Garrido }, title = { External control of GaN band bending using phosphanate self-assembled monolayers }, journal = { ACS Applied Materials and Interfaces }, volume = { 13 }, year = { 2021 }, pages = { 4626 } }

TY - JOUR AU - T. Auzelle AU - F. Ullrich AU - S. Hietzschold AU - C. Sinito AU - S. Brackmann AU - W. Kowalsky AU - E. Mankel AU - O. Brandt AU - R. Lovrincic AU - S. Fernández-Garrido TI - External control of GaN band bending using phosphanate self-assembled monolayers JF - ACS Applied Materials and Interfaces JA - ACS Appl. Mater. Interfaces J1 - VL - 13 SP - 4626 PY - 2021/01/13

Isotopic study of Raman active phonon modes in beta-Ga2O3

@article{ author = { Benjamin M. Janzen and Piero Mazzolini and Roland Gillen and Andreas Falkenstein and Manfred Martin and Hans Tornatzky and Janina Maultzsch and O. Bierwagen and Markus R. Wagner }, title = { Isotopic study of Raman active phonon modes in beta-Ga2O3 }, journal = { Journal of Materials Chemistry C }, volume = { tbd }, year = { 2021 }, pages = { tbd } }

TY - JOUR AU - Benjamin M. Janzen AU - Piero Mazzolini AU - Roland Gillen AU - Andreas Falkenstein AU - Manfred Martin AU - Hans Tornatzky AU - Janina Maultzsch AU - O. Bierwagen AU - Markus R. Wagner TI - Isotopic study of Raman active phonon modes in beta-Ga2O3 JF - Journal of Materials Chemistry C JA - J. Mater. Chem. C J1 - VL - tbd SP - tbd PY - 2021/01/11

Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)

@article{ author = { G. Copetti and E. H. Nunes and T. O. Feijó and L. A. Galves and M. Heilmann and G. V. Soares and J. M. J. Lopes and C. Radtke }, title = { Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001) }, journal = { Nanotechnology }, volume = { 32 }, year = { 2021 }, pages = { 145707 } }

TY - JOUR AU - G. Copetti AU - E. H. Nunes AU - T. O. Feijó AU - L. A. Galves AU - M. Heilmann AU - G. V. Soares AU - J. M. J. Lopes AU - C. Radtke TI - Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001) JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 32 SP - 145707 PY - 2021/01/11

In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis

@article{ author = { K. Biermann and Paul L. J. Helgers and A. Crespo-Poveda and A. S. Kuznetsov and A. Tahraoui and B. Röben and X. Lü and L. Schrottke and P. V. Santos and H. T. Grahn }, title = { In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis }, journal = { Journal of Crystal Growth }, volume = { 557 }, year = { 2021 }, pages = { 125993 } }

TY - JOUR AU - K. Biermann AU - Paul L. J. Helgers AU - A. Crespo-Poveda AU - A. S. Kuznetsov AU - A. Tahraoui AU - B. Röben AU - X. Lü AU - L. Schrottke AU - P. V. Santos AU - H. T. Grahn TI - In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 557 SP - 125993 PY - 2021/01/07

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law

@article{ author = { V. M. Kaganer and O. V. Konovalov and S. Fernández-Garrido }, title = { Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law }, journal = { Acta Crystallographica A }, volume = { Acta Crystallographica A }, year = { 2021 }, pages = { 42 } }

TY - JOUR AU - V. M. Kaganer AU - O. V. Konovalov AU - S. Fernández-Garrido TI - Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness, and Porod’s law JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - Acta Crystallographica A SP - 42 PY - 2021/01/04

Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires

@article{ author = { L. Jaloustre and S. Le-Denmat and T. Auzelle and M. Azadmand and L. Geelhaar and F. Dahlem and R. Songmuang }, title = { Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires }, journal = { ACS Applied Nano Materials }, volume = { 4 }, year = { 2021 }, pages = { 43 } }

TY - JOUR AU - L. Jaloustre AU - S. Le-Denmat AU - T. Auzelle AU - M. Azadmand AU - L. Geelhaar AU - F. Dahlem AU - R. Songmuang TI - Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires JF - ACS Applied Nano Materials JA - ACS Appl. Nano Mater. J1 - VL - 4 SP - 43 PY - 2021/01/01