Senior Scientist
phone: +49 30 20377 486
room: 0520
email: kaganer@pdi-berlin.de
Department: Microstructure
Core research areas: Nanoanalytics , III-V nanowires for optoelectronics
11 | Author | V. M. Kaganer , K. K. Sabelfeld , O. Brandt |
Title |
Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001} |
|
Source | Appl. Phys. Lett. , 112 , 122101 ( 2018 ) | |
DOI : 10.1063/1.5022170 | Download: PDF | Cite : Bibtex RIS |
12 | Author | D. van Treeck , G. Calabrese , J. Goertz , V. M. Kaganer , O. Brandt , S. Fernández-Garrido , L. Geelhaar |
Title |
Self-Assembled Formation of Long, Thin, and Uncoalesced GaN Nanowires on Crystalline TiN Films |
|
Source | Nano Res. , 11, Issue 1 , 565 ( 2018 ) | |
DOI : 10.1007/s12274-017-1717-x | Cite : Bibtex RIS |
13 | Author | O. Marquardt , V. M. Kaganer , P. Corfdir |
Title |
Chapter: Semiconductor nanowires, in: Handbook of optoelectronic device modeling and simulation |
|
Source | Taylor and Francis Books , I , 397 ( 2017 ) | |
DOI : ISBN-13: 978-1-4987-4946-6 | Cite : Bibtex RIS |
14 | Author | V. M. Kaganer , T. Ulyanenkova , A. Benediktovitch , M. myronov , A. Ulyanenkov |
Title |
Bunches of misfit dislocations on the onset of relaxation of Si_{0.4} Ge_{0.6} /Si(001) epitaxial films revealed by high-resolution x-ray diffraction |
|
Source | J. Appl. Phys. , 122 , 105302 ( 2017 ) | |
DOI : 10.1063/1.4990135 | Download: PDF | Cite : Bibtex RIS |
15 | Author | K. K. Sabelfeld , V. M. Kaganer , C. Pfüller , O. Brandt |
Title |
Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0001) |
|
Source | J. Phys. D: Appl. Phys. , 50 , 405101 ( 2017 ) | |
DOI : 10.1088/1361-6463/aa85c8 | Download arXiv: 1611.06895 | Cite : Bibtex RIS |
16 | Author | F. Feix , T. Flissikowski , K. K. Sabelfeld , V. M. Kaganer , M. Wölz , L. Geelhaar , H. T. Grahn , O. Brandt |
Title |
Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency |
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Source | Phys. Rev. Appl. , 8 , 014032 ( 2017 ) | |
DOI : 10.1103/PhysRevApplied.8.014032 | Download arXiv: 1703.06715 | Cite : Bibtex RIS |
17 | Author | O. Marquardt , T. Krause , V. M. Kaganer , J. Martin-Sanchez , M. Hanke , O. Brandt |
Title |
Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties |
|
Source | Nanotechnology , 28 , 215204 ( 2017 ) | |
DOI : 10.1088/1361-6528/aa6b73 | Download arXiv: 1608.07047 | Cite : Bibtex RIS |
18 | Author | V. M. Kaganer , B. Jenichen , O. Brandt |
Title |
Elastic vs. plastic strain relaxation in coalesced GaN nanowires: an x-ray diffraction study |
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Source | Phys. Rev. Appl. , 6 , 064023 ( 2016 ) | |
DOI : 10.1103/PhysRevApplied.6.064023 | Download arXiv: 1608.07420 | Cite : Bibtex RIS |
19 | Author | V. M. Kaganer , S. Fernández-Garrido , P. Dogan , K. K. Sabelfeld , O. Brandt |
Title |
Nucleation, growth and bundling of GaN nanowires in molecular beam epitaxy: Disentangling the origin of nanowire coalescence |
|
Source | Nano Lett. , 16 , 3717 ( 2016 ) | |
DOI : 10.1021/acs.nanolett.6b01044 | Cite : Bibtex RIS |
20 | Author | V. M. Kaganer , O. Marquardt , O. Brandt |
Title |
Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures |
|
Source | Nanotechnology , 27 , 165201 ( 2016 ) | |
DOI : 10.1088/0957-4484/27/16/165201 | Cite : Bibtex RIS |