Probing the electronic band structure of ferromagnets with spin injection and extraction

@article{ author = { P. Bruski and S. C. Erwin and J. Herfort and A. Tahraoui and M. Ramsteiner }, title = { Probing the electronic band structure of ferromagnets with spin injection and extraction }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 245150 } }

TY - JOUR AU - P. Bruski AU - S. C. Erwin AU - J. Herfort AU - A. Tahraoui AU - M. Ramsteiner TI - Probing the electronic band structure of ferromagnets with spin injection and extraction JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 245150 PY - 2014/12/31

Si doping effects on (In,Ga)N nanowires

@article{ author = { J. Kamimura and M. Ramsteiner and L. Geelhaar and H. Riechert }, title = { Si doping effects on (In,Ga)N nanowires }, journal = { Journal of Applied Physics }, volume = { 116 }, year = { 2014 }, pages = { 244310 } }

TY - JOUR AU - J. Kamimura AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert TI - Si doping effects on (In,Ga)N nanowires JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 116 SP - 244310 PY - 2014/12/30

Compensating vacancy defects in Sn- and Mg-doped In2O3

@article{ author = { E. Korhonen and F. Tuomisto and O. Bierwagen and J. S. Speck and Z. Galazka }, title = { Compensating vacancy defects in Sn- and Mg-doped In2O3 }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 245307 } }

TY - JOUR AU - E. Korhonen AU - F. Tuomisto AU - O. Bierwagen AU - J. S. Speck AU - Z. Galazka TI - Compensating vacancy defects in Sn- and Mg-doped In2O3 JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 245307 PY - 2014/12/29

Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001)

@article{ author = { R. Schewski and G. Wagner and M. Baldini and D. Gogova and Z. Galazka and T. Schulz and T. Remmele and T. Markurt and H. von Wenckstern and M. Grundmann and O. Bierwagen and P. Vogt and M. Albrecht }, title = { Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001) }, journal = { Applied Physics Express }, volume = { 8 }, year = { 2014 }, pages = { 011101 } }

TY - JOUR AU - R. Schewski AU - G. Wagner AU - M. Baldini AU - D. Gogova AU - Z. Galazka AU - T. Schulz AU - T. Remmele AU - T. Markurt AU - H. von Wenckstern AU - M. Grundmann AU - O. Bierwagen AU - P. Vogt AU - M. Albrecht TI - Epitaxial stabilization of pseudomorphic alpha-Ga2O3 on sapphire (0001) JF - Applied Physics Express JA - Appl. Phys. Express J1 - VL - 8 SP - 011101 PY - 2014/12/12

Structure of a new rotationally faulted multi-layer graphene-carbon nanoflower composite

@article{ author = { M. Miettinen and T. Torvela and C. Pfüller and J. Hokkinen and M. Ramsteiner and L. Modesto-Lopez and J. Jokiniemi and A. Lähde }, title = { Structure of a new rotationally faulted multi-layer graphene-carbon nanoflower composite }, journal = { Carbon }, volume = { 84 }, year = { 2014 }, pages = { 214 } }

TY - JOUR AU - M. Miettinen AU - T. Torvela AU - C. Pfüller AU - J. Hokkinen AU - M. Ramsteiner AU - L. Modesto-Lopez AU - J. Jokiniemi AU - A. Lähde TI - Structure of a new rotationally faulted multi-layer graphene-carbon nanoflower composite JF - Carbon JA - Carbon J1 - VL - 84 SP - 214 PY - 2014/12/03

Evidence for frequency comb emission from a Fabry-Pérot terahertz quantum-cascade laser

@article{ author = { M. Wienold and B. Röben and L. Schrottke and H. T. Grahn }, title = { Evidence for frequency comb emission from a Fabry-Pérot terahertz quantum-cascade laser }, journal = { Optics Express }, volume = { 22 }, year = { 2014 }, pages = { 30410 } }

TY - JOUR AU - M. Wienold AU - B. Röben AU - L. Schrottke AU - H. T. Grahn TI - Evidence for frequency comb emission from a Fabry-Pérot terahertz quantum-cascade laser JF - Optics Express JA - Opt. Express J1 - VL - 22 SP - 30410 PY - 2014/12/01

Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory

@article{ author = { O. Supplie and S. Brückner and O. Romanyuk and H. Döscher and P. Kleinschmidt and F. Grosse and T. Hannappel }, title = { Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 235301 } }

TY - JOUR AU - O. Supplie AU - S. Brückner AU - O. Romanyuk AU - H. Döscher AU - P. Kleinschmidt AU - F. Grosse AU - T. Hannappel TI - Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 235301 PY - 2014/12/01

Towards truly single crystalline GeTe films: The relevance of the substrate surface

@article{ author = { R. N. Wang and J. E. Boschker and E. Bruyer and D. Di Sante and S. Picozzi and K. Perumal and A. Giussani and H. Riechert and R. Calarco }, title = { Towards truly single crystalline GeTe films: The relevance of the substrate surface }, journal = { Journal of Physical Chemistry C }, volume = { 118 (51) }, year = { 2014 }, pages = { 29724 } }

TY - JOUR AU - R. N. Wang AU - J. E. Boschker AU - E. Bruyer AU - D. Di Sante AU - S. Picozzi AU - K. Perumal AU - A. Giussani AU - H. Riechert AU - R. Calarco TI - Towards truly single crystalline GeTe films: The relevance of the substrate surface JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 118 (51) SP - 29724 PY - 2014/11/19

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency

@article{ author = { P. Corfdir and C. Hauswald and J. K. Zettler and T. Flissikowski and J. Lähnemann and S. Fernández-Garrido and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 195309 } }

TY - JOUR AU - P. Corfdir AU - C. Hauswald AU - J. K. Zettler AU - T. Flissikowski AU - J. Lähnemann AU - S. Fernández-Garrido AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 195309 PY - 2014/11/18

Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111)

@article{ author = { A. Biermanns and E. Dimakis and Anton Davydok and Takkuo Sasaki and L. Geelhaar and Masamitu Takahasi and U. Pietsch }, title = { Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111) }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 6878 } }

TY - JOUR AU - A. Biermanns AU - E. Dimakis AU - Anton Davydok AU - Takkuo Sasaki AU - L. Geelhaar AU - Masamitu Takahasi AU - U. Pietsch TI - Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111) JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 6878 PY - 2014/11/16

Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field-ionization of donors

@article{ author = { P. Corfdir and J. K. Zettler and C. Hauswald and S. Fernández-Garrido and O. Brandt and P. Lefebvre }, title = { Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field-ionization of donors }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 205301 } }

TY - JOUR AU - P. Corfdir AU - J. K. Zettler AU - C. Hauswald AU - S. Fernández-Garrido AU - O. Brandt AU - P. Lefebvre TI - Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field-ionization of donors JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 205301 PY - 2014/11/13

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry

@article{ author = { C. Somaschini and A. Biermanns and S. Bietti and G. Bussone and A. Trampert and S. Sanguinetti and H. Riechert and U. Pietsch and L. Geelhaar }, title = { Axial InAs/GaAs heterostructures on silicon in a nanowire geometry }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 485602 } }

TY - JOUR AU - C. Somaschini AU - A. Biermanns AU - S. Bietti AU - G. Bussone AU - A. Trampert AU - S. Sanguinetti AU - H. Riechert AU - U. Pietsch AU - L. Geelhaar TI - Axial InAs/GaAs heterostructures on silicon in a nanowire geometry JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 485602 PY - 2014/11/13

Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy

@article{ author = { N. A. Ulloa-Castillo and L. F. Lastras-Martinez and R. E. Balderas-Navarro and R. Herrera-Jasso and A. Lastras-Martínez }, title = { Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 181905 } }

TY - JOUR AU - N. A. Ulloa-Castillo AU - L. F. Lastras-Martinez AU - R. E. Balderas-Navarro AU - R. Herrera-Jasso AU - A. Lastras-Martínez TI - Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 181905 PY - 2014/11/06

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and C. Hauswald and B. Jenichen and M. Ramsteiner and V. Consonni and L. Geelhaar and O. Brandt }, title = { Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 455702 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - C. Hauswald AU - B. Jenichen AU - M. Ramsteiner AU - V. Consonni AU - L. Geelhaar AU - O. Brandt TI - Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 455702 PY - 2014/10/20

Multimode nanobeam cavities for nonlinear optics: High quality resonances separated by an octave

@article{ author = { S. Buckley and M. Radulaski and J. L. Zhang and J. Petykiewicz and K. Biermann and J. Vuckovic }, title = { Multimode nanobeam cavities for nonlinear optics: High quality resonances separated by an octave }, journal = { Optics Express }, volume = { 22 }, year = { 2014 }, pages = { 26498 } }

TY - JOUR AU - S. Buckley AU - M. Radulaski AU - J. L. Zhang AU - J. Petykiewicz AU - K. Biermann AU - J. Vuckovic TI - Multimode nanobeam cavities for nonlinear optics: High quality resonances separated by an octave JF - Optics Express JA - Opt. Express J1 - VL - 22 SP - 26498 PY - 2014/10/20

Ring waveguides for gigahertz acoustic waves on silicon

@article{ author = { P. Boucher and S. Rauwerdink and A. Tahraoui and C. Wenger and Y. Yamamoto and P. V. Santos }, title = { Ring waveguides for gigahertz acoustic waves on silicon }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 161904 } }

TY - JOUR AU - P. Boucher AU - S. Rauwerdink AU - A. Tahraoui AU - C. Wenger AU - Y. Yamamoto AU - P. V. Santos TI - Ring waveguides for gigahertz acoustic waves on silicon JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 161904 PY - 2014/10/20

Cancelation of confinement effect by spin-orbit couplings in narrow strips of two-dimensional topological insulators

@article{ author = { Y. Takagaki }, title = { Cancelation of confinement effect by spin-orbit couplings in narrow strips of two-dimensional topological insulators }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165305 } }

TY - JOUR AU - Y. Takagaki TI - Cancelation of confinement effect by spin-orbit couplings in narrow strips of two-dimensional topological insulators JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 165305 PY - 2014/10/09

Valence-band density of states and surface electron accumulation in epitaxial SnO2 films

@article{ author = { S. K. Vasheghani Farahani and T. D. Veal and J. J. Mudd and D. O. Scanlon and G. W. Watson and O. Bierwagen and M. E. White and J. S. Speck and C. F. McConville }, title = { Valence-band density of states and surface electron accumulation in epitaxial SnO2 films }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 155413 } }

TY - JOUR AU - S. K. Vasheghani Farahani AU - T. D. Veal AU - J. J. Mudd AU - D. O. Scanlon AU - G. W. Watson AU - O. Bierwagen AU - M. E. White AU - J. S. Speck AU - C. F. McConville TI - Valence-band density of states and surface electron accumulation in epitaxial SnO2 films JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 155413 PY - 2014/10/08

Origin of the nonradiative decay of bound excitons in GaN nanowires

@article{ author = { C. Hauswald and P. Corfdir and J. K. Zettler and V. M. Kaganer and K. K. Sabelfeld and S. Fernández-Garrido and T. Flissikowski and V. Consonni and T. Gotschke and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Origin of the nonradiative decay of bound excitons in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165304 } }

TY - JOUR AU - C. Hauswald AU - P. Corfdir AU - J. K. Zettler AU - V. M. Kaganer AU - K. K. Sabelfeld AU - S. Fernández-Garrido AU - T. Flissikowski AU - V. Consonni AU - T. Gotschke AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Origin of the nonradiative decay of bound excitons in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 165304 PY - 2014/10/08

Luminescence associated with stacking faults in GaN

@article{ author = { J. Lähnemann and U. Jahn and O. Brandt and T. Flissikowski and P. Dogan and H. T. Grahn }, title = { Luminescence associated with stacking faults in GaN }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 423001 } }

TY - JOUR AU - J. Lähnemann AU - U. Jahn AU - O. Brandt AU - T. Flissikowski AU - P. Dogan AU - H. T. Grahn TI - Luminescence associated with stacking faults in GaN JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 423001 PY - 2014/10/01

Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions

@article{ author = { J. M. Wofford and M. H. Oliveira Jr. and T. Schumann and B. Jenichen and M. Ramsteiner and U. Jahn and S. Fölsch and J. M. J. Lopes and H. Riechert }, title = { Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions }, journal = { New Journal Physics }, volume = { 16 }, year = { 2014 }, pages = { 093055 } }

TY - JOUR AU - J. M. Wofford AU - M. H. Oliveira Jr. AU - T. Schumann AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - S. Fölsch AU - J. M. J. Lopes AU - H. Riechert TI - Molecular beam epitaxy of graphene on ultra-smooth nickel: Growth mode and substrate interactions JF - New Journal Physics JA - New J. Phys. J1 - VL - 16 SP - 093055 PY - 2014/09/30

Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study

@article{ author = { E. Luna and J. Grandal and E. Gallardo and J.M. Calleja and M.A. Sanchez-Garcia and E. Calleja and A. Trampert }, title = { Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study }, journal = { Microscopy and Microanalysis }, volume = { 20 }, year = { 2014 }, pages = { 1471 } }

TY - JOUR AU - E. Luna AU - J. Grandal AU - E. Gallardo AU - J.M. Calleja AU - M.A. Sanchez-Garcia AU - E. Calleja AU - A. Trampert TI - Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study JF - Microscopy and Microanalysis JA - Microsc Microanal J1 - VL - 20 SP - 1471 PY - 2014/09/29

Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures

@article{ author = { G. Bussone and E. Dimakis and R. Grifone and A. Biermanns and A. Tahraoui and D. Carbone and L. Geelhaar and T. U. Schülli and U. Pietsch }, title = { Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures }, journal = { Physica Status Solidi Rapid Research Letters }, volume = { 8 }, year = { 2014 }, pages = { 1007 } }

TY - JOUR AU - G. Bussone AU - E. Dimakis AU - R. Grifone AU - A. Biermanns AU - A. Tahraoui AU - D. Carbone AU - L. Geelhaar AU - T. U. Schülli AU - U. Pietsch TI - Impact of strain induced by polymer curing in benzocyclobutene embedded semiconductor nanostructures JF - Physica Status Solidi Rapid Research Letters JA - Phys. Status Solidi-Rapid Res. Lett. J1 - VL - 8 SP - 1007 PY - 2014/09/25

Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction

@article{ author = { P. Fons and P. Rodenbach and K. V. Mitrofanov and A. V. Kolobov and J. Tominaga and R. Shayduck and A. Giussani and R. Calarco and M. Hanke and H. Riechert and R.E. Simpson and M. Hase }, title = { Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 094305 } }

TY - JOUR AU - P. Fons AU - P. Rodenbach AU - K. V. Mitrofanov AU - A. V. Kolobov AU - J. Tominaga AU - R. Shayduck AU - A. Giussani AU - R. Calarco AU - M. Hanke AU - H. Riechert AU - R.E. Simpson AU - M. Hase TI - Picosecond strain dynamics in Ge2Sb2Te5 monitored by time-resolved x-ray diffraction JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 094305 PY - 2014/09/25

Nonlinear frequency conversion using high quality modes in GaAs nanobeam cavities

@article{ author = { S. Buckley and M. Radulaski and J. L. Zhang and J. Petykiewicz and K. Biermann and J. Vuckovic }, title = { Nonlinear frequency conversion using high quality modes in GaAs nanobeam cavities }, journal = { Optics Letters }, volume = { 39 }, year = { 2014 }, pages = { 5673 } }

TY - JOUR AU - S. Buckley AU - M. Radulaski AU - J. L. Zhang AU - J. Petykiewicz AU - K. Biermann AU - J. Vuckovic TI - Nonlinear frequency conversion using high quality modes in GaAs nanobeam cavities JF - Optics Letters JA - Opt. Lett. J1 - OpLe VL - 39 SP - 5673 PY - 2014/09/24

Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires

@article{ author = { J. Grandal and M. Wu and X. Kong and M. Hanke and E. Dimakis and L. Geelhaar and H. Riechert and A. Trampert }, title = { Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 121602 } }

TY - JOUR AU - J. Grandal AU - M. Wu AU - X. Kong AU - M. Hanke AU - E. Dimakis AU - L. Geelhaar AU - H. Riechert AU - A. Trampert TI - Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 121602 PY - 2014/09/22

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy

@article{ author = { J. Lähnemann and C. Hauswald and M. Wölz and U. Jahn and M. Hanke and L. Geelhaar and O. Brandt }, title = { Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 394010 } }

TY - JOUR AU - J. Lähnemann AU - C. Hauswald AU - M. Wölz AU - U. Jahn AU - M. Hanke AU - L. Geelhaar AU - O. Brandt TI - Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 394010 PY - 2014/09/12

Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 1 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Minimizing the impact of surface potentials in axial InGaN/GaN nanowire heterostructures by reducing their diameter JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 1 PY - 2014/09/12

Self-assisted GaAs nanowires with controllable number density on bare Silicon

@article{ author = { S. Bietti and C. Somaschini and C. Frigeri and A. Fedorov and L. Esposito and L. Geelhaar and S. Sanguinetti }, title = { Self-assisted GaAs nanowires with controllable number density on bare Silicon }, journal = { Journal of Physics D: Applied Physics }, volume = { 47 }, year = { 2014 }, pages = { 394002 } }

TY - JOUR AU - S. Bietti AU - C. Somaschini AU - C. Frigeri AU - A. Fedorov AU - L. Esposito AU - L. Geelhaar AU - S. Sanguinetti TI - Self-assisted GaAs nanowires with controllable number density on bare Silicon JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 47 SP - 394002 PY - 2014/09/11

X-ray diffraction from hexagonal dislocation networks

@article{ author = { V. G. Kopp and V. M. Kaganer }, title = { X-ray diffraction from hexagonal dislocation networks }, journal = { Philosophical Magazine }, volume = { 94 }, year = { 2014 }, pages = { 3247 } }

TY - JOUR AU - V. G. Kopp AU - V. M. Kaganer TI - X-ray diffraction from hexagonal dislocation networks JF - Philosophical Magazine JA - Phil. Mag. J1 - VL - 94 SP - 3247 PY - 2014/09/09

Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter

@article{ author = { O. Marquardt and L. Geelhaar and O. Brandt }, title = { Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter }, journal = { IEEE }, volume = { IEEE Catalog Nr. CFP14817-PRT }, year = { 2014 }, pages = { 15 } }

TY - JOUR AU - O. Marquardt AU - L. Geelhaar AU - O. Brandt TI - Minimizing the influence of surface potentials in axial (In,Ga)N/GaN nanowire heterostructures by reducing their diameter JF - IEEE JA - IEEE J1 - VL - IEEE Catalog Nr. CFP14817-PRT SP - 15 PY - 2014/09/01

Strain distributions and diffraction peak profiles from crystals with dislocations

@article{ author = { V. M. Kaganer and K. K. Sabelfeld }, title = { Strain distributions and diffraction peak profiles from crystals with dislocations }, journal = { Acta Crystallographica A }, volume = { 70 }, year = { 2014 }, pages = { 457 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld TI - Strain distributions and diffraction peak profiles from crystals with dislocations JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 70 SP - 457 PY - 2014/09/01

In situ observation of epitaxial Li-Si-nanostructure formation on Si(111)

@article{ author = { F. Grosse and A. Proessdorf and M. Hanke and O. Bierwagen }, title = { In situ observation of epitaxial Li-Si-nanostructure formation on Si(111) }, journal = { Journal of Physical Chemistry C }, volume = { 118 }, year = { 2014 }, pages = { 21572 } }

TY - JOUR AU - F. Grosse AU - A. Proessdorf AU - M. Hanke AU - O. Bierwagen TI - In situ observation of epitaxial Li-Si-nanostructure formation on Si(111) JF - Journal of Physical Chemistry C JA - J. Phys. Chem. C J1 - VL - 118 SP - 21572 PY - 2014/08/28

Spin Control and manipulation in (111) GaAs quantum wells

@article{ author = { A. Hernández-Mínguez and K. Biermann and R. Hey and P. V. Santos }, title = { Spin Control and manipulation in (111) GaAs quantum wells }, journal = { Proceedings of SPIE }, volume = { 9167 }, year = { 2014 }, pages = { 916721 } }

TY - JOUR AU - A. Hernández-Mínguez AU - K. Biermann AU - R. Hey AU - P. V. Santos TI - Spin Control and manipulation in (111) GaAs quantum wells JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 9167 SP - 916721 PY - 2014/08/28

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

@article{ author = { M. Musolino and A. Tahraoui and F. Limbach and J. Lähnemann and U. Jahn and O. Brandt and L. Geelhaar and H. Riechert }, title = { Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 083505 } }

TY - JOUR AU - M. Musolino AU - A. Tahraoui AU - F. Limbach AU - J. Lähnemann AU - U. Jahn AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 083505 PY - 2014/08/26

A generalized, plane-wave formulation of k.p formalism and continuum elasticity approach to elastic and electronic properties of semiconductor nanostructures

@article{ author = { O. Marquardt and S. Boeck and C. Freysoldt and T. Hickel and S. Schulz and J. Neugebauer and E. P. O'Reilly }, title = { A generalized, plane-wave formulation of k.p formalism and continuum elasticity approach to elastic and electronic properties of semiconductor nanostructures }, journal = { Computational Materials Science }, volume = { 95 }, year = { 2014 }, pages = { 280 } }

TY - JOUR AU - O. Marquardt AU - S. Boeck AU - C. Freysoldt AU - T. Hickel AU - S. Schulz AU - J. Neugebauer AU - E. P. O'Reilly TI - A generalized, plane-wave formulation of k.p formalism and continuum elasticity approach to elastic and electronic properties of semiconductor nanostructures JF - Computational Materials Science JA - Comp. Mater. Sci. J1 - CMS VL - 95 SP - 280 PY - 2014/08/21

Element substitution from substrates in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ overlayers deposited by hot wall epitaxy

@article{ author = { Y. Takagaki and U. Jahn and B. Jenichen and K. Berlin and X. Kong and K. Biermann }, title = { Element substitution from substrates in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ overlayers deposited by hot wall epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 29 }, year = { 2014 }, pages = { 095021 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - B. Jenichen AU - K. Berlin AU - X. Kong AU - K. Biermann TI - Element substitution from substrates in Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃ overlayers deposited by hot wall epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 29 SP - 095021 PY - 2014/08/13

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

@article{ author = { V. Bragaglia and B. Jenichen and A. Giussani and K. Perumal and H. Riechert and R. Calarco }, title = { Structural change upon annealing of amorphous GeSbTe grown on Si(111) }, journal = { Journal of Applied Physics }, volume = { 116 }, year = { 2014 }, pages = { 054913 } }

TY - JOUR AU - V. Bragaglia AU - B. Jenichen AU - A. Giussani AU - K. Perumal AU - H. Riechert AU - R. Calarco TI - Structural change upon annealing of amorphous GeSbTe grown on Si(111) JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 116 SP - 054913 PY - 2014/08/07

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

@article{ author = { M. Wu and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Observation of atomic ordering of triple-period-A and -B type in GaAsBi }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 041602 } }

TY - JOUR AU - M. Wu AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Observation of atomic ordering of triple-period-A and -B type in GaAsBi JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 041602 PY - 2014/07/30

Green luminescence in Mg-doped GaN

@article{ author = { M. A. Reshchikov and D. O. Demchenko and J. D. McNamara and S. Fernández-Garrido and R. Calarco }, title = { Green luminescence in Mg-doped GaN }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 035207 } }

TY - JOUR AU - M. A. Reshchikov AU - D. O. Demchenko AU - J. D. McNamara AU - S. Fernández-Garrido AU - R. Calarco TI - Green luminescence in Mg-doped GaN JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 035207 PY - 2014/07/21

Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices

@article{ author = { D. Bang and H. Awano and J. Tominaga and A. V. Kolobov and P. Fons and Y. Saito and K. Makino and T. Nakano and M. Hase and Y. Takagaki and A. Giussani and R. Calarco and S. Murakami }, title = { Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices }, journal = { Scientific Reports }, volume = { 4 }, year = { 2014 }, pages = { 5727 } }

TY - JOUR AU - D. Bang AU - H. Awano AU - J. Tominaga AU - A. V. Kolobov AU - P. Fons AU - Y. Saito AU - K. Makino AU - T. Nakano AU - M. Hase AU - Y. Takagaki AU - A. Giussani AU - R. Calarco AU - S. Murakami TI - Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 4 SP - 5727 PY - 2014/07/17

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

@article{ author = { A. Proessdorf and M. Niehle and M. Hanke and F. Grosse and V. M. Kaganer and O. Bierwagen and A. Trampert }, title = { Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 021601 } }

TY - JOUR AU - A. Proessdorf AU - M. Niehle AU - M. Hanke AU - F. Grosse AU - V. M. Kaganer AU - O. Bierwagen AU - A. Trampert TI - Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 021601 PY - 2014/07/14

Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments

@article{ author = { N. M. Bom and M.H. Oliveira Jr. and G.V. Soares and C. Radtke and J. M. J. Lopes and H. Riechert }, title = { Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments }, journal = { Carbon }, volume = { 78 }, year = { 2014 }, pages = { 298 } }

TY - JOUR AU - N. M. Bom AU - M.H. Oliveira Jr. AU - G.V. Soares AU - C. Radtke AU - J. M. J. Lopes AU - H. Riechert TI - Synergistic effect of H2O and O2 on the decoupling of epitaxial monolayer graphene from SiC(0001) via thermal treatments JF - Carbon JA - Carbon J1 - VL - 78 SP - 298 PY - 2014/07/11

Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations

@article{ author = { X. Gong and P. Dogan and X. Zhang and U. Jahn and K. Xu and L. Bian and H. Yang }, title = { Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations }, journal = { Japanese Journal of Applied Physics, Part 1 }, volume = { 53 }, year = { 2014 }, pages = { 085601 } }

TY - JOUR AU - X. Gong AU - P. Dogan AU - X. Zhang AU - U. Jahn AU - K. Xu AU - L. Bian AU - H. Yang TI - Atomic-scale behavior of adatoms in axial and radial growth of GaN nanowires: Molecular dynamics simulations JF - Japanese Journal of Applied Physics, Part 1 JA - Jpn. J. Appl. Phys., Part 1 J1 - JJAP1 VL - 53 SP - 085601 PY - 2014/07/09

The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

@article{ author = { T. Schumann and M. Dubslaff and M. H. Oliveira Jr. and M. Hanke and J. M. J. Lopes and H. Riechert }, title = { The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001) }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 041403(R) } }

TY - JOUR AU - T. Schumann AU - M. Dubslaff AU - M. H. Oliveira Jr. AU - M. Hanke AU - J. M. J. Lopes AU - H. Riechert TI - The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001) JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 041403(R) PY - 2014/07/08

Quantum dots with single-atom precision

@article{ author = { S. Fölsch and J. Martinez-Blanco and J. Yang and K. Kanisawa and S. C. Erwin }, title = { Quantum dots with single-atom precision }, journal = { Nature Nanotechnology }, volume = { 9 }, year = { 2014 }, pages = { 505 } }

TY - JOUR AU - S. Fölsch AU - J. Martinez-Blanco AU - J. Yang AU - K. Kanisawa AU - S. C. Erwin TI - Quantum dots with single-atom precision JF - Nature Nanotechnology JA - Nature Nanotechnol. J1 - VL - 9 SP - 505 PY - 2014/06/29

InPBi Single Crystals Grown by Molecular Beam Epitaxy

@article{ author = { K. Wang and Y. Gu and H. F. Zhou and L. Y. Zhang and C. Z. Kang and M. Wu and W. W. Pan and P. F. Lu and Q. Gong and S. M. Wang }, title = { InPBi Single Crystals Grown by Molecular Beam Epitaxy }, journal = { Scientific Reports }, volume = { 4 }, year = { 2014 }, pages = { no. } }

TY - JOUR AU - K. Wang AU - Y. Gu AU - H. F. Zhou AU - L. Y. Zhang AU - C. Z. Kang AU - M. Wu AU - W. W. Pan AU - P. F. Lu AU - Q. Gong AU - S. M. Wang TI - InPBi Single Crystals Grown by Molecular Beam Epitaxy JF - Scientific Reports JA - Sci. Rep. J1 - SREP VL - 4 SP - no. PY - 2014/06/26

Efficient simulation of the impact of interface grading on the optical and transport properties of semiconductor heterostructures

@article{ author = { X. Lü and L. Schrottke and E. Luna and H. T. Grahn }, title = { Efficient simulation of the impact of interface grading on the optical and transport properties of semiconductor heterostructures }, journal = { Applied Physics Letters }, volume = { 104 }, year = { 2014 }, pages = { 232106 } }

TY - JOUR AU - X. Lü AU - L. Schrottke AU - E. Luna AU - H. T. Grahn TI - Efficient simulation of the impact of interface grading on the optical and transport properties of semiconductor heterostructures JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 104 SP - 232106 PY - 2014/06/10

Atomic structure and energetics of GdN clusters in Gd-doped GaN

@article{ author = { M. Wu and S. C. Erwin and A. Trampert }, title = { Atomic structure and energetics of GdN clusters in Gd-doped GaN }, journal = { Acta Materialia }, volume = { 76 }, year = { 2014 }, pages = { 87 } }

TY - JOUR AU - M. Wu AU - S. C. Erwin AU - A. Trampert TI - Atomic structure and energetics of GdN clusters in Gd-doped GaN JF - Acta Materialia JA - Acta Mat. J1 - VL - 76 SP - 87 PY - 2014/06/09

Semicoherent growth of Bi2Te3 layers on InP(111)B by hot wall epitaxy

@article{ author = { Y. Takagaki and B. Jenichen and V. Kopp and U. Jahn and M. Ramsteiner and C. Herrmann }, title = { Semicoherent growth of Bi2Te3 layers on InP(111)B by hot wall epitaxy }, journal = { Semiconductor Science and Technology }, volume = { 29 }, year = { 2014 }, pages = { 075021 } }

TY - JOUR AU - Y. Takagaki AU - B. Jenichen AU - V. Kopp AU - U. Jahn AU - M. Ramsteiner AU - C. Herrmann TI - Semicoherent growth of Bi2Te3 layers on InP(111)B by hot wall epitaxy JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 29 SP - 075021 PY - 2014/06/06

Ferroelectric switching in epitaxial GeTe films

@article{ author = { A. V. Kolobov and D. J. Kim and A. Giussani and R. Calarco and A. Gruverman }, title = { Ferroelectric switching in epitaxial GeTe films }, journal = { AIP Advances }, volume = { 2 }, year = { 2014 }, pages = { 066101 } }

TY - JOUR AU - A. V. Kolobov AU - D. J. Kim AU - A. Giussani AU - R. Calarco AU - A. Gruverman TI - Ferroelectric switching in epitaxial GeTe films JF - AIP Advances JA - AIP Adv. J1 - VL - 2 SP - 066101 PY - 2014/06/06

Mechanical resonance characteristics of a cylindrical semiconductor heterostructure containing a high-mobility two-dimensional electron gas

@article{ author = { H. Okamoto and W. Izumida and Y. Hirayama and H. Yamaguchi and A. Riedel and K.-J. Friedland }, title = { Mechanical resonance characteristics of a cylindrical semiconductor heterostructure containing a high-mobility two-dimensional electron gas }, journal = { Physical Review B: Solid State }, volume = { 89 }, year = { 2014 }, pages = { 245304 } }

TY - JOUR AU - H. Okamoto AU - W. Izumida AU - Y. Hirayama AU - H. Yamaguchi AU - A. Riedel AU - K.-J. Friedland TI - Mechanical resonance characteristics of a cylindrical semiconductor heterostructure containing a high-mobility two-dimensional electron gas JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 89 SP - 245304 PY - 2014/06/06

Second-Harmonic Generation in GaAs Photonic Crystal Cavities in (111)B and (001) Crystal Orientations

@article{ author = { S. Buckley and M. Radulaski and J. Petykiewicz and K. G. Lagoudakis and J. Kang and M. Brongersma and K. Biermann and J. Vučkovic }, title = { Second-Harmonic Generation in GaAs Photonic Crystal Cavities in (111)B and (001) Crystal Orientations }, journal = { ACS Photonics }, volume = { 1 }, year = { 2014 }, pages = { 516 } }

TY - JOUR AU - S. Buckley AU - M. Radulaski AU - J. Petykiewicz AU - K. G. Lagoudakis AU - J. Kang AU - M. Brongersma AU - K. Biermann AU - J. Vučkovic TI - Second-Harmonic Generation in GaAs Photonic Crystal Cavities in (111)B and (001) Crystal Orientations JF - ACS Photonics JA - ACS Photonics J1 - VL - 1 SP - 516 PY - 2014/05/30

Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy

@article{ author = { T. Henn and T. Kießling and L. W. Molenkamp and D. Reuter and A. D. Wieck and K. Biermann and P. V. Santos and W. Ossau }, title = { Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy }, journal = { Physica Status Solidi B }, volume = { 251 }, year = { 2014 }, pages = { 1839 } }

TY - JOUR AU - T. Henn AU - T. Kießling AU - L. W. Molenkamp AU - D. Reuter AU - A. D. Wieck AU - K. Biermann AU - P. V. Santos AU - W. Ossau TI - Time and spatially resolved electron spin detection in semiconductor heterostructures by magneto-optical Kerr microscopy JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 251 SP - 1839 PY - 2014/05/23

Electronic Properties of Graphene Encapsulated with Different Two- Dimensional Atomic Crystals

@article{ author = { A. V. Kretinin and Y. Cao and J. S. Tu and G. L. Yu and R. Jalil and K. S. Novoselov and S. J. Haigh and A. Gholinia and A. Mishchenko and M. Lozada and T. Georgiou and C. R. Woods and F. Withers and P. Blake and G. Eda and A. Wirsig and C. Hucho and K. Watanabe and T. Taniguchi and A. K. Geim and R. V. Gorbachev }, title = { Electronic Properties of Graphene Encapsulated with Different Two- Dimensional Atomic Crystals }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 3270 } }

TY - JOUR AU - A. V. Kretinin AU - Y. Cao AU - J. S. Tu AU - G. L. Yu AU - R. Jalil AU - K. S. Novoselov AU - S. J. Haigh AU - A. Gholinia AU - A. Mishchenko AU - M. Lozada AU - T. Georgiou AU - C. R. Woods AU - F. Withers AU - P. Blake AU - G. Eda AU - A. Wirsig AU - C. Hucho AU - K. Watanabe AU - T. Taniguchi AU - A. K. Geim AU - R. V. Gorbachev TI - Electronic Properties of Graphene Encapsulated with Different Two- Dimensional Atomic Crystals JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 3270 PY - 2014/05/20

Synthesis of SmB6 films by Mg-assisted solid state reaction

@article{ author = { Y. Takagaki and A. Wirsig and M. Ramsteiner and B. Jenichen and U. Jahn }, title = { Synthesis of SmB6 films by Mg-assisted solid state reaction }, journal = { Semiconductor Science and Technology }, volume = { 29 }, year = { 2014 }, pages = { 075016 } }

TY - JOUR AU - Y. Takagaki AU - A. Wirsig AU - M. Ramsteiner AU - B. Jenichen AU - U. Jahn TI - Synthesis of SmB6 films by Mg-assisted solid state reaction JF - Semiconductor Science and Technology JA - Semicond. Sci. Technol. J1 - SST VL - 29 SP - 075016 PY - 2014/05/16

Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates

@article{ author = { E. Dimakis and U. Jahn and M. Ramsteiner and A. Tahraoui and J. Grandal and X. Kong and O. Marquardt and A. Trampert and H. Riechert and L. Geelhaar }, title = { Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 2604 } }

TY - JOUR AU - E. Dimakis AU - U. Jahn AU - M. Ramsteiner AU - A. Tahraoui AU - J. Grandal AU - X. Kong AU - O. Marquardt AU - A. Trampert AU - H. Riechert AU - L. Geelhaar TI - Coaxial multi-shell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 2604 PY - 2014/05/14

Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate

@article{ author = { J. E. Boschker and J. Momand and V. Bragaglia and R. N. Wang and K. Perumal and A. Giussani and B. J. Kooi and H. Riechert and R. Calarco }, title = { Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate }, journal = { Nano Letters }, volume = { 14 }, year = { 2014 }, pages = { 3534 } }

TY - JOUR AU - J. E. Boschker AU - J. Momand AU - V. Bragaglia AU - R. N. Wang AU - K. Perumal AU - A. Giussani AU - B. J. Kooi AU - H. Riechert AU - R. Calarco TI - Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate JF - Nano Letters JA - Nano Lett. J1 - VL - 14 SP - 3534 PY - 2014/05/08

Creation and physical aspects of luminescent patterns using helium ion microscopy

@article{ author = { V. Veligura and G. Hlawacek and U. Jahn and R. v. Gastel and H. J. W. Zandvliet and B. Poelsema }, title = { Creation and physical aspects of luminescent patterns using helium ion microscopy }, journal = { Journal of Applied Physics }, volume = { 115 }, year = { 2014 }, pages = { 183502 } }

TY - JOUR AU - V. Veligura AU - G. Hlawacek AU - U. Jahn AU - R. v. Gastel AU - H. J. W. Zandvliet AU - B. Poelsema TI - Creation and physical aspects of luminescent patterns using helium ion microscopy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 115 SP - 183502 PY - 2014/05/08

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

@article{ author = { M. Wu and E. Luna and J. Puustinen and M. Guina and A. Trampert }, title = { Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 205605 } }

TY - JOUR AU - M. Wu AU - E. Luna AU - J. Puustinen AU - M. Guina AU - A. Trampert TI - Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 205605 PY - 2014/04/30

Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires

@article{ author = { O. Brandt and S. Fernández-Garrido and J. K. Zettler and E. Luna and U. Jahn and C. Chèze and V. M. Kaganer }, title = { Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires }, journal = { Crystal Growth & Design }, volume = { 14 }, year = { 2014 }, pages = { 2246 } }

TY - JOUR AU - O. Brandt AU - S. Fernández-Garrido AU - J. K. Zettler AU - E. Luna AU - U. Jahn AU - C. Chèze AU - V. M. Kaganer TI - Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 14 SP - 2246 PY - 2014/04/23

Schottky contacts to In₂O₃

@article{ author = { H. von Wenckstern and D. Splith and F. Schmidt and M. Grundmann and O. Bierwagen and J. S. Speck }, title = { Schottky contacts to In₂O₃ }, journal = { APL Materials }, volume = { 2 }, year = { 2014 }, pages = { 046104 } }

TY - JOUR AU - H. von Wenckstern AU - D. Splith AU - F. Schmidt AU - M. Grundmann AU - O. Bierwagen AU - J. S. Speck TI - Schottky contacts to In₂O₃ JF - APL Materials JA - APL Mater. J1 - APLM VL - 2 SP - 046104 PY - 2014/04/04

Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

@article{ author = { K. Watanabe and T. Ohsawa and I. Sakaguchi and O. Bierwagen and M.E. White and M.Y. Tsai and R. Takahashi and E.M. Ross and Y. Adachi and J. S. Speck and H. Haneda and N. Ohashi }, title = { Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions }, journal = { Applied Physics Letters }, volume = { 104 }, year = { 2014 }, pages = { 132110 } }

TY - JOUR AU - K. Watanabe AU - T. Ohsawa AU - I. Sakaguchi AU - O. Bierwagen AU - M.E. White AU - M.Y. Tsai AU - R. Takahashi AU - E.M. Ross AU - Y. Adachi AU - J. S. Speck AU - H. Haneda AU - N. Ohashi TI - Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 104 SP - 132110 PY - 2014/04/03

Growth control of epitaxial GeTe–Sb2Te films using a line-of-sight quadrupole mass spectrometer

@article{ author = { K. Perumal and W. Braun and H. Riechert and R. Calarco }, title = { Growth control of epitaxial GeTe–Sb2Te films using a line-of-sight quadrupole mass spectrometer }, journal = { Journal of Crystal Growth }, volume = { 396 }, year = { 2014 }, pages = { 50 } }

TY - JOUR AU - K. Perumal AU - W. Braun AU - H. Riechert AU - R. Calarco TI - Growth control of epitaxial GeTe–Sb2Te films using a line-of-sight quadrupole mass spectrometer JF - Journal of Crystal Growth JA - J. Cryst. Growth J1 - JGC VL - 396 SP - 50 PY - 2014/04/02

Dynamics of indirect exciton transport by moving acoustic fields

@article{ author = { A. Violante and K. Cohen and S. Lazic and R. Hey and R. Rapaport and P. V. Santos }, title = { Dynamics of indirect exciton transport by moving acoustic fields }, journal = { New Journal Physics }, volume = { 16 }, year = { 2014 }, pages = { 033035 } }

TY - JOUR AU - A. Violante AU - K. Cohen AU - S. Lazic AU - R. Hey AU - R. Rapaport AU - P. V. Santos TI - Dynamics of indirect exciton transport by moving acoustic fields JF - New Journal Physics JA - New J. Phys. J1 - VL - 16 SP - 033035 PY - 2014/03/28

Generation of Dislocation Clusters by Glide m-planes in Semipolar GaN Layers

@article{ author = { N. Okada and A. Ishikawa and K. Yamane and K. Tadatomo and U. Jahn and H. T. Grahn }, title = { Generation of Dislocation Clusters by Glide m-planes in Semipolar GaN Layers }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 736 } }

TY - JOUR AU - N. Okada AU - A. Ishikawa AU - K. Yamane AU - K. Tadatomo AU - U. Jahn AU - H. T. Grahn TI - Generation of Dislocation Clusters by Glide m-planes in Semipolar GaN Layers JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 736 PY - 2014/03/26

Radiative and nonradiative decay of excitons in GaN nanowires

@article{ author = { C. Hauswald and T. Flissikowski and L. Geelhaar and H. T. Grahn and H. Riechert and O. Brandt }, title = { Radiative and nonradiative decay of excitons in GaN nanowires }, journal = { Proceedings of SPIE }, volume = { 8986 }, year = { 2014 }, pages = { 89860V } }

TY - JOUR AU - C. Hauswald AU - T. Flissikowski AU - L. Geelhaar AU - H. T. Grahn AU - H. Riechert AU - O. Brandt TI - Radiative and nonradiative decay of excitons in GaN nanowires JF - Proceedings of SPIE JA - Proc. SPIE J1 - VL - 8986 SP - 89860V PY - 2014/03/08

High-frequency acoustic charge transport in GaAs nanowires

@article{ author = { S. Büyükköse and A. Hernández-Mínguez and B. Vratzov and C. Somaschini and L. Geelhaar and H. Riechert and W. G. van der Wiel and P. V. Santos }, title = { High-frequency acoustic charge transport in GaAs nanowires }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 135204 } }

TY - JOUR AU - S. Büyükköse AU - A. Hernández-Mínguez AU - B. Vratzov AU - C. Somaschini AU - L. Geelhaar AU - H. Riechert AU - W. G. van der Wiel AU - P. V. Santos TI - High-frequency acoustic charge transport in GaAs nanowires JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 135204 PY - 2014/03/04

Experimental evidence for coherence resonance in a noise-driven GaAs/AlAs superlattice

@article{ author = { Y. Y. Huang and H. Qin and W. Li and S. L. Lu and J. R. Dong and H. T. Grahn and Y. H. Zhang }, title = { Experimental evidence for coherence resonance in a noise-driven GaAs/AlAs superlattice }, journal = { Europhysics Letters }, volume = { 105 }, year = { 2014 }, pages = { 47005 } }

TY - JOUR AU - Y. Y. Huang AU - H. Qin AU - W. Li AU - S. L. Lu AU - J. R. Dong AU - H. T. Grahn AU - Y. H. Zhang TI - Experimental evidence for coherence resonance in a noise-driven GaAs/AlAs superlattice JF - Europhysics Letters JA - Europhys. Lett. J1 - EPL VL - 105 SP - 47005 PY - 2014/03/03

Scalable interconnections for remote indirect exciton systems based on acoustic transport

@article{ author = { S. Lazic and A. Violante and K. Cohen and R. Hey and R. Rapaport and P. V. Santos }, title = { Scalable interconnections for remote indirect exciton systems based on acoustic transport }, journal = { Physical Review B: Solid State }, volume = { 89 }, year = { 2014 }, pages = { 085313 } }

TY - JOUR AU - S. Lazic AU - A. Violante AU - K. Cohen AU - R. Hey AU - R. Rapaport AU - P. V. Santos TI - Scalable interconnections for remote indirect exciton systems based on acoustic transport JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 89 SP - 085313 PY - 2014/02/26

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

@article{ author = { V. S. Kopp and V. M. Kaganer and M. V. Baidakova and W. V. Lundin and A. E. Nikolaev and E. V. Verkhovtceva and M. A. Yagovkina and N. Cherkashin }, title = { X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy }, journal = { Journal of Applied Physics }, volume = { 115 }, year = { 2014 }, pages = { 073507 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - M. V. Baidakova AU - W. V. Lundin AU - A. E. Nikolaev AU - E. V. Verkhovtceva AU - M. A. Yagovkina AU - N. Cherkashin TI - X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 115 SP - 073507 PY - 2014/02/19

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

@article{ author = { A. Hernández-Mínguez and K. Biermann and R. Hey and P. V. Santos }, title = { Spin transport and spin manipulation in GaAs (110) and (111) quantum wells }, journal = { Physica Status Solidi B }, volume = { 251 }, year = { 2014 }, pages = { 1736 } }

TY - JOUR AU - A. Hernández-Mínguez AU - K. Biermann AU - R. Hey AU - P. V. Santos TI - Spin transport and spin manipulation in GaAs (110) and (111) quantum wells JF - Physica Status Solidi B JA - Phys. Status Solidi B J1 - PSSB VL - 251 SP - 1736 PY - 2014/02/14

Multiple state transport deduced by weak antilocalization and electron-electron interaction effects in Sb_xTe_1-x layers

@article{ author = { Y. Takagaki and U. Jahn and A. Giussani and R. Calarco }, title = { Multiple state transport deduced by weak antilocalization and electron-electron interaction effects in Sb_xTe_1-x layers }, journal = { Journal of Physics: Condensed Matter }, volume = { 26 }, year = { 2014 }, pages = { 095802 } }

TY - JOUR AU - Y. Takagaki AU - U. Jahn AU - A. Giussani AU - R. Calarco TI - Multiple state transport deduced by weak antilocalization and electron-electron interaction effects in Sb_xTe_1-x layers JF - Journal of Physics: Condensed Matter JA - J. Phys.: Condens. Matter J1 - JPCM VL - 26 SP - 095802 PY - 2014/02/13

Excitation and detection of coherent optical phonon modes in epitaxial cubic Ge 2 Sb 2 Te 5 thin films of different crystallographic orientation

@article{ author = { R. Al-Saigh and A. Shalini and G.P. Srivastava and R.J. Hicken and R. Calarco }, title = { Excitation and detection of coherent optical phonon modes in epitaxial cubic Ge 2 Sb 2 Te 5 thin films of different crystallographic orientation }, journal = { Materials Research Society Bulletin }, volume = { 1661 }, year = { 2014 }, pages = { - } }

TY - JOUR AU - R. Al-Saigh AU - A. Shalini AU - G.P. Srivastava AU - R.J. Hicken AU - R. Calarco TI - Excitation and detection of coherent optical phonon modes in epitaxial cubic Ge 2 Sb 2 Te 5 thin films of different crystallographic orientation JF - Materials Research Society Bulletin JA - MRS Bulletin J1 - VL - 1661 SP - - PY - 2014/02/13

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

@article{ author = { M. Wienold and B. Röben and L. Schrottke and R. Sharma and A. Tahraoui and K. Biermann and H. T. Grahn }, title = { High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback }, journal = { Optics Express }, volume = { 22 }, year = { 2014 }, pages = { 3334 } }

TY - JOUR AU - M. Wienold AU - B. Röben AU - L. Schrottke AU - R. Sharma AU - A. Tahraoui AU - K. Biermann AU - H. T. Grahn TI - High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback JF - Optics Express JA - Opt. Express J1 - VL - 22 SP - 3334 PY - 2014/02/05

Uniaxial magnetic anisotropy in epitaxial a-Fe(h0l) films

@article{ author = { Y. Wang and F. Lv and O. Brandt and J. Herfort and C. X. Gao and D. S. Xue }, title = { Uniaxial magnetic anisotropy in epitaxial a-Fe(h0l) films }, journal = { Annalen der Physik }, volume = { 526 }, year = { 2014 }, pages = { L1 } }

TY - JOUR AU - Y. Wang AU - F. Lv AU - O. Brandt AU - J. Herfort AU - C. X. Gao AU - D. S. Xue TI - Uniaxial magnetic anisotropy in epitaxial a-Fe(h0l) films JF - Annalen der Physik JA - Ann. Phys. J1 - VL - 526 SP - L1 PY - 2014/02/05

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

@article{ author = { V. S. Kopp and V. M. Kaganer and B. Jenichen and O. Brandt }, title = { Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy }, journal = { Journal of Applied Crystallography }, volume = { 47 }, year = { 2014 }, pages = { 256 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt TI - Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 47 SP - 256 PY - 2014/01/30

Epitaxial growth of gold on Si(001)

@article{ author = { M. Wölz and Y.-L. Huang and M. Seibt and S. C. Erwin }, title = { Epitaxial growth of gold on Si(001) }, journal = { Surface Science }, volume = { 624 }, year = { 2014 }, pages = { 15 } }

TY - JOUR AU - M. Wölz AU - Y.-L. Huang AU - M. Seibt AU - S. C. Erwin TI - Epitaxial growth of gold on Si(001) JF - Surface Science JA - Surf. Sci. J1 - SuSc VL - 624 SP - 15 PY - 2014/01/29

Effects of Spin-Dependent Interactions on Polarization of Bright Polariton Solitons

@article{ author = { M. Sich and F. Fras and J. K. Chana and M. S. Skolnick and D. N. Krizhanovskii and A. V. Gorbach and R. Hartley and D. V. Skryabin and S. S. Gavrilov and E. A. Cerda-Méndez and K. Biermann and R. Hey and P. V. Santos }, title = { Effects of Spin-Dependent Interactions on Polarization of Bright Polariton Solitons }, journal = { Physical Review Letters }, volume = { 112 }, year = { 2014 }, pages = { 046403 } }

TY - JOUR AU - M. Sich AU - F. Fras AU - J. K. Chana AU - M. S. Skolnick AU - D. N. Krizhanovskii AU - A. V. Gorbach AU - R. Hartley AU - D. V. Skryabin AU - S. S. Gavrilov AU - E. A. Cerda-Méndez AU - K. Biermann AU - R. Hey AU - P. V. Santos TI - Effects of Spin-Dependent Interactions on Polarization of Bright Polariton Solitons JF - Physical Review Letters JA - Phys. Rev. Lett. J1 - PRL VL - 112 SP - 046403 PY - 2014/01/28

Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study

@article{ author = { P. Kusch and E. Grelich and C. Somaschini and E. Luna and M. Ramsteiner and L. Geelhaar and H. Riechert and S. Reich }, title = { Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study }, journal = { Physical Review B: Solid State }, volume = { 89 }, year = { 2014 }, pages = { 045310 } }

TY - JOUR AU - P. Kusch AU - E. Grelich AU - C. Somaschini AU - E. Luna AU - M. Ramsteiner AU - L. Geelhaar AU - H. Riechert AU - S. Reich TI - Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 89 SP - 045310 PY - 2014/01/27

Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry

@article{ author = { M. Feneberg and C. Lidig and K. Lange and M. E. White and M.-Y. Tsai and J. S. Speck and O. Bierwagen and R. Goldhahn }, title = { Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 82 } }

TY - JOUR AU - M. Feneberg AU - C. Lidig AU - K. Lange AU - M. E. White AU - M.-Y. Tsai AU - J. S. Speck AU - O. Bierwagen AU - R. Goldhahn TI - Anisotropy of the electron effective mass in rutile SnO₂ determined by infrared ellipsometry JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 82 PY - 2014/01/22

Effect of heavy Ga doping on defect structure of SnO₂ layers

@article{ author = { A. Mogilatenko and H. Kirmse and O. Bierwagen and M. Schmidbauer and M.-Y. Tsai and I. Häusler and M. E. White and J. S. Speck }, title = { Effect of heavy Ga doping on defect structure of SnO₂ layers }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 87 } }

TY - JOUR AU - A. Mogilatenko AU - H. Kirmse AU - O. Bierwagen AU - M. Schmidbauer AU - M.-Y. Tsai AU - I. Häusler AU - M. E. White AU - J. S. Speck TI - Effect of heavy Ga doping on defect structure of SnO₂ layers JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 87 PY - 2014/01/21

Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation

@article{ author = { O. Bierwagen and J. S. Speck }, title = { Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 48 } }

TY - JOUR AU - O. Bierwagen AU - J. S. Speck TI - Plasma-assisted molecular beam epitaxy of Sn-doped In₂O₃: Sn incorporation, structural changes, doping limits, and compensation JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 48 PY - 2014/01/20

Acoustic carrier transport in GaAs nanowires

@article{ author = { S. Lazic and R. Hey and P. V. Santos }, title = { Acoustic carrier transport in GaAs nanowires }, journal = { Length Scale Dependent Phonon Interactions; edited by S. L. Shinde and G. Srivastawa (Springer, New York, 2012) }, volume = { }, year = { 2014 }, pages = { 259 } }

TY - JOUR AU - S. Lazic AU - R. Hey AU - P. V. Santos TI - Acoustic carrier transport in GaAs nanowires JF - Length Scale Dependent Phonon Interactions; edited by S. L. Shinde and G. Srivastawa (Springer, New York, 2012) JA - Length Scale Dependent Phonon Interactions J1 - VL - SP - 259 PY - 2014/01/20

Epitaxial Fe_3Si/Ge/Fe_3Si thin film multilayers grown on GaAs(001)

@article{ author = { B. Jenichen and J. Herfort and U. Jahn and A. Trampert and H. Riechert }, title = { Epitaxial Fe_3Si/Ge/Fe_3Si thin film multilayers grown on GaAs(001) }, journal = { Thin Solid Films }, volume = { 556 }, year = { 2014 }, pages = { 120 } }

TY - JOUR AU - B. Jenichen AU - J. Herfort AU - U. Jahn AU - A. Trampert AU - H. Riechert TI - Epitaxial Fe_3Si/Ge/Fe_3Si thin film multilayers grown on GaAs(001) JF - Thin Solid Films JA - Thin Solid Films J1 - TSF VL - 556 SP - 120 PY - 2014/01/16

Preface: Emerging Oxide Semiconductors

@article{ author = { O. Bierwagen and S.F. Fischer }, title = { Preface: Emerging Oxide Semiconductors }, journal = { Physica Status Solidi A }, volume = { 211 }, year = { 2014 }, pages = { 19 } }

TY - JOUR AU - O. Bierwagen AU - S.F. Fischer TI - Preface: Emerging Oxide Semiconductors JF - Physica Status Solidi A JA - Phys. Status Solidi A J1 - PSSA VL - 211 SP - 19 PY - 2014/01/01