In this contribution we report on the controlled growth and structural characterization of epitaxial monolayer GNRs on SiC(0001) surfaces, which were prepared by utilizing the surface graphitization method at high temperatures. By controlling the time and temperature in the furnace, it is possible to vary the width of the monolayer GNRs. We studied the influence of growth temperature and SiC substrate miscut angle (or initial step height) on the GNR width, establishing a correlation between step heights and ribbon width. While a linear growth rate best describes the growth for lower step heights, a nonlinear rate is observed for substrates with higher steps, which is also associated with the formation of few-layer graphene on the step edges.
|1||Author||L. A. Galves , J. M. Wofford , G. V. Soares , U. Jahn , C. Pfüller , H. Riechert , J. M. J. Lopes|
The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons
|Source||Carbon , 115 , 162 ( 2017 )|
: 10.1016/j.carbon.2017.01.018 |