Dr. Vladimir Kaganer

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

@article{ author = { A. Proessdorf and M. Niehle and M. Hanke and F. Grosse and V. M. Kaganer and O. Bierwagen and A. Trampert }, title = { Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction }, journal = { Applied Physics Letters }, volume = { 105 }, year = { 2014 }, pages = { 021601 } }

TY - JOUR AU - A. Proessdorf AU - M. Niehle AU - M. Hanke AU - F. Grosse AU - V. M. Kaganer AU - O. Bierwagen AU - A. Trampert TI - Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 105 SP - 021601 PY - 2014/07/14

Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires

@article{ author = { O. Brandt and S. Fernández-Garrido and J. K. Zettler and E. Luna and U. Jahn and C. Chèze and V. M. Kaganer }, title = { Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires }, journal = { Crystal Growth & Design }, volume = { 14 }, year = { 2014 }, pages = { 2246 } }

TY - JOUR AU - O. Brandt AU - S. Fernández-Garrido AU - J. K. Zettler AU - E. Luna AU - U. Jahn AU - C. Chèze AU - V. M. Kaganer TI - Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires JF - Crystal Growth & Design JA - Cryst. Growth Des. J1 - VL - 14 SP - 2246 PY - 2014/04/23

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

@article{ author = { V. S. Kopp and V. M. Kaganer and M. V. Baidakova and W. V. Lundin and A. E. Nikolaev and E. V. Verkhovtceva and M. A. Yagovkina and N. Cherkashin }, title = { X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy }, journal = { Journal of Applied Physics }, volume = { 115 }, year = { 2014 }, pages = { 073507 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - M. V. Baidakova AU - W. V. Lundin AU - A. E. Nikolaev AU - E. V. Verkhovtceva AU - M. A. Yagovkina AU - N. Cherkashin TI - X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy JF - Journal of Applied Physics JA - J. Appl. Phys. J1 - JAP VL - 115 SP - 073507 PY - 2014/02/19

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

@article{ author = { V. S. Kopp and V. M. Kaganer and B. Jenichen and O. Brandt }, title = { Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy }, journal = { Journal of Applied Crystallography }, volume = { 47 }, year = { 2014 }, pages = { 256 } }

TY - JOUR AU - V. S. Kopp AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt TI - Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy JF - Journal of Applied Crystallography JA - J. Appl. Cryst. J1 - VL - 47 SP - 256 PY - 2014/01/30

Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder

@article{ author = { K. K. Sabelfeld and V. M. Kaganer and F. Limbach and P. Dogan and O. Brandt and L. Geelhaar and H. Riechert }, title = { Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder }, journal = { Applied Physics Letters }, volume = { 103 }, year = { 2013 }, pages = { 133105 } }

TY - JOUR AU - K. K. Sabelfeld AU - V. M. Kaganer AU - F. Limbach AU - P. Dogan AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder JF - Applied Physics Letters JA - Appl. Phys. Lett. J1 - APL VL - 103 SP - 133105 PY - 2013/01/01

Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy

@article{ author = { M. Wölz and M. Ramsteiner and V. M. Kaganer and O. Brandt and L. Geelhaar and H. Riechert }, title = { Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 4053 } }

TY - JOUR AU - M. Wölz AU - M. Ramsteiner AU - V. M. Kaganer AU - O. Brandt AU - L. Geelhaar AU - H. Riechert TI - Strain engineering of nanowire multi-quantum wells demonstrated by Raman spectroscopy JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 4053 PY - 2013/01/01

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

@article{ author = { S. Fernández-Garrido and V. M. Kaganer and K. K. Sabelfeld and T. Gotschke and J. Grandal and E. Calleja and L. Geelhaar and O. Brandt }, title = { Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy }, journal = { Nano Letters }, volume = { 13 }, year = { 2013 }, pages = { 3274 } }

TY - JOUR AU - S. Fernández-Garrido AU - V. M. Kaganer AU - K. K. Sabelfeld AU - T. Gotschke AU - J. Grandal AU - E. Calleja AU - L. Geelhaar AU - O. Brandt TI - Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy JF - Nano Letters JA - Nano Lett. J1 - VL - 13 SP - 3274 PY - 2013/01/01

Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures

@article{ author = { M. Wölz and J. Lähnemann and O. Brandt and V. M. Kaganer and M. Ramsteiner and C. Pfüller and C. Hauswald and C. N. Huang and L. Geelhaar and H. Riechert }, title = { Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures }, journal = { Nanotechnology }, volume = { 23 }, year = { 2012 }, pages = { 455203 } }

TY - JOUR AU - M. Wölz AU - J. Lähnemann AU - O. Brandt AU - V. M. Kaganer AU - M. Ramsteiner AU - C. Pfüller AU - C. Hauswald AU - C. N. Huang AU - L. Geelhaar AU - H. Riechert TI - Correlation between In content and emission wavelength of In_xGa_1-xN/GaN nanowire heterostructures JF - Nanotechnology JA - Nanotechnology J1 - NAN VL - 23 SP - 455203 PY - 2012/10/19

Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by in vivo x-ray diffraction

@article{ author = { M. Hanke and V. M. Kaganer and O. Bierwagen and M. Niehle and A. Trampert }, title = { Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction }, journal = { Nanoscale Research Letters }, volume = { 7 }, year = { 2012 }, pages = { 203 } }

TY - JOUR AU - M. Hanke AU - V. M. Kaganer AU - O. Bierwagen AU - M. Niehle AU - A. Trampert TI - Delayed crystallization of ultrathin Gd₂O₃ on Si(111) observed by <em>in vivo</em> x-ray diffraction JF - Nanoscale Research Letters JA - Nanoscale Res. Lett. J1 - VL - 7 SP - 203 PY - 2012/01/01

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

@article{ author = { V. M. Kaganer and B. Jenichen and O. Brandt and S. Fernández-Garrido and P. Dogan and L. Geelhaar and H. Riechert }, title = { Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles }, journal = { Physical Review B: Solid State }, volume = { 86 }, year = { 2012 }, pages = { 115325 } }

TY - JOUR AU - V. M. Kaganer AU - B. Jenichen AU - O. Brandt AU - S. Fernández-Garrido AU - P. Dogan AU - L. Geelhaar AU - H. Riechert TI - Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles JF - Physical Review B: Solid State JA - Phys. Rev. B J1 - VL - 86 SP - 115325 PY - 2012/01/01