Dr. Vladimir Kaganer

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

@article{ author = { V. M. Kaganer and B. Jenichen and M. Ramsteiner and U. Jahn and C. Hauswald and F. Grosse and S. Fernández-Garrido and O. Brandt }, title = { Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films }, journal = { Journal of Physics D: Applied Physics }, volume = { 48 }, year = { 2015 }, pages = { 385105 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - M. Ramsteiner AU - U. Jahn AU - C. Hauswald AU - F. Grosse AU - S. Fernández-Garrido AU - O. Brandt TI - Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films JF - Journal of Physics D: Applied Physics JA - J. Phys. D: Appl. Phys. J1 - JPD VL - 48 SP - 385105 PY - 2015/09/02

Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations

@article{ author = { K. K. Sabelfeld and O. Brandt and V. M. Kaganer }, title = { Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations }, journal = { Journal of Mathematical Chemistry }, volume = { 53 }, year = { 2015 }, pages = { 651 } }

TY - JOUR AU - K. K. Sabelfeld AU - O. Brandt AU - V. M. Kaganer TI - Stochastic model for the fluctuation-limited reaction-diffusion kinetics in inhomogeneous media based on the nonlinear Smoluchowski equations JF - Journal of Mathematical Chemistry JA - J. Math. Chem. J1 - VL - 53 SP - 651 PY - 2015/02/02

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and C. Hauswald and B. Jenichen and M. Ramsteiner and V. Consonni and L. Geelhaar and O. Brandt }, title = { Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence }, journal = { Nanotechnology }, volume = { 25 }, year = { 2014 }, pages = { 455702 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - C. Hauswald AU - B. Jenichen AU - M. Ramsteiner AU - V. Consonni AU - L. Geelhaar AU - O. Brandt TI - Correlation between the structural and optical properties of spontaneously formed GaN nanowires: A quantitative evaluation of the impact of nanowire coalescence JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 25 SP - 455702 PY - 2014/10/20

Origin of the nonradiative decay of bound excitons in GaN nanowires

@article{ author = { C. Hauswald and P. Corfdir and J. K. Zettler and V. M. Kaganer and K. K. Sabelfeld and S. Fernández-Garrido and T. Flissikowski and V. Consonni and T. Gotschke and H. T. Grahn and L. Geelhaar and O. Brandt }, title = { Origin of the nonradiative decay of bound excitons in GaN nanowires }, journal = { Physical Review B: Solid State }, volume = { 90 }, year = { 2014 }, pages = { 165304 } }

TY - JOUR AU - C. Hauswald AU - P. Corfdir AU - J. K. Zettler AU - V. M. Kaganer AU - K. K. Sabelfeld AU - S. Fernández-Garrido AU - T. Flissikowski AU - V. Consonni AU - T. Gotschke AU - H. T. Grahn AU - L. Geelhaar AU - O. Brandt TI - Origin of the nonradiative decay of bound excitons in GaN nanowires JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 90 SP - 165304 PY - 2014/10/08

X-ray diffraction from hexagonal dislocation networks

@article{ author = { V. G. Kopp and V. M. Kaganer }, title = { X-ray diffraction from hexagonal dislocation networks }, journal = { Philosophical Magazine }, volume = { 94 }, year = { 2014 }, pages = { 3247 } }

TY - JOUR AU - V. G. Kopp AU - V. M. Kaganer TI - X-ray diffraction from hexagonal dislocation networks JF - Philosophical Magazine JA - Phil. Mag. J1 - VL - 94 SP - 3247 PY - 2014/09/09

Strain distributions and diffraction peak profiles from crystals with dislocations

@article{ author = { V. M. Kaganer and K. K. Sabelfeld }, title = { Strain distributions and diffraction peak profiles from crystals with dislocations }, journal = { Acta Crystallographica A }, volume = { 70 }, year = { 2014 }, pages = { 457 } }

TY - JOUR AU - V. M. Kaganer AU - K. K. Sabelfeld TI - Strain distributions and diffraction peak profiles from crystals with dislocations JF - Acta Crystallographica A JA - Acta Cryst. A J1 - VL - 70 SP - 457 PY - 2014/09/01

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

@article{ author = { A. Proessdorf and M. Niehle and M. Hanke and F. Grosse and V. M. Kaganer and O. Bierwagen and A. Trampert }, title = { Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 021601 } }

TY - JOUR AU - A. Proessdorf AU - M. Niehle AU - M. Hanke AU - F. Grosse AU - V. M. Kaganer AU - O. Bierwagen AU - A. Trampert TI - Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 021601 PY - 2014/07/14

Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires

@article{ author = { O. Brandt and S. Fernández-Garrido and J. K. Zettler and E. Luna and U. Jahn and C. Chèze and V. M. Kaganer }, title = { Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires }, journal = { Crystal Growth & Design }, volume = { 14 }, year = { 2014 }, pages = { 2246 } }

TY - JOUR AU - O. Brandt AU - S. Fernández-Garrido AU - J. K. Zettler AU - E. Luna AU - U. Jahn AU - C. Chèze AU - V. M. Kaganer TI - Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 14 SP - 2246 PY - 2014/04/23

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

@article{ author = { V. S. Kopp and V. M. Kaganer and M. V. Baidakova and W. V. Lundin and A. E. Nikolaev and E. V. Verkhovtceva and M. A. Yagovkina and N. Cherkashin }, title = { X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy }, journal = { Journal of Applied Physics }, volume = { 115 }, year = { 2014 }, pages = { 073507 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - M. V. Baidakova AU - W. V. Lundin AU - A. E. Nikolaev AU - E. V. Verkhovtceva AU - M. A. Yagovkina AU - N. Cherkashin TI - X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 115 SP - 073507 PY - 2014/02/19

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

@article{ author = { V. S. Kopp and V. M. Kaganer and B. Jenichen and O. Brandt }, title = { Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy }, journal = { Journal of Applied Crystallography }, volume = { 47 }, year = { 2014 }, pages = { 256 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt TI - Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 47 SP - 256 PY - 2014/01/30