Dr. Vladimir Kaganer

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

@article{ author = { F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt }, title = { Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency }, journal = { Physical Review Applied }, volume = { 8 }, year = { 2017 }, pages = { 014032 } }

TY - JOUR AU - F. Feix AU - T. Flissikowski AU - K. K. Sabelfeld AU - V. M. Kaganer AU - M. Wölz AU - L. Geelhaar AU - H. T. Grahn AU - O. Brandt TI - Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 8 SP - 014032 PY - 2017/07/27

Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties

@article{ author = { O. Marquardt and T. Krause and V. M. Kaganer and J. Martin-Sanchez and M. Hanke and O. Brandt }, title = { Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties }, journal = { Nanotechnology }, volume = { 28 }, year = { 2017 }, pages = { 215204 } }

TY - JOUR AU - O. Marquardt AU - T. Krause AU - V. M. Kaganer AU - J. Martin-Sanchez AU - M. Hanke AU - O. Brandt TI - Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 28 SP - 215204 PY - 2017/05/04

Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study

@article{ author = { V. M. Kaganer and B. Jenichen and O. Brandt }, title = { Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study }, journal = { Physical Review Applied }, volume = { 6 }, year = { 2016 }, pages = { 064023 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt TI - Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study JF - Physical Review Applied JA - Phys. Rev. Appl. J1 - VL - 6 SP - 064023 PY - 2016/12/29

Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence

@article{ author = { V. M. Kaganer and S. Fernández-Garrido and P. Dogan and K. K. Sabelfeld and O. Brandt }, title = { Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence }, journal = { Nano Letters }, volume = { 16 }, year = { 2016 }, pages = { 3717 } }

TY - JOUR AU - V. M. Kaganer AU - S. Fernández-Garrido AU - P. Dogan AU - K. K. Sabelfeld AU - O. Brandt TI - Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence JF - Nano Letters JA - Nano Lett. J1 - VL - 16 SP - 3717 PY - 2016/06/08

Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures

@article{ author = { V. M. Kaganer and O. Marquardt and O. Brandt }, title = { Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures }, journal = { Nanotechnology }, volume = { 27 }, year = { 2016 }, pages = { 165201 } }

TY - JOUR AU - V. M. Kaganer AU - O. Marquardt AU - O. Brandt TI - Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 27 SP - 165201 PY - 2016/03/10

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

@article{ author = { V. M. Kaganer and B. Jenichen and M. Ramsteiner and U. Jahn and C. Hauswald and F. Grosse and S. Fernández-Garrido and O. Brandt }, title = { Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films }, journal = { Journal of Physics D: Applied Physics }, volume = { 48 }, year = { 2015 }, pages = { 385105 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - C. Hauswald AU - F. Grosse AU - S. Fernández-Garrido AU - O. Brandt TI - Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 48 SP - 385105 PY - 2015/09/02

Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations

@article{ author = { K. K. Sabelfeld and O. Brandt and V. M. Kaganer }, title = { Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations }, journal = { Journal of Mathematical Chemistry }, volume = { 53 }, year = { 2015 }, pages = { 651 } }

TY - JOUR AU - K. K. Sabelfeld AU - O. Brandt AU - V. M. Kaganer TI - Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations JF - Journal of Mathematical Chemistry JA - J. Math. Chem. J1 - VL - 53 SP - 651 PY - 2015/02/02

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and C. Hauswald and B. Jenichen and M. Ramsteiner and V. Consonni and L. Geelhaar and O. Brandt }, title = { Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 455702 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - C. Hauswald AU - B. Jenichen AU - M. Ramsteiner AU - V. Consonni AU - L. Geelhaar AU - O. Brandt TI - Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 455702 PY - 2014/10/20

Origin of the nonradiative decay of bound excitons in GaN nanowires

@article{ author = { C. Hauswald and P. Corfdir and J. K. Zettler and V. M. Kaganer and K. K. Sabelfeld and S. Fernández-Garrido and T. Flissikowski and V. Consonni and T. Gotschke and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Origin of the nonradiative decay of bound excitons in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165304 } }

TY - JOUR AU - C. Hauswald AU - P. Corfdir AU - J. K. Zettler AU - V. M. Kaganer AU - K. K. Sabelfeld AU - S. Fernández-Garrido AU - T. Flissikowski AU - V. Consonni AU - T. Gotschke AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Origin of the nonradiative decay of bound excitons in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 165304 PY - 2014/10/08

X-ray diffraction from hexagonal dislocation networks

@article{ author = { V. G. Kopp and V. M. Kaganer }, title = { X-ray diffraction from hexagonal dislocation networks }, journal = { Philosophical Magazine }, volume = { 94 }, year = { 2014 }, pages = { 3247 } }

TY - JOUR AU - V. G. Kopp AU - V. M. Kaganer TI - X-ray diffraction from hexagonal dislocation networks JF - Philosophical Magazine JA - Phil. Mag. J1 - VL - 94 SP - 3247 PY - 2014/09/09